Renesas Electronics - L14N2

  1. Home
  2. Renesas Electronics - L14N2
L14N2 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number L14N2
Description Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 150 Cel; Peak Wavelength (nm): 880; Maximum Response Time: .000014 s; Minimum Operating Temperature: -55 Cel;
Datasheet L14N2 Datasheet
In Stock313
NAME DESCRIPTION
Maximum Dark Current: 100 nA
Peak Wavelength (nm): 880
Maximum Power Dissipation: .6 W
Maximum Response Time: .000014 s
Maximum Operating Temperature: 150 Cel
Sub-Category: Photo Transistors
Minimum Operating Temperature: -55 Cel
Mounting Feature: THROUGH HOLE MOUNT
Maximum On State Current: .05 A
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
313 - -

Popular Products

Category Top Products

SD1440-002L by Honeywell Sensing And Control

SD1440-002L

Honeywell Sensing And Control

SD1440-002L by Honeywell is a phototransistor with max operating temp of 125°C and min of -55°C. It has a max power dissipation of 0.075W, dark current of 100nA, and response time of 0.000015s. Ideal for applications requiring through hole mounting such as light sensing in various electronic devices.
NTE3122 by Nte Electronics

NTE3122

Nte Electronics

NTE3122 by Nte Electronics is a PHOTO DARLINGTON phototransistor with peak wavelength of 860nm. It operates b/w -25°C to 85°C, has max power dissipation of 0.075W, and max response time of 0.00008s. Ideal for applications requiring IR detection due to its infrared range capability.
TEFT4300 by Vishay Telefunken

TEFT4300

Vishay Telefunken

PHOTO TRANSISTOR; Terminal Finish: Tin/Silver (Sn/Ag); JESD-609 Code: e2; Additional Features: HIGH SENSITIVITY; Configuration: SINGLE; Peak Wavelength (nm): 925;
TPS608A by Toshiba

TPS608A

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Nominal Light Current: .1 mA; Additional Features: SIDE VIEW; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 820;
1N5725 by Texas Instruments

1N5725

Texas Instruments

1N5725 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating max power of 0.05W. Ideal for applications requiring fast response time and IR range detection in a through hole mount configuration.
TPS606-D by Toshiba

TPS606-D

Toshiba

PHOTO TRANSISTOR; Shape: ROUND; Minimum Collector-emitter Breakdown Voltage: 20 V; Nominal Light Current: .04 mA; Additional Features: DOUBLE END; Configuration: SINGLE;
QSB363.ZR by Qt Optoelectronics

QSB363.ZR

Qt Optoelectronics

QSB363.ZR by Qt Optoelectronics is a 1.9mm ROUND PHOTO TRANSISTOR with max operating temp of 85°C and min of -40°C. It has 0.7mA light current, 100nA dark current, and 30V breakdown voltage. Ideal for applications requiring precise light sensing in compact spaces.
TIL415 by Texas Instruments

TIL415

Texas Instruments

TIL415 by Texas Instruments is a phototransistor with peak wavelength of 930nm. It operates b/w -40°C to 85°C, dissipating max power of 0.05W. With fast response time of 0.000025s and max on state current of 0.0001A, it's ideal for light sensing applications.
QSB320TR by Onsemi

QSB320TR

Onsemi

QSB320TR by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -55°C to 100°C, has a max power dissipation of 0.165W, and can handle a max on state current of 0.015A. Ideal for infrared applications in surface mount configurations.
QSD124 by Onsemi

QSD124

Onsemi

The Onsemi QSD124 is a 5mm single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, with max power dissipation of 0.1W. Ideal for applications requiring fast response time and IR range detection in through hole mounting setups.
BPX81 by Infineon Technologies

BPX81

Infineon Technologies

BPX81 by Infineon Technologies is an 850nm phototransistor with a max operating temperature of 80°C and a min operating temperature of -40°C. It has a max power dissipation of 0.09W and a max dark current of 200nA. This phototransistor is commonly used in applications requiring through hole mounting and can handle a max on-state current of 0.05A.
TIL406 by Texas Instruments

TIL406

Texas Instruments

TIL406 by Texas Instruments is a phototransistor with max temp of 125°C and min temp of -60°C. It has a max power dissipation of 0.05W, dark current of 25nA, and response time of 8µs. Ideal for applications requiring through hole mounting in various light sensing systems.
TIL626 by Texas Instruments

TIL626

Texas Instruments

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel;
KDT00030 by Onsemi

KDT00030

Onsemi

The Onsemi KDT00030 is a single phototransistor with peak wavelength of 630nm. It operates b/w -40 °C to 85°C, with nominal light current of 0.01mA and max dark current of 100nA. Ideal for applications requiring rectangular shape optoelectronic components in compact size.
QSD123 by Onsemi

QSD123

Onsemi

The Onsemi QSD123 is a 5mm single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, with max power dissipation of 0.1W. Ideal for applications requiring fast response time and IR detection in through-hole mounting setups.
SFH313FA-4 by Infineon Technologies

SFH313FA-4

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum On State Current: .05 A; Maximum Power Dissipation: .2 W;
PT481E00000F by Sharp Corporation

PT481E00000F

Sharp Corporation

Sharp Corporation's PT481E00000F is a 1.6mm PHOTO DARLINGTON phototransistor with peak wavelength of 800nm. It operates b/w -25°C to 85°C, has Tin/Silver/Copper terminal finish, and nominal light current of 10mA. Ideal for applications requiring IR detection with min collector-emitter breakdown voltage of 35V.
TEFT4300 by Telefunken Microelectronics

TEFT4300

Telefunken Microelectronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; JESD-609 Code: e0; Maximum Power Dissipation: .185 W;
BPY62-4 by Siemens

BPY62-4

Siemens

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Shape: ROUND; Peak Wavelength (nm): 850; Nominal Light Current: 7.2 mA;
SFH302-2 by Infineon Technologies

SFH302-2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; JESD-609 Code: e0; Maximum Dark Current: 200 nA;