Infineon Technologies - BP104S

  1. Home
  2. Infineon Technologies - BP104S
BP104S by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BP104S
Description PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Voltage: 20 V; Semiconductor Material: Silicon; Maximum Operating Temperature: 80 Cel;
Datasheet BP104S Datasheet
In Stock44,091
NAME DESCRIPTION
Maximum Dark Current: 30 nA
Optoelectronic Type: PIN PHOTODIODE
Maximum Response Time: .00000002 s
Maximum Operating Temperature: 80 Cel
Maximum Reverse Voltage: 20 V
Semiconductor Material: Silicon
Sub-Category: Photo Diodes
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
44,091 $0.344 $15,167.304

Popular Products

Category Top Products

MICROFC-60035-SMT-TR by Onsemi

MICROFC-60035-SMT-TR

Onsemi

MICROFC-60035-SMT-TR by Onsemi is a 6mm square avalanche photodiode with peak wavelength of 420nm. Operating temperature ranges from -40°C to 85°C, with reverse breakdown voltage of 24.2V and dark current up to 1750nA. Ideal for optoelectronic applications requiring surface mount configuration.
VEMD5510C by Vishay Intertechnology

VEMD5510C

Vishay Intertechnology

PIN PHOTODIODE;
MICROFC-10035-SMT by Onsemi

MICROFC-10035-SMT

Onsemi

MICROFC-10035-SMT by Onsemi is a 1mm avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has reverse breakdown voltage of 24.2V, and dark current of 49nA. Ideal for optoelectronic applications requiring high sensitivity in a compact surface mount configuration.
SFH2910FA by Infineon Technologies

SFH2910FA

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Reverse Voltage: 7 V; Infrared (IR) Range: YES; Maximum Response Time: .0000000015 s;
MRD510 by Motorola

MRD510

Motorola

MRD510 by Motorola is a single PIN photodiode with 4.735 mm size, ideal for optoelectronic applications. It operates b/w -55 to 125 °C and has a reverse breakdown voltage of 100 V. With a response time of 0.000000001 s, it offers precise light detection in various electronic devices.
QSD2030F by Onsemi

QSD2030F

Onsemi

The Onsemi QSD2030F is a 5mm PIN photodiode with peak wavelength of 880nm. It operates b/w -40 to 100°C, with reverse breakdown voltage of 50V. Ideal for IR applications, it has low dark current (10nA) and nominal light current (0.025mA).
MICROFR-10020-MLP-GP by Onsemi

MICROFR-10020-MLP-GP

Onsemi

MICROFR-10020-MLP-GP by Onsemi is a 1mm SQUARE AVALANCHE PHOTODIODE with peak wavelength of 635nm. It operates b/w -40 to 85 °C, has a reverse breakdown voltage of 24.25V, and dark current of 25nA. Ideal for surface mount applications in optoelectronics for high sensitivity light detection.
SFH2249 by Infineon Technologies

SFH2249

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 10 nA; JESD-609 Code: e0; Semiconductor Material: InGaAs;
BPV22NF by Temic Semiconductors

BPV22NF

Temic Semiconductors

PIN PHOTODIODE; Configuration: SINGLE; Additional Features: SIDE VIEW; Maximum Dark Current: 30 nA; No. of Functions: 1; Maximum Operating Temperature: 100 Cel;
BPW34FA by Siemens

BPW34FA

Siemens

PIN PHOTODIODE; Maximum Dark Current: 30 nA; Peak Wavelength (nm): 870; Nominal Light Current: .04 mA; No. of Functions: 1; Shape: RECTANGULAR;
124NLVT by Broadcom

124NLVT

Broadcom

Photo Diodes;
MICROFC-SMTPA-60035-GEVB-TR1 by Onsemi

MICROFC-SMTPA-60035-GEVB-TR1

Onsemi

AVALANCHE PHOTODIODE;
TPS704(F) by Toshiba

TPS704(F)

Toshiba

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Reverse Breakdown Voltage: 20 V; Additional Features: HIGH SENSITIVITY; Size: 7.6 mm; Nominal Light Current: .0009 mA;
NR8500FR-CB by Renesas Electronics

NR8500FR-CB

Renesas Electronics

Photo Diodes;
TPS708 by Toshiba

TPS708

Toshiba

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .0000001 s;
BPW34SR by Osram Opto Semiconductors

BPW34SR

Osram Opto Semiconductors

Osram Opto Semiconductors' BPW34SR is a single PIN photodiode with peak wavelength of 850nm. It operates b/w -40 to 100°C, with max response time of 0.00000002s. Ideal for IR applications, it has a square shape and surface mount feature.
HSDL-5400-OPTION-1S1 by Broadcom

HSDL-5400-OPTION-1S1

Broadcom

PIN PHOTODIODE; Terminal Finish: Tin (Sn); Configuration: SINGLE; Nominal Light Current: .0016 mA; JESD-609 Code: e3; Shape: ROUND;
BPW41N by Vishay Telefunken

BPW41N

Vishay Telefunken

PIN PHOTODIODE; Configuration: SINGLE; Minimum Reverse Breakdown Voltage: 60 V; Infrared (IR) Range: YES; Peak Wavelength (nm): 950; No. of Functions: 1;
SFH2701 by Osram Opto Semiconductors

SFH2701

Osram Opto Semiconductors

SFH2701 by Osram Opto Semiconductors is a single PIN photodiode with peak wavelength of 820 nm. It operates b/w -40 to 85°C, has max response time of 2 ns, and can handle up to 15V reverse voltage. Ideal for IR applications, it comes in a compact 1.85mm size for surface mounting.
KOM2084 by Infineon Technologies

KOM2084

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Minimum Reverse Breakdown Voltage: 32 V; Configuration: COMMON CATHODE, 4 ELEMENTS; Maximum Supply Voltage: .8 V; Minimum Operating Temperature: -40 Cel;