Part | RoHS | Manufacturer | Optoelectronic Type | Mounting Feature | Terminal Finish | Configuration | Size | Maximum Dark Current | No. of Functions | Infrared (IR) Range | Peak Wavelength (nm) | Nominal Supply Voltage | Packing Method | Maximum Response Time | Sub-Category | Maximum Operating Temperature | Shape | Minimum Operating Temperature | Minimum Collector-emitter Breakdown Voltage | Maximum Power Dissipation | Additional Features | Nominal Light Current | JESD-609 Code | Maximum On State Current |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Intertechnology |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
1.8 mm |
200 nA |
1 |
YES |
825 |
.0000016 s |
Photo Transistors |
100 Cel |
ROUND |
32 V |
.1 W |
1 mA |
e3 |
.05 A |
|||||
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
900 |
.000007 s |
Photo Transistors |
100 Cel |
-55 Cel |
.165 W |
e0 |
.015 A |
|||||||||||||
|
Vishay Intertechnology |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
SINGLE |
3 mm |
50 nA |
1 |
NO |
570 |
BULK |
Photo Transistors |
85 Cel |
ROUND |
-40 Cel |
6 V |
.1 W |
HIGH SENSITIVITY |
.02 mA |
.02 A |
|||||
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
900 |
Photo Transistors |
100 Cel |
-55 Cel |
e0 |
.015 A |
|||||||||||||||
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
870 |
Photo Transistors |
100 Cel |
-40 Cel |
.1 W |
e0 |
.05 A |
|||||||||||||||
|
Onsemi |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
TIN |
SINGLE |
1.65 mm |
100 nA |
1 |
YES |
880 |
.000008 s |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
30 V |
.1 W |
HIGH SENSITIVITY, DAY LIGHT FILTER, SIDE LOOKER |
.25 mA |
e3 |
||||
|
Onsemi |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
TIN |
SINGLE |
1.65 mm |
100 nA |
1 |
YES |
880 |
.000008 s |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
30 V |
.1 W |
HIGH SENSITIVITY, DAY LIGHT FILTER, SIDE LOOKER |
1 mA |
e3 |
||||
|
Onsemi |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
TIN |
SINGLE |
1.65 mm |
100 nA |
1 |
YES |
880 |
.000008 s |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
30 V |
.1 W |
HIGH SENSITIVITY, DAY LIGHT FILTER, SIDE LOOKER |
.25 mA |
e3 |
||||
|
Vishay Intertechnology |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
TIN SILVER |
SINGLE |
100 nA |
1 |
YES |
920 |
Photo Transistors |
85 Cel |
RECTANGULAR |
-40 Cel |
70 V |
.1 W |
DAYLIGHT FILTER, SIDE VIEW |
2.5 mA |
e2 |
.05 A |
|||||
|
Tt Electronics Plc |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
SINGLE |
3.05 mm |
100 nA |
1 |
YES |
930 |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
30 V |
.1 W |
4.3 mA |
||||||||
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
100 nA |
870 |
Photo Transistors |
100 Cel |
-40 Cel |
e0 |
.05 A |
|||||||||||||||
|
Honeywell Sensing And Control |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
100 nA |
.000015 s |
Photo Transistors |
125 Cel |
-55 Cel |
.125 W |
|||||||||||||||
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
870 |
Photo Transistors |
100 Cel |
-55 Cel |
e0 |
.05 A |
|||||||||||||||
|
Vishay Intertechnology |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
5 mm |
50 nA |
1 |
YES |
850 |
.0000033 s |
Photo Transistors |
ROUND |
70 V |
HIGH SENSITIVITY |
10 mA |
e3 |
|||||||
|
Tt Electronics Plc |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
SINGLE |
1.58 mm |
100 nA |
1 |
YES |
930 |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
30 V |
.1 W |
SIDE VIEW |
2.55 mA |
|||||||
|
Vishay Intertechnology |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
