THROUGH HOLE MOUNT Phototransistors 321

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Part	Manufacturer	Optoelectronic Type	Mounting Feature	Terminal Finish	Configuration	Size	Maximum Dark Current	No. of Functions	Infrared (IR) Range	Peak Wavelength (nm)	Maximum Response Time	Sub-Category	Maximum Operating Temperature	Shape	Minimum Operating Temperature	Minimum Collector-emitter Breakdown Voltage	Maximum Power Dissipation	Additional Features	Nominal Light Current	JESD-609 Code	Maximum On State Current
SFH300FA4	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			900	.00001 s	Photo Transistors	100 Cel		-55 Cel		.2 W			e0	.05 A
SFH309-6	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			860	.000009 s	Photo Transistors	100 Cel		-55 Cel		.165 W			e0	.015 A
SFH325FA-3	Infineon Technologies	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	2.4 mm	200 nA	1	YES	900	.000007 s	Photo Transistors	100 Cel	ROUND	-40 Cel	35 V	.165 W		.65 mA		.015 A
SFH313-3	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			850		Photo Transistors	100 Cel		-55 Cel					e0	.05 A
SFH300FA2	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			900	.0000075 s	Photo Transistors	100 Cel		-55 Cel		.2 W			e0	.05 A
SFH303FA	Infineon Technologies	PHOTO TRANSISTOR	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	5 mm	50 nA	1	YES	870		Photo Transistors	100 Cel	ROUND	-40 Cel	35 V				e0	.05 A
SFH300-3	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			850	.00001 s	Photo Transistors	100 Cel		-55 Cel		.2 W			e0	.05 A
SFH350F	Infineon Technologies		THROUGH HOLE MOUNT							900	.000015 s	Photo Transistors	100 Cel		-55 Cel		.2 W				.05 A
BPX82	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA				.000008 s	Photo Transistors	85 Cel		-40 Cel					e0
SFH302-6	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			880	.00002 s	Photo Transistors	100 Cel		-55 Cel		.15 W			e0	.05 A
SFH314FA-3	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			870	.000012 s	Photo Transistors	100 Cel		-55 Cel					e0	.05 A
SFH303	Infineon Technologies	PHOTO TRANSISTOR	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	5 mm	50 nA	1	YES	850		Photo Transistors	100 Cel	ROUND	-40 Cel	35 V				e0	.05 A
SFH314	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			10 nA			850	.000012 s	Photo Transistors	100 Cel		-55 Cel		.2 W			e0	.05 A
SFH302	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			880		Photo Transistors	100 Cel		-55 Cel					e0	.05 A
BPX89C	Infineon Technologies	PHOTO DARLINGTON	THROUGH HOLE MOUNT				200 nA				.000008 s	Photo Transistors	80 Cel		-40 Cel
BPX83	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA				.000008 s	Photo Transistors	85 Cel		-40 Cel					e0
SFH305-2	Infineon Technologies		THROUGH HOLE MOUNT				20 nA			850	.0000055 s	Photo Transistors	85 Cel		-40 Cel		.075 W				.05 A
SFH309-4	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			860	.000007 s	Photo Transistors	100 Cel		-55 Cel		.165 W			e0	.015 A
SFH313-2	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			850		Photo Transistors	100 Cel		-55 Cel					e0	.05 A
BPY62-6	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			850	.000009 s	Photo Transistors	125 Cel		-55 Cel		.3 W			e0	.05 A
SFH309P2	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			860	.000005 s	Photo Transistors	100 Cel		-55 Cel		.165 W			e0	.015 A
SFH314FA	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			10 nA			870	.000012 s	Photo Transistors	100 Cel		-55 Cel		.2 W			e0	.05 A
SFH303F4	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			50 nA			900	.000015 s	Photo Transistors	100 Cel		-55 Cel		.2 W			e0	.05 A
SFH303-2	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			50 nA			850	.000011 s	Photo Transistors	100 Cel		-55 Cel		.2 W			e0	.05 A
SFH309PFA2	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			900	.000005 s	Photo Transistors	100 Cel		-55 Cel		.165 W			e0	.015 A
SFH317-4	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			2 nA			850	.000015 s	Photo Transistors	100 Cel		-55 Cel		.2 W			e0	.05 A
BPX87	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA				.000008 s	Photo Transistors	95 Cel		-40 Cel					e0
