Vishay Intertechnology - VEMT2523SLX01

  1. Home
  2. Vishay Intertechnology - VEMT2523SLX01
VEMT2523SLX01 by Vishay Intertechnology

Image shown is a representation only.

Manufacturer Vishay Intertechnology
Manufacturer's Part Number VEMT2523SLX01
Description PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Infrared (IR) Range: YES; Nominal Light Current: 2.7 mA; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .1 W;
Datasheet VEMT2523SLX01 Datasheet
In Stock18,076
NAME DESCRIPTION
Other Names: VEMT2523SLX01-ND
VEMT2523SLX01TR
VEMT2523SLX01CT
VEMT2523SLX01DKR
Maximum Dark Current: 100 nA
Configuration: SINGLE
Packing Method: TR, 13 INCH
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
Maximum On State Current: .05 A
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PHOTO TRANSISTOR
Nominal Light Current: 2.7 mA
Peak Wavelength (nm): 850
Maximum Power Dissipation: .1 W
Additional Features: AEC-Q101
Maximum Operating Temperature: 100 Cel
Minimum Collector-emitter Breakdown Voltage: 20 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
18,076 - -

Popular Products

Category Top Products

QSD123A4R0 by Onsemi

QSD123A4R0

Onsemi

QSD123A4R0 by Onsemi is a 5mm round phototransistor with peak wavelength of 880nm. It operates b/w -40°C to 100°C, has max power dissipation of 0.1W, and collector-emitter breakdown voltage of 30V. Ideal for IR applications due to its optoelectronic type as a photo transistor.
SFH302-3 by Infineon Technologies

SFH302-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel;
PT100MF0MP by Sharp Corporation

PT100MF0MP

Sharp Corporation

PT100MF0MP by Sharp Corporation is a 1.6mm round phototransistor with a peak wavelength of 910nm. It operates in temperatures ranging from -30°C to 85°C and has a min collector-emitter breakdown voltage of 35V. This phototransistor is commonly used for optoelectronic applications requiring infrared detection.
SFH310FA by Infineon Technologies

SFH310FA

Infineon Technologies

Infineon's SFH310FA phototransistor operates b/w -55°C to 100°C, with peak wavelength of 880nm. It has a max power dissipation of 0.165W and on-state current of 0.05A. Ideal for applications requiring fast response time, such as light sensing in industrial automation and automotive systems.
PT91-21B/TR9 by Everlight Electronics

PT91-21B/TR9

Everlight Electronics

The Everlight Electronics PT91-21B/TR9 is a 1.9mm round phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, has a max power dissipation of 0.075W, and can handle an on-state current of 0.02A. Ideal for applications requiring infrared detection in compact spaces with surface mount requirements.
SFH320-3/-4 by Infineon Technologies

SFH320-3/-4

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Peak Wavelength (nm): 860; Maximum Response Time: .000008 s;
TPS616-B by Toshiba

TPS616-B

Toshiba

PHOTO TRANSISTOR; Minimum Operating Temperature: -30 Cel; Nominal Light Current: .017 mA; Shape: ROUND; Peak Wavelength (nm): 900; Maximum Operating Temperature: 85 Cel;
SDP8405-003 by Micro Switch

SDP8405-003

Micro Switch

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .07 W; Maximum Operating Temperature: 100 Cel; Maximum Response Time: .000015 s;
QSE113E3R0 by Fairchild Semiconductor

QSE113E3R0

Fairchild Semiconductor

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Power Dissipation: .1 W; Nominal Light Current: .25 mA; Infrared (IR) Range: YES;
TPS625(A) by Toshiba

TPS625(A)

Toshiba

PHOTO DARLINGTON; Nominal Light Current: .6 mA; No. of Functions: 1; Shape: ROUND; Configuration: SINGLE; Additional Features: HIGH SENSITIVITY; SIDE VIEW;
QSE113E3R0 by Onsemi

QSE113E3R0

Onsemi

QSE113E3R0 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, has response time of 0.000008s, and collector-emitter breakdown voltage of 30V. Ideal for optoelectronic applications requiring fast and precise light detection in compact spaces.
BPY62-5 by Infineon Technologies

BPY62-5

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 125 Cel; Peak Wavelength (nm): 850; Maximum Response Time: .000009 s;
QSE122 by Onsemi

QSE122

Onsemi

QSE122 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, with max power dissipation of 0.1W. Ideal for applications requiring IR detection due to its fast response time and collector-emitter breakdown voltage of 30V.
TPS613-C by Toshiba

TPS613-C

Toshiba

PHOTO TRANSISTOR; Size: 3 mm; Nominal Light Current: .06 mA; Configuration: SINGLE; Maximum Operating Temperature: 75 Cel; Maximum Dark Current: 100 nA;
TIL607 by Texas Instruments

TIL607

Texas Instruments

TIL607 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating max power of 0.05W. With response time of 0.000008s and dark current of 25nA, it's ideal for surface mount applications in various industries.
SD2440-004 by Honeywell Sensing And Control

SD2440-004

Honeywell Sensing And Control

SD2440-004 by Honeywell is a PHOTO TRANSISTOR with max operating temp of 125°C and min of -55°C. It has a max power dissipation of 0.125W, dark current of 100nA, and response time of 0.000015s. Ideal for optoelectronic applications requiring through hole mounting.
TIL67 by Texas Instruments

TIL67

Texas Instruments

TIL67 by Texas Instruments is a phototransistor with peak wavelength of 820nm. It operates b/w -40°C to 85°C, dissipating up to 0.05W power. With a response time of 0.000008s and dark current of 25nA, it's ideal for applications requiring precise light detection in various environments.
SD2440-002 by Micro Switch

SD2440-002

Micro Switch

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .125 W; Maximum Response Time: .000015 s;
SFH309PF4 by Infineon Technologies

SFH309PF4

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; JESD-609 Code: e0; Peak Wavelength (nm): 900;
SFH300FA by Infineon Technologies

SFH300FA

Infineon Technologies

SFH300FA by Infineon Technologies is a phototransistor with peak wavelength of 870nm, max operating temp of 100°C, and min operating temp of -40°C. It has a max on state current of 0.05A and terminal finish of Sn/Pb. Ideal for applications requiring precise light detection in environments with varying temperatures.