3 mm |
100 nA |
1 |
YES |
920 |
Photo Transistors |
85 Cel |
ROUND |
-40 Cel |
70 V |
.15 W |
DAY LIGHT FILTER, SIDE VIEW |
4 mA |
e3 |
.1 A |
||||
|
Vishay Intertechnology |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
TIN SILVER |
SINGLE |
3 mm |
200 nA |
1 |
YES |
925 |
.0000023 s |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
70 V |
.185 W |
DAY LIGHT FILTER, HIGH SENSITIVITY |
3.2 mA |
e2 |
.05 A |
|||
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
900 |
.000009 s |
Photo Transistors |
100 Cel |
-55 Cel |
.165 W |
e0 |
.015 A |
|||||||||||||
|
Honeywell Sensing And Control |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
100 nA |
.00001 s |
Photo Transistors |
100 Cel |
-40 Cel |
.06 W |
|||||||||||||||
|
Honeywell Sensing And Control |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
100 nA |
.000015 s |
Photo Transistors |
125 Cel |
-55 Cel |
.15 W |
|||||||||||||||
|
Tt Electronics Plc |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
SINGLE |
1.58 mm |
100 nA |
1 |
YES |
930 |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
30 V |
.1 W |
SIDE VIEW |
.25 mA |
|||||||
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
.000008 s |
Photo Transistors |
85 Cel |
-40 Cel |
e0 |
||||||||||||||||
|
Onsemi |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
MATTE TIN |
SINGLE |
5 mm |
100 nA |
1 |
YES |
880 |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
30 V |
.1 W |
4 mA |
e3 |
||||||
|
Onsemi |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
MATTE TIN |
SINGLE |
5 mm |
100 nA |
1 |
YES |
880 |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
30 V |
.1 W |
6 mA |
e3 |
||||||
|
Honeywell Sensing And Control |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
100 nA |
.00001 s |
Photo Transistors |
100 Cel |
-40 Cel |
.06 W |
|||||||||||||||
|
Vishay Intertechnology |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
5.1 mm |
50 nA |
1 |
NO |
570 |
BULK |
Photo Transistors |
85 Cel |
ROUND |
-40 Cel |
6 V |
.1 W |
HIGH SENSITIVITY |
.075 mA |
e3 |
.02 A |
|||
|
Honeywell Sensing And Control |
THROUGH HOLE MOUNT |
100 nA |
.000015 s |
Photo Transistors |
125 Cel |
-55 Cel |
.075 W |
||||||||||||||||
|
Lite-on Technology |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
SINGLE |
3 mm |
100 nA |
1 |
YES |
TR |
.000005 s |
Photo Transistors |
85 Cel |
ROUND |
-40 Cel |
30 V |
.1 W |
HIGH SENSITIVITY |
4 mA |
||||||
|
Osram Opto Semiconductors |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
TIN |
SINGLE |
5 mm |
200 nA |
1 |
YES |
870 |
.000014 s |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
.2 W |
10 mA |
e3 |
.05 A |
|||||
|
Honeywell Sensing And Control |
PHOTO DARLINGTON |
THROUGH HOLE MOUNT |
250 nA |
.000015 s |
Photo Transistors |
125 Cel |
-55 Cel |
.15 W |
|||||||||||||||
|
Everlight Electronics |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
SINGLE |
5 mm |
100 nA |
1 |
YES |
940 |
Photo Transistors |
85 Cel |
ROUND |
-25 Cel |
30 V |
.075 W |
3.5 mA |
.02 A |
|||||||
|
Onsemi |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
MATTE TIN |
SINGLE |
5 mm |
100 nA |
1 |
YES |
880 |
.000008 s |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
30 V |
.1 W |
HIGH SENSITIVITY, DAY LIGHT FILTER |
4 mA |
e3 |
||||
|
Honeywell Sensing And Control |
THROUGH HOLE MOUNT |
100 nA |
850 |
Photo Transistors |
85 Cel |
-40 Cel |
.1 W |
||||||||||||||||
|
Vishay Intertechnology |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
TIN |
SINGLE |
5 mm |
