Toshiba - TPS615-C

  1. Home
  2. Toshiba - TPS615-C
TPS615-C by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TPS615-C
Description PHOTO TRANSISTOR; Peak Wavelength (nm): 800; Configuration: SINGLE; Infrared (IR) Range: YES; Minimum Operating Temperature: -30 Cel; Maximum Dark Current: 100 nA;
Datasheet TPS615-C Datasheet
NAME DESCRIPTION
No. of Functions: 1
Infrared (IR) Range: YES
Maximum Dark Current: 100 nA
Optoelectronic Type: PHOTO TRANSISTOR
Shape: ROUND
Configuration: SINGLE
Size: 3.1 mm
Nominal Light Current: .06 mA
Peak Wavelength (nm): 800
Maximum Operating Temperature: 85 Cel
Minimum Operating Temperature: -30 Cel
Minimum Collector-emitter Breakdown Voltage: 30 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SFH300-4 by Infineon Technologies

SFH300-4

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; Maximum Dark Current: 100 nA; JESD-609 Code: e0;
TIL611 by Texas Instruments

TIL611

Texas Instruments

TIL611 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating max power of 0.05W. With response time of 0.000008s, it's ideal for applications requiring precise light detection in various environments.
TPS610 by Toshiba

TPS610

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 75 Cel; No. of Functions: 1; Shape: ROUND; Infrared (IR) Range: YES;
HLPT-B5D0-00000 by Broadcom

HLPT-B5D0-00000

Broadcom

PHOTO TRANSISTOR;
TPS615(BC,F) by Toshiba

TPS615(BC,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 800; Shape: ROUND; Maximum Operating Temperature: 85 Cel; No. of Functions: 1;
SFH3410-4 by Infineon Technologies

SFH3410-4

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 3 nA; Maximum On State Current: .02 A;
SFH309FA-6 by Infineon Technologies

SFH309FA-6

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Peak Wavelength (nm): 900; Minimum Operating Temperature: -55 Cel;
TIL406 by Texas Instruments

TIL406

Texas Instruments

TIL406 by Texas Instruments is a phototransistor with max temp of 125°C and min temp of -60°C. It has a max power dissipation of 0.05W, dark current of 25nA, and response time of 8µs. Ideal for applications requiring through hole mounting in various light sensing systems.
TPS617-B by Toshiba

TPS617-B

Toshiba

PHOTO DARLINGTON; Maximum Dark Current: 250 nA; Additional Features: HIGH SENSITIVITY; SIDE VIEW; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Operating Temperature: 75 Cel; Nominal Light Current: 1.7 mA;
TPS613-C by Toshiba

TPS613-C

Toshiba

PHOTO TRANSISTOR; Size: 3 mm; Nominal Light Current: .06 mA; Configuration: SINGLE; Maximum Operating Temperature: 75 Cel; Maximum Dark Current: 100 nA;
BPY62-4 by Infineon Technologies

BPY62-4

Infineon Technologies

Infineon's BPY62-4 phototransistor operates b/w -55°C to 125°C with peak wavelength of 850nm. It has a max power dissipation of 0.3W and response time of 9ns. Ideal for applications requiring through hole mounting, with max on-state current of 50mA.
TIL66 by Texas Instruments

TIL66

Texas Instruments

TIL66 by Texas Instruments is a phototransistor with peak wavelength of 820nm. It has max operating temp of 85°C and min operating temp of -40°C. With max power dissipation of 0.05W, it's ideal for applications requiring fast response time such as light sensing in industrial automation.
SFH313FA-3 by Osram Opto Semiconductors

SFH313FA-3

Osram Opto Semiconductors

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 870; Maximum Operating Temperature: 100 Cel; Size: 5 mm; Minimum Collector-emitter Breakdown Voltage: 70 V;
SFH320 by Infineon Technologies

SFH320

Infineon Technologies

SFH320 by Infineon Technologies is a single phototransistor with peak wavelength of 860nm. It operates b/w -40 to 100°C, has a max power dissipation of 0.165W, and can handle an on-state current of 0.015A. Ideal for applications requiring infrared detection in compact spaces due to its small size of 2.4mm and surface mount feature.
BPW77NA by Vishay Telefunken

BPW77NA

Vishay Telefunken

PHOTO TRANSISTOR; Shape: ROUND; Infrared (IR) Range: YES; Peak Wavelength (nm): 850; Nominal Light Current: 10 mA; Additional Features: HIGH SENSITIVITY;
SFH320-3-Z by Osram Opto Semiconductors

SFH320-3-Z

Osram Opto Semiconductors

Osram Opto Semiconductors SFH320-3-Z is a single phototransistor with peak wavelength of 980nm. It operates b/w -40 to 100°C, dissipating max 0.165W power. Ideal for applications requiring IR detection, it has a collector-emitter breakdown voltage of 35V and max on state current of 0.015A.
SFH3400-2 by Infineon Technologies

SFH3400-2

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Peak Wavelength (nm): 850; Minimum Operating Temperature: -40 Cel;
BPY62-4 by Siemens

BPY62-4

Siemens

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Shape: ROUND; Peak Wavelength (nm): 850; Nominal Light Current: 7.2 mA;
SFH302-4 by Infineon Technologies

SFH302-4

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum Power Dissipation: .15 W; Maximum Response Time: .000014 s;
BP103B2 by Infineon Technologies

BP103B2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Maximum Response Time: .0000075 s; Minimum Operating Temperature: -55 Cel;