Vishay Intertechnology - BPW41N

  1. Home
  2. Vishay Intertechnology - BPW41N
BPW41N by Vishay Intertechnology

Image shown is a representation only.

Manufacturer Vishay Intertechnology
Manufacturer's Part Number BPW41N
Description PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Nominal Light Current: .045 mA; JESD-609 Code: e3; Minimum Reverse Breakdown Voltage: 60 V;
Datasheet BPW41N Datasheet
In Stock6,380
NAME DESCRIPTION
Maximum Dark Current: 30 nA
Shape: SQUARE
Configuration: SINGLE
Size: 7.5 mm
Sub-Category: Photo Diodes
Minimum Reverse Breakdown Voltage: 60 V
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Mounting Feature: THROUGH HOLE MOUNT
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PIN PHOTODIODE
Nominal Light Current: .045 mA
Peak Wavelength (nm): 950
Additional Features: DAY LIGHT FILTER, HIGH SENSITIVITY, SIDE VIEW
Maximum Response Time: .00000005 s
Maximum Operating Temperature: 100 Cel
Maximum Reverse Voltage: 32 V
Semiconductor Material: Silicon
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
6,380 - -

Popular Products

Category Top Products

TEMD1030 by Vishay Intertechnology

TEMD1030

Vishay Intertechnology

Vishay Intertechnology's TEMD1030 is a single PIN photodiode with peak wavelength of 940nm. It operates b/w -40°C to 85°C, with max reverse voltage of 60V and dark current of 10nA. Ideal for IR applications, it features surface mounting and tin terminal finish.
SFH206F by Infineon Technologies

SFH206F

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .00000002 s; Minimum Operating Temperature: -55 Cel; Infrared (IR) Range: YES;
OP950 by Optek Technology

OP950

Optek Technology

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Additional Features: SIDE VIEW, RESPONDS FROM VISIBLE TO INFRARED RANGE; Semiconductor Material: Silicon; Maximum Reverse Voltage: 60 V; Configuration: SINGLE;
MICROFC-10035-SMT by Onsemi

MICROFC-10035-SMT

Onsemi

MICROFC-10035-SMT by Onsemi is a 1mm avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has reverse breakdown voltage of 24.2V, and dark current of 49nA. Ideal for optoelectronic applications requiring high sensitivity in a compact surface mount configuration.
MICROFR-10010-MLP-TA by Onsemi

MICROFR-10010-MLP-TA

Onsemi

MICROFR-10010-MLP-TA by Onsemi is a single avalanche photodiode with a peak wavelength of 635nm. It operates b/w -40 to 85 °C, has a min reverse breakdown voltage of 24.25V, and max dark current of 6nA. Ideal for surface mount applications in optoelectronics.
BPW41N by Telefunken Microelectronics

BPW41N

Telefunken Microelectronics

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .00000005 s; Minimum Operating Temperature: -30 Cel; Semiconductor Material: Silicon;
NR8800CS-BB-AZ by Renesas Electronics

NR8800CS-BB-AZ

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Semiconductor Material: InGaAs; Maximum Dark Current: 30 nA;
HSDL-54001S1 by Broadcom

HSDL-54001S1

Broadcom

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; No. of Functions: 1; Maximum Dark Current: 5 nA; Configuration: SINGLE; Maximum Reverse Voltage: 40 V;
SFH2030F by Infineon Technologies

SFH2030F

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); No. of Functions: 1; Shape: ROUND; Nominal Light Current: .03 mA;
BPW34S by Vishay Intertechnology

BPW34S

Vishay Intertechnology

Vishay Intertechnology's BPW34S is a single PIN photodiode with a 3mm square shape and peak wavelength of 900nm. It operates b/w -40°C to 100°C, with a min reverse breakdown voltage of 60V. Ideal for applications requiring infrared detection, it has a nominal light current of 0.05mA and max dark current of 30nA.
MICRORB-SMA-10010-GEVB-PK by Onsemi

MICRORB-SMA-10010-GEVB-PK

Onsemi

Photo Diodes;
AFBR-S4N44P163 by Broadcom

AFBR-S4N44P163

Broadcom

AVALANCHE PHOTODIODE;
NDL5407P1 by Renesas Electronics

NDL5407P1

Renesas Electronics

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Maximum Dark Current: 5 nA; Maximum Reverse Voltage: 20 V; Minimum Operating Temperature: -30 Cel;
NR8500FP-CC by Renesas Electronics

NR8500FP-CC

Renesas Electronics

Photo Diodes;
NDL5104P by Renesas Electronics

NDL5104P

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: -30 Cel; Maximum Response Time: .0000000008 s; Semiconductor Material: Germanium;
MICRORB-10020-MLP by Onsemi

MICRORB-10020-MLP

Onsemi

PIN PHOTODIODE;
NDL5102P by Renesas Electronics

NDL5102P

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000000008 s; Semiconductor Material: Germanium; Minimum Operating Temperature: -40 Cel; Maximum Reverse Voltage: 45 V;
BPX63 by Infineon Technologies

BPX63

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; Maximum Reverse Voltage: 7 V; JESD-609 Code: e0;
TEMD7000X01 by Vishay Intertechnology

TEMD7000X01

Vishay Intertechnology

The Vishay Intertechnology TEMD7000X01 is a 2mm PIN photodiode with peak wavelength of 900nm. It operates b/w -40°C to 100°C, with reverse breakdown voltage of 60V. Ideal for infrared applications, it has nominal light current of 0.003mA and max dark current of 3nA.
NR6300EZ by Renesas Electronics

NR6300EZ

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Semiconductor Material: InGaAs; Maximum Dark Current: 25 nA;