50 nA |
1 |
NO |
570 |
Photo Transistors |
85 Cel |
ROUND |
-40 Cel |
6 V |
.1 W |
HIGH SENSITIVITY |
.35 mA |
e3 |
.02 A |
||||
|
Osram Opto Semiconductors |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
TIN |
SINGLE |
50 nA |
1 |
YES |
830 |
.000007 s |
Photo Transistors |
125 Cel |
ROUND |
-40 Cel |
.2 W |
5.8 mA |
e3 |
.1 A |
||||||
|
Fairchild Semiconductor |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
Matte Tin (Sn) |
SINGLE |
5 mm |
100 nA |
1 |
YES |
880 |
.000006 s |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
30 V |
.1 W |
HIGH SENSITIVITY, DAY LIGHT FILTER |
1 mA |
e3 |
||||
|
Onsemi |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
MATTE TIN |
SINGLE |
5 mm |
100 nA |
1 |
YES |
880 |
.00001 s |
Photo Transistors |
100 Cel |
ROUND |
-40 Cel |
30 V |
.1 W |
HIGH SENSITIVITY, DAY LIGHT FILTER |
6 mA |
e3 |
||||
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
100 nA |
850 |
.000009 s |
Photo Transistors |
125 Cel |
-55 Cel |
.3 W |
e0 |
.05 A |
|||||||||||||
|
Lite-on Technology |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
SINGLE |
3 mm |
100 nA |
1 |
YES |
TR |
.000005 s |
Photo Transistors |
85 Cel |
ROUND |
-40 Cel |
30 V |
.1 W |
HIGH SENSITIVITY |
2 mA |
||||||
|
Honeywell Sensing And Control |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
100 nA |
.00001 s |
Photo Transistors |
100 Cel |
-40 Cel |
.06 W |
|||||||||||||||
Kodenshi Auk |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
100 nA |
880 |
Photo Transistors |
85 Cel |
-25 Cel |
.075 W |
.02 A |
|||||||||||||||
Nte Electronics |
PHOTO DARLINGTON |
THROUGH HOLE MOUNT |
SINGLE |
1000 nA |
1 |
YES |
860 |
.00008 s |
Photo Transistors |
85 Cel |
ROUND |
-25 Cel |
35 V |
.075 W |
.05 A |
|||||||||
|
Honeywell Sensing And Control |
THROUGH HOLE MOUNT |
100 nA |
.000015 s |
Photo Transistors |
125 Cel |
-55 Cel |
.075 W |
||||||||||||||||
|
Honeywell Sensing And Control |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
100 nA |
.00001 s |
Photo Transistors |
100 Cel |
-40 Cel |
.06 W |
|||||||||||||||
Infineon Technologies |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
.000008 s |
Photo Transistors |
85 Cel |
-40 Cel |
e0 |
||||||||||||||||
|
Honeywell Sensing And Control |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
100 nA |
.000015 s |
Photo Transistors |
125 Cel |
-55 Cel |
.125 W |
|||||||||||||||
Telefunken Microelectronics |
THROUGH HOLE MOUNT |
Tin/Lead (Sn/Pb) |
200 nA |
780 |
.0000016 s |
Photo Transistors |
100 Cel |
-20 Cel |
.1 W |
e0 |
.1 A |
|||||||||||||
|
Osram Opto Semiconductors |
PHOTO TRANSISTOR |
THROUGH HOLE MOUNT |
Tin (Sn) |
SINGLE |
4.7 mm |
100 nA |
1 |
YES |
880 |
.000018 s |
Photo Transistors |
125 Cel |
ROUND |
-40 Cel |
.22 W |
15 mA |
e3 |
.05 A |
A phototransistor is an electronic component that uses light to control the flow of electrical current. It is a type of bipolar transistor that is designed to respond to the presence of light by amplifying the current flowing through it. Phototransistors are widely used in a variety of applications, including in optical communication systems, photodetectors, and motion detectors.
Phototransistors work by using light to generate a flow of electrons that controls the flow of current through the transistor. When light hits the phototransistor, it causes electrons to be released, which flow through the transistor and control the current flowing through it. The current flowing through the transistor can be amplified and used to control other components in a circuit.