Everlight Electronics - ALS-PT19-315C/L177/TR8

  1. Home
  2. Everlight Electronics - ALS-PT19-315C/L177/TR8
ALS-PT19-315C/L177/TR8 by Everlight Electronics

Image shown is a representation only.

Manufacturer Everlight Electronics
Manufacturer's Part Number ALS-PT19-315C/L177/TR8
Description PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 85 Cel; Infrared (IR) Range: NO; No. of Functions: 1; Size: 1.2 mm;
Datasheet ALS-PT19-315C/L177/TR8 Datasheet
NAME DESCRIPTION
Other Names: 3819310050
1080-1244-1
ALSPT19315C/L177/TR8
1080-1244-2
1080-1244-6
Maximum Dark Current: 100 nA
Nominal Supply Voltage: 5 V
Shape: RECTANGULAR
Configuration: SINGLE
Size: 1.2 mm
Sub-Category: Photo ICs
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Infrared (IR) Range: NO
Optoelectronic Type: PHOTO TRANSISTOR
Nominal Light Current: 1.52 mA
Peak Wavelength (nm): 630
Maximum Operating Temperature: 85 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

KDT00030ATR by Fairchild Semiconductor

KDT00030ATR

Fairchild Semiconductor

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Peak Wavelength (nm): 630; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3;
SFH3201-3 by Infineon Technologies

SFH3201-3

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 850; Maximum Power Dissipation: .12 W;
QSE113 by Onsemi

QSE113

Onsemi

QSE113 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, with max power dissipation of 0.1W. Ideal for IR applications due to its fast response time and collector-emitter breakdown voltage of 30V.
TPS612-B by Toshiba

TPS612-B

Toshiba

PHOTO TRANSISTOR; Shape: ROUND; Peak Wavelength (nm): 870; Minimum Operating Temperature: -20 Cel; Nominal Light Current: .024 mA; Maximum Dark Current: 100 nA;
SFH300FA by Infineon Technologies

SFH300FA

Infineon Technologies

SFH300FA by Infineon Technologies is a phototransistor with peak wavelength of 870nm, max operating temp of 100°C, and min operating temp of -40°C. It has a max on state current of 0.05A and terminal finish of Sn/Pb. Ideal for applications requiring precise light detection in environments with varying temperatures.
BPX43-6 by Infineon Technologies

BPX43-6

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 125 Cel; Maximum Response Time: .000022 s;
TPS611(F) by Toshiba

TPS611(F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Additional Features: HIGH SENSITIVITY; Shape: ROUND; Maximum Power Dissipation: .15 W; Infrared (IR) Range: YES;
LPD80A by Infineon Technologies

LPD80A

Infineon Technologies

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 100 nA; Minimum Operating Temperature: -40 Cel; JESD-609 Code: e0;
SFH320 by Infineon Technologies

SFH320

Infineon Technologies

SFH320 by Infineon Technologies is a single phototransistor with peak wavelength of 860nm. It operates b/w -40 to 100°C, has a max power dissipation of 0.165W, and can handle an on-state current of 0.015A. Ideal for applications requiring infrared detection in compact spaces due to its small size of 2.4mm and surface mount feature.
SFH325FA-3 by Infineon Technologies

SFH325FA-3

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .165 W; Maximum Dark Current: 200 nA; Configuration: SINGLE; Maximum On State Current: .015 A;
SD5410-002 by Honeywell Sensing And Control

SD5410-002

Honeywell Sensing And Control

SD5410-002 by Honeywell Sensing And Control is a PHOTO DARLINGTON phototransistor with a max operating temperature of 125°C and a min operating temperature of -55°C. It has a max power dissipation of 0.15W and a max dark current of 250nA. This through-hole mount component is commonly used in optoelectronic applications.
TPS601A-A by Toshiba

TPS601A-A

Toshiba

PHOTO TRANSISTOR; Configuration: SINGLE; Size: 4.7 mm; Shape: ROUND; Minimum Operating Temperature: -40 Cel; Infrared (IR) Range: YES;
TPS606-D by Toshiba

TPS606-D

Toshiba

PHOTO TRANSISTOR; Shape: ROUND; Minimum Collector-emitter Breakdown Voltage: 20 V; Nominal Light Current: .04 mA; Additional Features: DOUBLE END; Configuration: SINGLE;
TPS612-A by Toshiba

TPS612-A

Toshiba

PHOTO TRANSISTOR; Maximum Operating Temperature: 75 Cel; Configuration: SINGLE; Nominal Light Current: .014 mA; Minimum Operating Temperature: -20 Cel; Minimum Collector-emitter Breakdown Voltage: 20 V;
SFH314FA-3 by Infineon Technologies

SFH314FA-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel; Peak Wavelength (nm): 870;
SD1440-003L by Micro Switch

SD1440-003L

Micro Switch

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 100 nA; Maximum Response Time: .000015 s; Minimum Operating Temperature: -55 Cel;
SFH309FA by Osram Opto Semiconductors

SFH309FA

Osram Opto Semiconductors

PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Terminal Finish: BRIGHT TIN OVER NICKEL; Nominal Light Current: .4 mA; Maximum Power Dissipation: .165 W; JESD-609 Code: e3;
TPS613 by Toshiba

TPS613

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Infrared (IR) Range: NO; No. of Functions: 1; Maximum Operating Temperature: 75 Cel; Size: 3 mm;
TPS614 by Toshiba

TPS614

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 40 V; Peak Wavelength (nm): 800;
SFH325-Z by Osram Opto Semiconductors

SFH325-Z

Osram Opto Semiconductors

The Osram Opto Semiconductors SFH325-Z is a single phototransistor with a peak wavelength of 980nm. It operates b/w -40°C to 100°C, has a min collector-emitter breakdown voltage of 35V, and features an optoelectronic type of PHOTO TRANSISTOR. Ideal for applications requiring infrared detection and light current up to 0.016mA.