Honeywell Sensing And Control - SD3443-003

  1. Home
  2. Honeywell Sensing And Control - SD3443-003
SD3443-003 by Honeywell Sensing And Control

Image shown is a representation only.

Manufacturer Honeywell Sensing And Control
Manufacturer's Part Number SD3443-003
Description PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .15 W; Maximum Response Time: .000015 s; Maximum Operating Temperature: 125 Cel;
Datasheet SD3443-003 Datasheet
NAME DESCRIPTION
Maximum Dark Current: 100 nA
Optoelectronic Type: PHOTO TRANSISTOR
Maximum Power Dissipation: .15 W
Maximum Response Time: .000015 s
Maximum Operating Temperature: 125 Cel
Sub-Category: Photo Transistors
Minimum Operating Temperature: -55 Cel
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

3037 by Nte Electronics

3037

Nte Electronics

The Nte Electronics 3037 is a single phototransistor with a size of 4.69 mm, ideal for light sensing applications. It has a nominal light current of 10 mA and max dark current of 200 nA, making it suitable for use in various optoelectronic circuits requiring precise light detection.
TPS615(BC,F) by Toshiba

TPS615(BC,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 800; Shape: ROUND; Maximum Operating Temperature: 85 Cel; No. of Functions: 1;
TIL626 by Texas Instruments

TIL626

Texas Instruments

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel;
PT481E00000F by Sharp Corporation

PT481E00000F

Sharp Corporation

Sharp Corporation's PT481E00000F is a 1.6mm PHOTO DARLINGTON phototransistor with peak wavelength of 800nm. It operates b/w -25°C to 85°C, has Tin/Silver/Copper terminal finish, and nominal light current of 10mA. Ideal for applications requiring IR detection with min collector-emitter breakdown voltage of 35V.
SFH320-3-Z by Osram Opto Semiconductors

SFH320-3-Z

Osram Opto Semiconductors

Osram Opto Semiconductors SFH320-3-Z is a single phototransistor with peak wavelength of 980nm. It operates b/w -40 to 100°C, dissipating max 0.165W power. Ideal for applications requiring IR detection, it has a collector-emitter breakdown voltage of 35V and max on state current of 0.015A.
KDT00030ATR by Onsemi

KDT00030ATR

Onsemi

KDT00030ATR by Onsemi is a phototransistor with peak wavelength of 630nm. It operates b/w -40°C to 85°C, with max dark current of 40nA. Ideal for surface mount applications in optoelectronics.
SFH313FA by Siemens

SFH313FA

Siemens

PHOTO TRANSISTOR; Additional Features: DAYLIGHT FILTER; Infrared (IR) Range: YES; Minimum Operating Temperature: -55 Cel; Size: 5 mm; No. of Functions: 1;
SFH300FA by Siemens

SFH300FA

Siemens

PHOTO TRANSISTOR; Size: 5 mm; Configuration: SINGLE; No. of Functions: 1; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -55 Cel;
BPW76B by Temic Semiconductors

BPW76B

Temic Semiconductors

PHOTO TRANSISTOR; Configuration: SINGLE; Size: 2.54 mm; No. of Functions: 1; Nominal Light Current: 1.2 mA; Minimum Collector-emitter Breakdown Voltage: 70 V;
2N5777 by Motorola

2N5777

Motorola

2N5777 by Motorola is a single phototransistor with peak wavelength of 800nm. It features PHOTO DARLINGTON optoelectronic type, Tin/Lead terminal finish, and 4mA nominal light current. Ideal for applications requiring IR detection with min collector-emitter breakdown voltage of 25V and low dark current of 100nA.
L14R1 by Renesas Electronics

L14R1

Renesas Electronics

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Maximum Power Dissipation: .15 W; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 100 Cel;
TPS612 by Toshiba

TPS612

Toshiba

PHOTO TRANSISTOR; Nominal Light Current: .014 mA; Minimum Operating Temperature: -20 Cel; Size: 3 mm; Maximum Dark Current: 100 nA; Minimum Collector-emitter Breakdown Voltage: 20 V;
QSB320F by Onsemi

QSB320F

Onsemi

The Onsemi QSB320F is a single phototransistor with peak wavelength of 880nm. It operates b/w -55 °C to 100°C, with max power dissipation of 0.165W. Ideal for IR applications due to its min collector-emitter breakdown voltage of 30V and surface mounting feature.
TIL58 by Texas Instruments

TIL58

Texas Instruments

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000002 s; Maximum Power Dissipation: .05 W; Maximum Dark Current: 25 nA;
TPS622(A,F) by Toshiba

TPS622(A,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Shape: ROUND; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Power Dissipation: .075 W; Peak Wavelength (nm): 870;
QSE122 by Onsemi

QSE122

Onsemi

QSE122 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, with max power dissipation of 0.1W. Ideal for applications requiring IR detection due to its fast response time and collector-emitter breakdown voltage of 30V.
TPS615 by Toshiba

TPS615

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .075 W; Nominal Light Current: .02 mA; Infrared (IR) Range: YES;
LPD80A by Infineon Technologies

LPD80A

Infineon Technologies

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 100 nA; Minimum Operating Temperature: -40 Cel; JESD-609 Code: e0;
OP600B by Optek Technology

OP600B

Optek Technology

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Size: 1.52 mm; Minimum Operating Temperature: -65 Cel; Nominal Light Current: .6 mA; Peak Wavelength (nm): 890;
TIL604 by Texas Instruments

TIL604

Texas Instruments

TIL604 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, has response time of 0.000008s, and collector-emitter breakdown voltage of 50V. Ideal for applications requiring infrared detection in through hole mounting configurations.