SFH309PFA3	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			900	.000006 s	Photo Transistors	100 Cel		-55 Cel		.165 W			e0	.015 A
BPY62	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			850		Photo Transistors	125 Cel		-55 Cel		.2 W			e0	.1 A
SFH325FA-4	Infineon Technologies	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	2.4 mm	200 nA	1	YES	900	.000008 s	Photo Transistors	100 Cel	ROUND	-40 Cel	35 V	.165 W		1 mA		.015 A
TPS601A	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	4.7 mm	200 nA	1	YES	800		Photo Transistors	125 Cel	ROUND	-40 Cel	40 V		HIGH SENSITIVITY	.1 mA
TPS610(F)	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	5 mm	100 nA	1	YES	800		Photo Transistors	75 Cel	ROUND	-20 Cel	30 V	.15 W	HIGH SENSITIVITY	.25 mA		.05 A
TPS615(C,F)	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	3.1 mm	100 nA	1	YES	800		Photo Transistors	85 Cel	ROUND	-30 Cel	30 V	.075 W		.06 mA		.02 A
TPS616(C,F)	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	3.1 mm	100 nA	1	YES	900		Photo Transistors	85 Cel	ROUND	-30 Cel	30 V	.075 W		.03 mA		.02 A
TPS611	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	5 mm	100 nA	1	YES	900		Photo Transistors	75 Cel	ROUND	-20 Cel	30 V		HIGH SENSITIVITY	.12 mA		.05 A
TPS607A	Toshiba	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	1.5 mm	250 nA	1	NO	720		Photo Transistors	75 Cel	ROUND	-25 Cel	30 V	.075 W	HIGH SENSITIVITY; SIDE VIEW	2 mA	e0	.05 A
TPS601A(C,F)	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	4.7 mm	200 nA	1	YES	800		Photo Transistors	125 Cel	ROUND	-40 Cel	40 V	.15 W	HIGH SENSITIVITY	.4 mA		.05 A
TPS615(BC,F)	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	3.1 mm	100 nA	1	YES	800		Photo Transistors	85 Cel	ROUND	-30 Cel	30 V	.075 W		.034 mA		.02 A
TPS626	Toshiba	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	1.5 mm	250 nA	1	YES	870		Photo Transistors	85 Cel	ROUND	-25 Cel	30 V	.075 W	HIGH SENSITIVITY; SIDE VIEW	1.4 mA	e0	.04 A
TPS610	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	5 mm	100 nA	1	YES	800		Photo Transistors	75 Cel	ROUND	-20 Cel	30 V		HIGH SENSITIVITY	.25 mA		.05 A
TPS621	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	1.5 mm	100 nA	1	YES	820		Photo Transistors	85 Cel	ROUND	-25 Cel	30 V	.075 W	SIDE VIEW	.1 mA	e0	.05 A
TPS622	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	1.5 mm	100 nA	1	YES	870		Photo Transistors	85 Cel	ROUND	-25 Cel	30 V	.075 W	SIDE VIEW	.07 mA		.05 A
TPS615(A,F)	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	3.1 mm	100 nA	1	YES	800		Photo Transistors	85 Cel	ROUND	-30 Cel	30 V	.075 W		.02 mA		.02 A
TPS601A(B,F)	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	4.7 mm	200 nA	1	YES	800		Photo Transistors	125 Cel	ROUND	-40 Cel	40 V	.15 W	HIGH SENSITIVITY	.2 mA		.05 A
TPS622(F)	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	1.5 mm	100 nA	1	YES	870		Photo Transistors	85 Cel	ROUND	-25 Cel	30 V	.075 W	SIDE VIEW	.07 mA		.05 A
TPS604(F)	Toshiba		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			800		Photo Transistors	125 Cel		-40 Cel		.15 W			e0	.05 A
TPS615(F)	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	3.1 mm	100 nA	1	YES	800		Photo Transistors	85 Cel	ROUND	-30 Cel	30 V	.075 W		.02 mA		.02 A
TPS614	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	4.7 mm	200 nA	1	YES	800		Photo Transistors	125 Cel	ROUND	-40 Cel	40 V		HIGH SENSITIVITY	1.5 mA	e0

Phototransistors

A phototransistor is an electronic component that uses light to control the flow of electrical current. It is a type of bipolar transistor that is designed to respond to the presence of light by amplifying the current flowing through it. Phototransistors are widely used in a variety of applications, including in optical communication systems, photodetectors, and motion detectors.

Phototransistors work by using light to generate a flow of electrons that controls the flow of current through the transistor. When light hits the phototransistor, it causes electrons to be released, which flow through the transistor and control the current flowing through it. The current flowing through the transistor can be amplified and used to control other components in a circuit.