Onsemi - SPS135C

  1. Home
  2. Onsemi - SPS135C
SPS135C by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number SPS135C
Description Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum On State Current: .02 A; Maximum Dark Current: 200 nA; Maximum Power Dissipation: .07 W;
Datasheet SPS135C Datasheet
In Stock1,594
NAME DESCRIPTION
Maximum Dark Current: 200 nA
Peak Wavelength (nm): 880
Maximum Power Dissipation: .07 W
Maximum Operating Temperature: 75 Cel
Sub-Category: Photo Transistors
Minimum Operating Temperature: -20 Cel
Mounting Feature: THROUGH HOLE MOUNT
Maximum On State Current: .02 A
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,594 - -

Popular Products

Category Top Products

TPS626(C) by Toshiba

TPS626(C)

Toshiba

PHOTO DARLINGTON; Shape: ROUND; Size: 1.5 mm; No. of Functions: 1; Minimum Operating Temperature: -25 Cel; Additional Features: HIGH SENSITIVITY; SIDE VIEW;
QSB363 by Qt Optoelectronics

QSB363

Qt Optoelectronics

PHOTO TRANSISTOR; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 880; Maximum Dark Current: 100 nA; Configuration: SINGLE;
TIL132 by Texas Instruments

TIL132

Texas Instruments

TIL132 by Texas Instruments is a phototransistor with 9 separate elements, operating temperature range of -65 to 125°C. It has nominal light current of 2mA and max dark current of 100nA. Ideal for applications requiring IR detection with min collector-emitter breakdown voltage of 50V.
BPT-BP1A34 by Yellow Stone

BPT-BP1A34

Yellow Stone

PHOTO TRANSISTOR; Maximum Dark Current: 100 nA; Shape: ROUND; Infrared (IR) Range: YES; Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE;
TPS616-BC by Toshiba

TPS616-BC

Toshiba

PHOTO TRANSISTOR; Configuration: SINGLE; Peak Wavelength (nm): 900; Minimum Operating Temperature: -30 Cel; Nominal Light Current: .017 mA; Infrared (IR) Range: YES;
VEMT2000X01 by Vishay Intertechnology

VEMT2000X01

Vishay Intertechnology

Vishay Intertechnology's VEMT2000X01 is a 1.8mm round phototransistor with peak wavelength of 860nm. It operates b/w -40°C to 100°C, with max power dissipation of 0.1W and on-state current of 0.05A. Ideal for IR applications due to its infrared range, it is surface mountable and has a min collector-emitter breakdown voltage of 20V.
EL121N(BC)(TA)-V by Everlight Electronics

EL121N(BC)(TA)-V

Everlight Electronics

PHOTO TRANSISTOR;
TIL628 by Texas Instruments

TIL628

Texas Instruments

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel;
BPW17N by Telefunken Microelectronics

BPW17N

Telefunken Microelectronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Response Time: .0000016 s; Maximum Power Dissipation: .1 W;
BPX43-5 by Infineon Technologies

BPX43-5

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -55 Cel; Peak Wavelength (nm): 880;
BPW77NA by Vishay Telefunken

BPW77NA

Vishay Telefunken

PHOTO TRANSISTOR; Shape: ROUND; Infrared (IR) Range: YES; Peak Wavelength (nm): 850; Nominal Light Current: 10 mA; Additional Features: HIGH SENSITIVITY;
TPS621(A) by Toshiba

TPS621(A)

Toshiba

PHOTO TRANSISTOR; Additional Features: SIDE VIEW; No. of Functions: 1; Shape: ROUND; Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE;
SFH3410-3 by Infineon Technologies

SFH3410-3

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; Peak Wavelength (nm): 570; Maximum On State Current: .02 A;
TPS622(A) by Toshiba

TPS622(A)

Toshiba

PHOTO TRANSISTOR; Minimum Operating Temperature: -25 Cel; Additional Features: SIDE VIEW; Size: 1.5 mm; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Operating Temperature: 85 Cel;
TPS618-A by Toshiba

TPS618-A

Toshiba

PHOTO TRANSISTOR; Size: 1.5 mm; Additional Features: SIDE VIEW; Peak Wavelength (nm): 870; Shape: ROUND; Infrared (IR) Range: YES;
SFH3204-Z by Osram Opto Semiconductors

SFH3204-Z

Osram Opto Semiconductors

SFH3204-Z by Osram Opto Semiconductors is a single phototransistor with peak wavelength of 920nm. It operates b/w -40 to 100°C, with max on-state current of 0.015A. Ideal for applications requiring IR detection in surface mount configurations.
VEMT2520X01 by Vishay Intertechnology

VEMT2520X01

Vishay Intertechnology

Vishay Intertechnology's VEMT2520X01 is a 1.8mm phototransistor with peak wavelength of 850nm. Operating b/w -40°C to 100°C, it has a max power dissipation of 0.1W and nominal light current of 6mA. Ideal for applications requiring IR detection in compact setups using surface mount technology.
TIL612 by Texas Instruments

TIL612

Texas Instruments

TIL612 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. With response time of 8μs and dark current of 25nA, it's ideal for through hole mounting in various applications.
SD2440-003 by Micro Switch

SD2440-003

Micro Switch

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .125 W;
LPT80A by Infineon Technologies

LPT80A

Infineon Technologies

Infineon Technologies' LPT80A is an 870nm peak wavelength phototransistor with a max operating temp of 100°C and min of -40°C. Featuring a 0.1W power dissipation, it can handle up to 0.05A on-state current. Ideal for applications requiring through-hole mounting in various industries.