Toshiba - TPS608A-A

  1. Home
  2. Toshiba - TPS608A-A
TPS608A-A by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number TPS608A-A
Description PHOTO TRANSISTOR; Minimum Operating Temperature: -25 Cel; Configuration: SINGLE; Maximum Operating Temperature: 85 Cel; Size: 1.5 mm; Peak Wavelength (nm): 820;
Datasheet TPS608A-A Datasheet
NAME DESCRIPTION
Maximum Dark Current: 100 nA
Shape: ROUND
Configuration: SINGLE
Size: 1.5 mm
Minimum Operating Temperature: -25 Cel
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PHOTO TRANSISTOR
Nominal Light Current: .04 mA
Peak Wavelength (nm): 820
Additional Features: SIDE VIEW
Maximum Operating Temperature: 85 Cel
Minimum Collector-emitter Breakdown Voltage: 30 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIL604HR2 by Texas Instruments

TIL604HR2

Texas Instruments

TIL604HR2 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, with max power dissipation of 0.05W. Ideal for applications requiring fast response time and IR detection in through-hole mounting setups.
SFH501-2 by Infineon Technologies

SFH501-2

Infineon Technologies

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 50 nA; Peak Wavelength (nm): 840;
TPS615-AB by Toshiba

TPS615-AB

Toshiba

PHOTO TRANSISTOR; Minimum Operating Temperature: -30 Cel; Nominal Light Current: .02 mA; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Dark Current: 100 nA; Configuration: SINGLE;
QSB363ZR by Fairchild Semiconductor

QSB363ZR

Fairchild Semiconductor

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE; Maximum Dark Current: 100 nA;
SPS235C by Onsemi

SPS235C

Onsemi

The Onsemi SPS235C is a PHOTO DARLINGTON phototransistor with peak wavelength of 850nm. It operates b/w -25 °C to 80°C, has max power dissipation of 0.05W, and response time of 0.00003s. Ideal for applications requiring through hole mounting, it can handle max on state current of 0.03A and dark current up to 1000nA.
TPS613-AB by Toshiba

TPS613-AB

Toshiba

PHOTO TRANSISTOR; Minimum Operating Temperature: -20 Cel; Nominal Light Current: .02 mA; Peak Wavelength (nm): 720; No. of Functions: 1; Shape: ROUND;
SFH3710-2/3-Z by Osram Opto Semiconductors

SFH3710-2/3-Z

Osram Opto Semiconductors

Osram Opto Semiconductors SFH3710-2/3-Z is a single phototransistor with peak wavelength of 570nm. It operates b/w -40°C to 85°C, producing nominal light current of 0.35mA and max dark current of 50nA. Ideal for applications requiring square shape optoelectronic components in compact 0.29mm size.
SFH309FA2 by Infineon Technologies

SFH309FA2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000005 s; Peak Wavelength (nm): 900; Maximum On State Current: .015 A;
TPS605-A by Toshiba

TPS605-A

Toshiba

PHOTO DARLINGTON; Maximum Dark Current: 250 nA; Configuration: SINGLE; No. of Functions: 1; Minimum Operating Temperature: 0 Cel; Shape: ROUND;
TPS601A(A,F) by Toshiba

TPS601A(A,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Size: 4.7 mm; No. of Functions: 1; Configuration: SINGLE; Maximum Power Dissipation: .15 W;
SFH303FA-4 by Infineon Technologies

SFH303FA-4

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 50 V; Maximum On State Current: .05 A; Minimum Operating Temperature: -40 Cel;
TEKT5400S by Telefunken Microelectronics

TEKT5400S

Telefunken Microelectronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum On State Current: .1 A; Maximum Power Dissipation: .15 W;
KDT00030ATR by Onsemi

KDT00030ATR

Onsemi

KDT00030ATR by Onsemi is a phototransistor with peak wavelength of 630nm. It operates b/w -40°C to 85°C, with max dark current of 40nA. Ideal for surface mount applications in optoelectronics.
QSE213C by Fairchild Semiconductor

QSE213C

Fairchild Semiconductor

QSE213C by Fairchild Semiconductor is a single phototransistor with a peak wavelength of 880nm. It has a min operating temperature of -40°C and a max power dissipation of 0.1W. This optoelectronic component is commonly used in applications requiring infrared sensing or detection.
TIL412 by Texas Instruments

TIL412

Texas Instruments

TIL412 by Texas Instruments is a PHOTO DARLINGTON phototransistor with max operating temp of 85°C and min of -40°C. It has max dark current of 100nA, response time of 0.001s, and on state current of 0.0001A. Ideal for optoelectronic applications requiring precise light detection in various environments.
TPS601A-C by Toshiba

TPS601A-C

Toshiba

PHOTO TRANSISTOR; Shape: ROUND; Maximum Operating Temperature: 125 Cel; Size: 4.7 mm; Nominal Light Current: .4 mA; Infrared (IR) Range: YES;
SFH3201-3 by Infineon Technologies

SFH3201-3

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 850; Maximum Power Dissipation: .12 W;
TIL608 by Texas Instruments

TIL608

Texas Instruments

TIL608 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. With a response time of 8μs and dark current of 25nA, it's ideal for surface mount applications in various industries.
OP520 by Tt Electronics Plc

OP520

Tt Electronics Plc

OP520 by Tt Electronics Plc is a phototransistor with peak wavelength of 935nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W and max on state current of 0.02A. Ideal for surface mount applications requiring high sensitivity in optoelectronics.
TIL601 by Texas Instruments

TIL601

Texas Instruments

TIL601 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, with max power dissipation of 0.05W. Ideal for applications requiring fast response time and IR detection in through-hole mounting configurations.