Infineon Technologies - SRD00534H

  1. Home
  2. Infineon Technologies - SRD00534H
SRD00534H by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number SRD00534H
Description AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: Germanium; Maximum Response Time: .0000000000003 s; Maximum Dark Current: 20 nA; Maximum Operating Temperature: 85 Cel;
Datasheet SRD00534H Datasheet
In Stock531
NAME DESCRIPTION
Maximum Dark Current: 20 nA
Optoelectronic Type: AVALANCHE PHOTODIODE
Maximum Response Time: .0000000000003 s
Maximum Operating Temperature: 85 Cel
Semiconductor Material: Germanium
Sub-Category: Photo Diodes
Minimum Operating Temperature: -40 Cel
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
531 - -

Popular Products

Category Top Products

MICROFR-10050-MLP-TR by Onsemi

MICROFR-10050-MLP-TR

Onsemi

MICROFR-10050-MLP-TR by Onsemi is a single avalanche photodiode with a peak wavelength of 635nm. It operates b/w -40 °C to 85°C, has a min reverse breakdown voltage of 24.25V, and max dark current of 146nA. Ideal for surface mount applications in optoelectronics.
BPW34FASR18R-Z by Osram Opto Semiconductors

BPW34FASR18R-Z

Osram Opto Semiconductors

Osram Opto Semiconductors' BPW34FASR18R-Z is a single PIN photodiode with peak wavelength of 880nm. It operates b/w -40 to 100°C, with min reverse breakdown voltage of 16V. Ideal for applications requiring infrared detection and nominal light current of 0.023mA.
ASDL-5771-D31 by Broadcom

ASDL-5771-D31

Broadcom

Photo Diodes; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;
SFH235FA by Infineon Technologies

SFH235FA

Infineon Technologies

SFH235FA by Infineon Technologies is a PIN photodiode with max response time of 0.00000002s and max reverse voltage of 32V. Operating temp ranges from -40°C to 80°C, making it ideal for optoelectronic applications requiring fast and precise light detection.
124NTCOQ52 by Broadcom

124NTCOQ52

Broadcom

Photo Diodes;
SFH235FA by Siemens

SFH235FA

Siemens

PIN PHOTODIODE; Shape: RECTANGULAR; Maximum Dark Current: 30 nA; Configuration: SINGLE; Peak Wavelength (nm): 870; Nominal Light Current: .04 mA;
PS7-5B-TO5 by First Sensor Ag

PS7-5B-TO5

First Sensor Ag

Photo Diodes;
MICROFC-SMTPA-30020-GEVB by Onsemi

MICROFC-SMTPA-30020-GEVB

Onsemi

AVALANCHE PHOTODIODE;
MICROFJ-60035-TSV-TR1 by Onsemi

MICROFJ-60035-TSV-TR1

Onsemi

MICROFJ-60035-TSV-TR1 by Onsemi is a 6.07mm square avalanche photodiode with a peak wavelength of 420nm. It operates b/w -40°C to 85°C, has a min reverse breakdown voltage of 24.2V, and a max dark current of 12000nA. Ideal for optoelectronic applications requiring high sensitivity and precision in detecting light signals.
SFH203 by Osram Opto Semiconductors

SFH203

Osram Opto Semiconductors

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 7 nA; Semiconductor Material: Silicon; JESD-609 Code: e0;
TEFD4300F by Vishay Intertechnology

TEFD4300F

Vishay Intertechnology

TEFD4300F by Vishay Intertechnology is a 3mm PIN photodiode with peak wavelength of 950nm. It operates b/w -40°C to 100°C, has min reverse breakdown voltage of 60V, and nominal light current of 0.027mA. Ideal for applications requiring infrared detection in compact configurations.
SFH213 by Siemens

SFH213

Siemens

PIN PHOTODIODE; Size: 4.95 mm; Shape: ROUND; No. of Functions: 1; Maximum Dark Current: 10 nA; Configuration: SINGLE;
SFH207 by Infineon Technologies

SFH207

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Semiconductor Material: Silicon; Maximum Reverse Voltage: 15 V; Maximum Operating Temperature: 80 Cel; Minimum Operating Temperature: -40 Cel;
MICROFC-SMTPA-30020-GEVB-PK by Onsemi

MICROFC-SMTPA-30020-GEVB-PK

Onsemi

AVALANCHE PHOTODIODE;
SDP8276-001 by Honeywell Sensing And Control

SDP8276-001

Honeywell Sensing And Control

Honeywell's SDP8276-001 photodiode has a max operating temp of 85°C and min of -40°C. With max dark current of 50nA and reverse voltage of 50V, it uses silicon semiconductor material for THROUGH HOLE MOUNT applications.
HR8102 by Renesas Electronics

HR8102

Renesas Electronics

PIN PHOTODIODE; Configuration: SINGLE; Additional Features: RESPONDS TO 600 TO 900 NANO METRE; Minimum Operating Temperature: -40 Cel; Minimum Reverse Breakdown Voltage: 100 V; No. of Functions: 1;
SFH235FA by Osram Opto Semiconductors

SFH235FA

Osram Opto Semiconductors

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Maximum Reverse Voltage: 32 V; Shape: RECTANGULAR; Semiconductor Material: Silicon;
TEMD5110X01 by Vishay Intertechnology

TEMD5110X01

Vishay Intertechnology

TEMD5110X01 by Vishay Intertechnology is a single configuration photodiode with a peak wavelength of 940 nm. It operates at temperatures ranging from -40 to 100 °C and has a min reverse breakdown voltage of 60 V. This rectangular-shaped PIN photodiode is suitable for applications requiring infrared detection in surface mount installations.
MICROFC-10035-SMT by Onsemi

MICROFC-10035-SMT

Onsemi

MICROFC-10035-SMT by Onsemi is a 1mm avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has reverse breakdown voltage of 24.2V, and dark current of 49nA. Ideal for optoelectronic applications requiring high sensitivity in a compact surface mount configuration.
BPW34FS by Osram Opto Semiconductors

BPW34FS

Osram Opto Semiconductors

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: PURE TIN OVER NICKEL; Maximum Response Time: .00000002 s; Semiconductor Material: Silicon; No. of Functions: 1;