Part | RoHS | Manufacturer | Optoelectronic Type | Mounting Feature | Terminal Finish | Configuration | Size | Maximum Dark Current | Maximum Supply Voltage | No. of Functions | Infrared (IR) Range | Peak Wavelength (nm) | Packing Method | Maximum Response Time | Sub-Category | Maximum Reverse Voltage | Semiconductor Material | Maximum Operating Temperature | Minimum Reverse Breakdown Voltage | Shape | Minimum Operating Temperature | Additional Features | Nominal Light Current | JESD-609 Code |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
Matte Tin (Sn) |
SINGLE |
30 nA |
1 |
YES |
940 |
TR, 7 INCH |
Photo Diodes |
60 V |
Silicon |
100 Cel |
60 V |
RECTANGULAR |
-40 Cel |
AEC-Q101, HIGH SENSITIVITY |
.05 mA |
e3 |
||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
3 mm |
30 nA |
1 |
YES |
900 |
BULK |
.00000035 s |
Photo Diodes |
32 V |
Silicon |
100 Cel |
60 V |
SQUARE |
-40 Cel |
HIGH SENSITIVITY |
.05 mA |
e3 |
||
Laser Components |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
3 mm |
30 nA |
1 |
YES |
900 |
BULK |
.00000035 s |
Photo Diodes |
32 V |
Silicon |
100 Cel |
60 V |
SQUARE |
-40 Cel |
HIGH SENSITIVITY |
.05 mA |
e3 |
|||
|
Vishay Intertechnology |
PIN PHOTODIODE |
Matte Tin (Sn) |
Photo Diodes |
e3 |
|||||||||||||||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
Matte Tin (Sn) |
Photo Diodes |
e3 |
|||||||||||||||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
3 mm |
30 nA |
1 |
YES |
900 |
Photo Diodes |
60 V |
Silicon |
100 Cel |
60 V |
SQUARE |
-40 Cel |
HIGH SENSITIVITY |
.05 mA |
e3 |
||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
Matte Tin (Sn) |
Photo Diodes |
e3 |
|||||||||||||||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
Matte Tin (Sn) |
Photo Diodes |
e3 |
|||||||||||||||||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
3 mm |
30 nA |
1 |
YES |
950 |
.000000125 s |
Photo Diodes |
20 V |
Silicon |
100 Cel |
60 V |
SQUARE |
-40 Cel |
DAY LIGHT FILTER |
.038 mA |
e3 |
|||
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
Matte Tin (Sn) |
SINGLE |
4.4 mm |
30 nA |
1 |
YES |
940 |
TR, 7 INCH |
Photo Diodes |
60 V |
Silicon |
100 Cel |
60 V |
RECTANGULAR |
-40 Cel |
HIGH SENSITIVITY |
.05 mA |
e3 |
|||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
7.5 mm |
30 nA |
1 |
YES |
950 |
.00000005 s |
Photo Diodes |
32 V |
Silicon |
100 Cel |
60 V |
SQUARE |
-40 Cel |
DAY LIGHT FILTER, HIGH SENSITIVITY, SIDE VIEW |
.045 mA |
e3 |
|||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
5 mm |
5 nA |
1 |
YES |
940 |
BULK |
.0000000025 s |
Photo Diodes |
60 V |
GaAs |
100 Cel |
60 V |
ROUND |
-40 Cel |
DAY LIGHT FILTER, HIGH SENSITIVITY |
.055 mA |
e3 |
||
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
Matte Tin (Sn) |
SINGLE |
2.4 mm |
30 nA |
1 |
YES |
950 |
Photo Diodes |
60 V |
Silicon |
100 Cel |
60 V |
SQUARE |
-40 Cel |
DAY LIGHT FILTER, HIGH SENSITIVITY |
.035 mA |
e3 |
||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
Matte Tin (Sn) |
SINGLE |
2.4 mm |
30 nA |
1 |
YES |
950 |
Photo Diodes |
60 V |
Silicon |
100 Cel |
60 V |
SQUARE |
-40 Cel |
DAY LIGHT FILTER, HIGH SENSITIVITY |
.035 mA |
e3 |
||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
Matte Tin (Sn) |
SINGLE |
4.4 mm |
30 nA |
1 |
NO |
540 |
Photo Diodes |
16 V |
Silicon |
100 Cel |
16 V |
RECTANGULAR |
-40 Cel |
HIGH SENSITIVITY |
.001 mA |
e3 |
||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
4.5 mm |
30 nA |
1 |
YES |
