Fairchild Semiconductor - QSB363

  1. Home
  2. Fairchild Semiconductor - QSB363
QSB363 by Fairchild Semiconductor

Image shown is a representation only.

Manufacturer Fairchild Semiconductor
Manufacturer's Part Number QSB363
Description PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Shape: ROUND; Additional Features: DAY LIGHT FILTER; JESD-609 Code: e3;
Datasheet QSB363 Datasheet
In Stock11,020
NAME DESCRIPTION
Maximum Dark Current: 100 nA
Shape: ROUND
Configuration: SINGLE
Size: 1.9 mm
Sub-Category: Photo Transistors
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
Minimum Operating Temperature: -25 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PHOTO TRANSISTOR
Nominal Light Current: 1.5 mA
Peak Wavelength (nm): 940
Maximum Power Dissipation: .1 W
Additional Features: DAY LIGHT FILTER
Maximum Operating Temperature: 85 Cel
Minimum Collector-emitter Breakdown Voltage: 30 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
11,020 - -

Popular Products

Category Top Products

TPS613-B by Toshiba

TPS613-B

Toshiba

PHOTO TRANSISTOR; Nominal Light Current: .034 mA; Minimum Collector-emitter Breakdown Voltage: 20 V; Size: 3 mm; Maximum Operating Temperature: 75 Cel; Peak Wavelength (nm): 720;
TPS612-A by Toshiba

TPS612-A

Toshiba

PHOTO TRANSISTOR; Maximum Operating Temperature: 75 Cel; Configuration: SINGLE; Nominal Light Current: .014 mA; Minimum Operating Temperature: -20 Cel; Minimum Collector-emitter Breakdown Voltage: 20 V;
SFH309P2 by Infineon Technologies

SFH309P2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000005 s; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -55 Cel;
SD2440-003 by Micro Switch

SD2440-003

Micro Switch

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .125 W;
SFH302-3 by Infineon Technologies

SFH302-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel;
TPS615(F) by Toshiba

TPS615(F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .075 W; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 85 Cel; Minimum Collector-emitter Breakdown Voltage: 30 V;
BPX38 by Infineon Technologies

BPX38

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Peak Wavelength (nm): 880; Maximum Operating Temperature: 125 Cel;
SFH3201-3 by Infineon Technologies

SFH3201-3

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 850; Maximum Power Dissipation: .12 W;
ASDL-6620-C22 by Broadcom

ASDL-6620-C22

Broadcom

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Size: 5 mm; Shape: ROUND;
BPY62-4 by Siemens

BPY62-4

Siemens

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Shape: ROUND; Peak Wavelength (nm): 850; Nominal Light Current: 7.2 mA;
TPS613-CD by Toshiba

TPS613-CD

Toshiba

PHOTO TRANSISTOR; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 720; Nominal Light Current: .06 mA; Maximum Operating Temperature: 75 Cel; Configuration: SINGLE;
QSC112 by Onsemi

QSC112

Onsemi

QSC112 by Onsemi is a 3mm single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, has max power dissipation of 0.1W, and response time of 0.000004s. Ideal for IR applications due to its infrared range, it features tin/lead terminal finish and through hole mounting.
SFH3201 by Infineon Technologies

SFH3201

Infineon Technologies

Infineon's SFH3201 phototransistor operates in -55 to 100°C range with peak wavelength of 860nm. It has max power dissipation of 0.165W and response time of 0.000005s. Ideal for surface mount applications, it can handle max on-state current of 0.015A.
SFH302 by Infineon Technologies

SFH302

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 880; Maximum On State Current: .05 A; Maximum Operating Temperature: 100 Cel;
SFH313FA-3 by Osram Opto Semiconductors

SFH313FA-3

Osram Opto Semiconductors

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 870; Maximum Operating Temperature: 100 Cel; Size: 5 mm; Minimum Collector-emitter Breakdown Voltage: 70 V;
TPS613-A by Toshiba

TPS613-A

Toshiba

PHOTO TRANSISTOR; No. of Functions: 1; Shape: ROUND; Peak Wavelength (nm): 720; Configuration: SINGLE; Infrared (IR) Range: NO;
PT42-21B/TR8 by Everlight Electronics

PT42-21B/TR8

Everlight Electronics

PT42-21B/TR8 by Everlight Electronics is a 1.8mm round phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W and on-state current of 0.02A. Ideal for IR applications, it has a min collector-emitter breakdown voltage of 30V and nominal light current of 3mA.
TIL610 by Texas Instruments

TIL610

Texas Instruments

TIL610 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating max power of 0.05W. With response time of 0.000008s and dark current of 25nA, it's ideal for through hole mounting in various applications.
TPS605(LB) by Toshiba

TPS605(LB)

Toshiba

PHOTO DARLINGTON; No. of Functions: 1; Maximum Dark Current: 250 nA; Size: 1.6 mm; Infrared (IR) Range: NO; Minimum Collector-emitter Breakdown Voltage: 30 V;
BPW76B by Vishay Intertechnology

BPW76B

Vishay Intertechnology

Vishay Intertechnology's BPW76B is a 3.9mm single phototransistor with peak wavelength of 850nm. Operating b/w -55°C to 125°C, it has a max power dissipation of 0.25W and response time of 3.5μs. Ideal for applications requiring IR detection, it features a collector-emitter breakdown voltage of 70V and on-state current up to 50mA in through-hole mounting setups.