Osram Opto Semiconductors - SFH3219-Z

  1. Home
  2. Osram Opto Semiconductors - SFH3219-Z
SFH3219-Z by Osram Opto Semiconductors

Image shown is a representation only.

Manufacturer Osram Opto Semiconductors
Manufacturer's Part Number SFH3219-Z
Description PHOTO TRANSISTOR; Nominal Light Current: .063 mA; Shape: ROUND; Size: 2.575 mm; Maximum Operating Temperature: 100 Cel; Configuration: SINGLE;
Datasheet SFH3219-Z Datasheet
NAME DESCRIPTION
No. of Functions: 1
Infrared (IR) Range: YES
Maximum Dark Current: 50 nA
Optoelectronic Type: PHOTO TRANSISTOR
Shape: ROUND
Configuration: SINGLE
Size: 2.575 mm
Nominal Light Current: .063 mA
Peak Wavelength (nm): 990
Maximum Operating Temperature: 100 Cel
Minimum Operating Temperature: -40 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

OP550C by Optotek

OP550C

Optotek

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Peak Wavelength (nm): 930; No. of Functions: 1; Configuration: SINGLE;
SFH310FA-2 by Infineon Technologies

SFH310FA-2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Maximum Response Time: .000007 s; Minimum Operating Temperature: -55 Cel;
TPS621(B) by Toshiba

TPS621(B)

Toshiba

PHOTO TRANSISTOR; Nominal Light Current: .08 mA; Size: 1.5 mm; Minimum Collector-emitter Breakdown Voltage: 30 V; Minimum Operating Temperature: -25 Cel; Infrared (IR) Range: YES;
SFH300FA by Osram Opto Semiconductors

SFH300FA

Osram Opto Semiconductors

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Peak Wavelength (nm): 880; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 100 Cel;
TPS601A-B by Toshiba

TPS601A-B

Toshiba

PHOTO TRANSISTOR; No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 40 V; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 125 Cel; Additional Features: HIGH SENSITIVITY;
BPX84 by Siemens

BPX84

Siemens

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; No. of Functions: 4; Maximum Response Time: .000008 s;
TPS615(C,F) by Toshiba

TPS615(C,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; No. of Functions: 1; Infrared (IR) Range: YES; Peak Wavelength (nm): 800;
LS619 by Texas Instruments

LS619

Texas Instruments

The Texas Instruments LS619 is a single phototransistor with a round shape. It operates in temperatures ranging from -65°C to 125°C and has a max power dissipation of 0.05W. With nominal light current of 9mA, it is suitable for applications requiring fast response times in the infrared range.
OP520 by Optek Technology

OP520

Optek Technology

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Infrared (IR) Range: YES; Size: 2 mm; Minimum Collector-emitter Breakdown Voltage: 30 V; Shape: RECTANGULAR;
SFH3211FA-4 by Infineon Technologies

SFH3211FA-4

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Light Current: 1 mA; Maximum Dark Current: 200 nA; No. of Functions: 1;
TPS622(F) by Toshiba

TPS622(F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Size: 1.5 mm; Additional Features: SIDE VIEW; Maximum On State Current: .05 A;
TPS604 by Toshiba

TPS604

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); No. of Functions: 1; Shape: ROUND; Maximum Dark Current: 200 nA;
VTT9002H by Perkinelmer

VTT9002H

Perkinelmer

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .1 W; Maximum On State Current: .025 A; Maximum Operating Temperature: 70 Cel;
TEST2600 by Telefunken Microelectronics

TEST2600

Telefunken Microelectronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Maximum Dark Current: 100 nA; Peak Wavelength (nm): 920;
BPY62 by Infineon Technologies

BPY62

Infineon Technologies

Infineon's BPY62 phototransistor operates b/w -55°C to 125°C with peak wavelength of 850nm. It has a max power dissipation of 0.2W and can handle on-state current up to 0.1A. Ideal for applications requiring through-hole mounting, such as light sensing in industrial automation systems.
SPS189C by Onsemi

SPS189C

Onsemi

The Onsemi SPS189C is a phototransistor with peak wavelength of 880nm, max temp of 75 °C, and max power dissipation of 0.07W. Ideal for applications requiring through hole mounting, it has a max on state current of 0.02A and low dark current at 200nA.
TEFT4300 by Vishay Telefunken

TEFT4300

Vishay Telefunken

PHOTO TRANSISTOR; Terminal Finish: Tin/Silver (Sn/Ag); JESD-609 Code: e2; Additional Features: HIGH SENSITIVITY; Configuration: SINGLE; Peak Wavelength (nm): 925;
TPS615-AB by Toshiba

TPS615-AB

Toshiba

PHOTO TRANSISTOR; Minimum Operating Temperature: -30 Cel; Nominal Light Current: .02 mA; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Dark Current: 100 nA; Configuration: SINGLE;
TIL135 by Texas Instruments

TIL135

Texas Instruments

TIL135 by Texas Instruments is a phototransistor with 12 separate elements. It operates in temperatures from -65°C to 125°C, with nominal light current of 2mA and max dark current of 100nA. Ideal for applications requiring IR detection and a min collector-emitter breakdown voltage of 50V.
TPS621(A) by Toshiba

TPS621(A)

Toshiba

PHOTO TRANSISTOR; Additional Features: SIDE VIEW; No. of Functions: 1; Shape: ROUND; Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE;