Infineon Technologies - SFH320-3/-4

  1. Home
  2. Infineon Technologies - SFH320-3/-4
SFH320-3/-4 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number SFH320-3/-4
Description Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Peak Wavelength (nm): 860; Maximum Response Time: .000008 s;
Datasheet SFH320-3/-4 Datasheet
In Stock30
NAME DESCRIPTION
Maximum Dark Current: 200 nA
Peak Wavelength (nm): 860
Maximum Power Dissipation: .165 W
Maximum Response Time: .000008 s
Maximum Operating Temperature: 100 Cel
Sub-Category: Photo Transistors
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
Maximum On State Current: .015 A
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
30 $0.163 $4.890

Popular Products

Category Top Products

SFH300-4 by Infineon Technologies

SFH300-4

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; Maximum Dark Current: 100 nA; JESD-609 Code: e0;
TPS606(LB)-C by Toshiba

TPS606(LB)-C

Toshiba

PHOTO TRANSISTOR; Size: 1.65 mm; Nominal Light Current: .02 mA; Minimum Operating Temperature: -25 Cel; Peak Wavelength (nm): 720; Shape: ROUND;
TIL58 by Texas Instruments

TIL58

Texas Instruments

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000002 s; Maximum Power Dissipation: .05 W; Maximum Dark Current: 25 nA;
TIL626 by Texas Instruments

TIL626

Texas Instruments

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel;
SFH314-2 by Infineon Technologies

SFH314-2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum Response Time: .00001 s; JESD-609 Code: e0;
SFH3400-2 by Infineon Technologies

SFH3400-2

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Peak Wavelength (nm): 850; Minimum Operating Temperature: -40 Cel;
QSE113 by Qt Optoelectronics

QSE113

Qt Optoelectronics

QSE113 by Qt Optoelectronics is a single configuration phototransistor with a size of 0.062 mm. It operates in temperatures ranging from -40 to 100 °C and has a max power dissipation of 0.1 W. It is commonly used in applications requiring infrared detection and has a fast response time of 0.000008 s.
QSC112 by Onsemi

QSC112

Onsemi

QSC112 by Onsemi is a 3mm single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, has max power dissipation of 0.1W, and response time of 0.000004s. Ideal for IR applications due to its infrared range, it features tin/lead terminal finish and through hole mounting.
QSD124 by Fairchild Semiconductor

QSD124

Fairchild Semiconductor

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Power Dissipation: .1 W; Shape: ROUND; JESD-609 Code: e3;
TIL132 by Texas Instruments

TIL132

Texas Instruments

TIL132 by Texas Instruments is a phototransistor with 9 separate elements, operating temperature range of -65 to 125°C. It has nominal light current of 2mA and max dark current of 100nA. Ideal for applications requiring IR detection with min collector-emitter breakdown voltage of 50V.
TPS613-B by Toshiba

TPS613-B

Toshiba

PHOTO TRANSISTOR; Nominal Light Current: .034 mA; Minimum Collector-emitter Breakdown Voltage: 20 V; Size: 3 mm; Maximum Operating Temperature: 75 Cel; Peak Wavelength (nm): 720;
TEMT1020 by Vishay Telefunken

TEMT1020

Vishay Telefunken

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Nominal Light Current: 7 mA; Maximum Dark Current: 200 nA; Maximum Response Time: .000002 s;
SPS289C by Onsemi

SPS289C

Onsemi

SPS289C by Onsemi is a PHOTO DARLINGTON phototransistor with peak wavelength of 850nm. It operates b/w -25 °C to 80°C, has max power dissipation of 0.05W, and response time of 0.00003s. Ideal for applications requiring through hole mounting and on-state current up to 0.03A.
SD3443-003 by Micro Switch

SD3443-003

Micro Switch

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .15 W; Maximum Response Time: .000015 s; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 125 Cel;
SD5410-002 by Micro Switch

SD5410-002

Micro Switch

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation: .15 W; Maximum Response Time: .000015 s; Maximum Dark Current: 250 nA;
BPW77NA by Vishay Telefunken

BPW77NA

Vishay Telefunken

PHOTO TRANSISTOR; Shape: ROUND; Infrared (IR) Range: YES; Peak Wavelength (nm): 850; Nominal Light Current: 10 mA; Additional Features: HIGH SENSITIVITY;
SPS189C by Onsemi

SPS189C

Onsemi

The Onsemi SPS189C is a phototransistor with peak wavelength of 880nm, max temp of 75 °C, and max power dissipation of 0.07W. Ideal for applications requiring through hole mounting, it has a max on state current of 0.02A and low dark current at 200nA.
SFH309-3 by Infineon Technologies

SFH309-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 200 nA;
TIL135 by Texas Instruments

TIL135

Texas Instruments

TIL135 by Texas Instruments is a phototransistor with 12 separate elements. It operates in temperatures from -65°C to 125°C, with nominal light current of 2mA and max dark current of 100nA. Ideal for applications requiring IR detection and a min collector-emitter breakdown voltage of 50V.
TPS612-AB by Toshiba

TPS612-AB

Toshiba

PHOTO TRANSISTOR; Peak Wavelength (nm): 870; Configuration: SINGLE; Infrared (IR) Range: YES; Minimum Collector-emitter Breakdown Voltage: 20 V; Size: 3 mm;