950 |
.00000007 s |
Photo Diodes |
60 V |
100 Cel |
60 V |
ROUND |
-55 Cel |
SIDE VIEW |
.06 mA |
e3 |
||||
|
Vishay Intertechnology |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
5.9 mm |
30 nA |
1 |
YES |
920 |
Photo Diodes |
10 V |
Silicon |
125 Cel |
10 V |
ROUND |
-40 Cel |
HIGH SENSITIVITY |
.06 mA |
e3 |
|||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
4.5 mm |
30 nA |
1 |
YES |
950 |
.0000001 s |
Photo Diodes |
Silicon |
100 Cel |
60 V |
ROUND |
-55 Cel |
SIDE VIEW |
.06 mA |
e3 |
||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
4 mm |
10 nA |
1 |
YES |
900 |
.000000007 s |
Photo Diodes |
Silicon |
125 Cel |
60 V |
ROUND |
-40 Cel |
HIGH SENSITIVITY |
.06 mA |
e3 |
||||
|
Vishay Intertechnology |
PIN PHOTODIODE |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
6.4 mm |
30 nA |
1 |
YES |
950 |
.00000005 s |
Photo Diodes |
32 V |
GaAs |
80 Cel |
60 V |
RECTANGULAR |
-30 Cel |
HIGH SENSITIVITY |
.038 mA |
e3 |
|||
|
Vishay Intertechnology |
PIN PHOTODIODE |
SURFACE MOUNT |
Matte Tin (Sn) |
SINGLE |
2.4 mm |
30 nA |
1 |
YES |
940 |
Photo Diodes |
60 V |
Silicon |
100 Cel |
60 V |
SQUARE |
-40 Cel |
HIGH SENSITIVITY |
.035 mA |
e3 |
||||
|
Broadcom |
Matte Tin (Sn) |
e3 |
|||||||||||||||||||||
|
Broadcom |
Matte Tin (Sn) |
e3 |
|||||||||||||||||||||
|
Broadcom |
Matte Tin (Sn) |
e3 |
|||||||||||||||||||||
|
Broadcom |
Matte Tin (Sn) |
e3 |
|||||||||||||||||||||
|
Broadcom |
Matte Tin (Sn) |
e3 |
|||||||||||||||||||||
|
Broadcom |
Matte Tin (Sn) |
e3 |
|||||||||||||||||||||
|
Broadcom |
Matte Tin (Sn) |
e3 |
|||||||||||||||||||||
|
Broadcom |
Matte Tin (Sn) |
e3 |
|||||||||||||||||||||
|
Broadcom |
Matte Tin (Sn) |
e3 |
|||||||||||||||||||||
|
Broadcom |
Matte Tin (Sn) |
e3 |
|||||||||||||||||||||
|
Broadcom |
PIN PHOTODIODE |
Matte Tin (Sn) |
SINGLE |
1.78 mm |
5 nA |
1 |
YES |
875 |
85 Cel |
40 V |
ROUND |
-40 Cel |
.0043 mA |
e3 |
A photodiode is a type of electronic component that uses light to generate an electric current. It is a semiconductor device that is designed to respond to the presence of light by producing a flow of electrons. Photodiodes are widely used in a variety of applications, including in cameras, optical communication systems, and medical equipment.
Photodiodes work by converting light energy into electrical energy. When light hits the photodiode, it creates an electric current that is proportional to the intensity of the light. This current can be measured and used to determine the presence, intensity, and wavelength of the light.
Photodiodes are available in different types, each with their own characteristics and applications. The most common types of photodiodes are PIN photodiodes, avalanche photodiodes, and Schottky photodiodes.
PIN photodiodes are widely used in optical communication systems and are designed for high-speed and low-noise applications. They have a wide spectral response range and are able to detect both visible and infrared light.
Avalanche photodiodes are used in applications that require high sensitivity and low noise, such as in low-light-level imaging and spectroscopy. They are able to generate high gain and high-speed signals, making them ideal for use in low-light-level applications.
Schottky photodiodes are used in applications that require high-speed and high-frequency response, such as in microwave and millimeter-wave detection. They have a low junction capacitance and are able to detect fast-changing signals.