Everlight Electronics - ALS-PT19-315C/L177/TR8

  1. Home
  2. Everlight Electronics - ALS-PT19-315C/L177/TR8
ALS-PT19-315C/L177/TR8 by Everlight Electronics

Image shown is a representation only.

Manufacturer Everlight Electronics
Manufacturer's Part Number ALS-PT19-315C/L177/TR8
Description PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 85 Cel; Infrared (IR) Range: NO; No. of Functions: 1; Size: 1.2 mm;
Datasheet ALS-PT19-315C/L177/TR8 Datasheet
NAME DESCRIPTION
Maximum Dark Current: 100 nA
Nominal Supply Voltage: 5 V
Shape: RECTANGULAR
Configuration: SINGLE
Size: 1.2 mm
Sub-Category: Photo ICs
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Infrared (IR) Range: NO
Optoelectronic Type: PHOTO TRANSISTOR
Nominal Light Current: 1.52 mA
Peak Wavelength (nm): 630
Maximum Operating Temperature: 85 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

QSE114 by Qt Optoelectronics

QSE114

Qt Optoelectronics

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 30 V; Size: .062 mm; Maximum Power Dissipation: .1 W;
TPS616(F) by Toshiba

TPS616(F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Configuration: SINGLE; Infrared (IR) Range: YES; Minimum Operating Temperature: -30 Cel; Size: 3.1 mm;
PH5503A2NA1-Y-A by Renesas Electronics

PH5503A2NA1-Y-A

Renesas Electronics

Photo Transistors;
BPT-BP1A34 by Yellow Stone

BPT-BP1A34

Yellow Stone

PHOTO TRANSISTOR; Maximum Dark Current: 100 nA; Shape: ROUND; Infrared (IR) Range: YES; Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE;
SD2440-003 by Micro Switch

SD2440-003

Micro Switch

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .125 W;
1N4378 by Texas Instruments

1N4378

Texas Instruments

1N4378 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. With response time of 0.000002s, it's ideal for applications requiring precise light detection in various environments.
VEMT2520X01 by Vishay Intertechnology

VEMT2520X01

Vishay Intertechnology

Vishay Intertechnology's VEMT2520X01 is a 1.8mm phototransistor with peak wavelength of 850nm. Operating b/w -40°C to 100°C, it has a max power dissipation of 0.1W and nominal light current of 6mA. Ideal for applications requiring IR detection in compact setups using surface mount technology.
TPS612-AB by Toshiba

TPS612-AB

Toshiba

PHOTO TRANSISTOR; Peak Wavelength (nm): 870; Configuration: SINGLE; Infrared (IR) Range: YES; Minimum Collector-emitter Breakdown Voltage: 20 V; Size: 3 mm;
TPS625(B) by Toshiba

TPS625(B)

Toshiba

PHOTO DARLINGTON; Shape: ROUND; Nominal Light Current: 2.5 mA; Infrared (IR) Range: YES; Configuration: SINGLE; Size: 1.5 mm;
SFH303-4 by Infineon Technologies

SFH303-4

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Size: 5 mm; Peak Wavelength (nm): 850; Maximum Power Dissipation: .2 W;
LTR-4206E by Lite-on Technology

LTR-4206E

Lite-on Technology

LTR-4206E by Lite-on Technology is a 3mm round phototransistor with high sensitivity. It operates b/w -40 °C to 85 °C and has a max power dissipation of 0.1 W. It has a nominal light current of 2 mA and a max dark current of 100 nA. This phototransistor is suitable for through-hole mounting applications.
BPW76B by Temic Semiconductors

BPW76B

Temic Semiconductors

PHOTO TRANSISTOR; Configuration: SINGLE; Size: 2.54 mm; No. of Functions: 1; Nominal Light Current: 1.2 mA; Minimum Collector-emitter Breakdown Voltage: 70 V;
SFH350F by Infineon Technologies

SFH350F

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 900; Maximum Response Time: .000015 s; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel;
SFH314-3 by Infineon Technologies

SFH314-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum On State Current: .05 A; Minimum Operating Temperature: -55 Cel;
SFH3219-Z by Osram Opto Semiconductors

SFH3219-Z

Osram Opto Semiconductors

SFH3219-Z by Osram Opto Semiconductors is a single phototransistor with a peak wavelength of 990nm. It operates b/w -40°C to 100°C, with a nominal light current of 0.063mA and max dark current of 50nA. Ideal for applications requiring infrared detection in compact spaces due to its small size of 2.575mm.
BPY62-4 by Infineon Technologies

BPY62-4

Infineon Technologies

Infineon's BPY62-4 phototransistor operates b/w -55°C to 125°C with peak wavelength of 850nm. It has a max power dissipation of 0.3W and response time of 9ns. Ideal for applications requiring through hole mounting, with max on-state current of 50mA.
TEFT4300 by Temic Semiconductors

TEFT4300

Temic Semiconductors

PHOTO TRANSISTOR; Size: 3 mm; Configuration: SINGLE; Shape: ROUND; Infrared (IR) Range: YES; Maximum Dark Current: 200 nA;
SFH300-4 by Infineon Technologies

SFH300-4

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; Maximum Dark Current: 100 nA; JESD-609 Code: e0;
TPS607A by Toshiba

TPS607A

Toshiba

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 75 Cel; Maximum On State Current: .05 A; Peak Wavelength (nm): 720;
SFH3201 by Infineon Technologies

SFH3201

Infineon Technologies

Infineon's SFH3201 phototransistor operates in -55 to 100°C range with peak wavelength of 860nm. It has max power dissipation of 0.165W and response time of 0.000005s. Ideal for surface mount applications, it can handle max on-state current of 0.015A.