Texas Instruments - TIL609

  1. Home
  2. Texas Instruments - TIL609
TIL609 by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number TIL609
Description Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 25 nA; Maximum Response Time: .000008 s; Peak Wavelength (nm): 900;
In Stock1,278
NAME DESCRIPTION
Maximum Dark Current: 25 nA
Peak Wavelength (nm): 900
Maximum Power Dissipation: .05 W
Maximum Response Time: .000008 s
Maximum Operating Temperature: 125 Cel
Sub-Category: Photo Transistors
Minimum Operating Temperature: -60 Cel
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,278 - -

Popular Products

Category Top Products

SFH302-3 by Infineon Technologies

SFH302-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel;
SD3410-001 by Honeywell Sensing And Control

SD3410-001

Honeywell Sensing And Control

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 250 nA; Maximum Power Dissipation: .15 W; Minimum Operating Temperature: -55 Cel;
ASDL-6770-C22 by Broadcom

ASDL-6770-C22

Broadcom

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); No. of Functions: 1; Infrared (IR) Range: YES; Maximum Operating Temperature: 85 Cel; Shape: ROUND;
SFH309P3 by Infineon Technologies

SFH309P3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000006 s; Maximum Dark Current: 200 nA; Maximum Power Dissipation: .165 W;
TEPT5600 by Vishay Intertechnology

TEPT5600

Vishay Intertechnology

TEPT5600 by Vishay Intertechnology is a 5mm round phototransistor with peak wavelength of 570nm. It operates b/w -40°C to 85°C, has a collector-emitter breakdown voltage of 6V, and can handle max on state current of 0.02A. Ideal for optoelectronic applications requiring precise light detection in various environments.
BPY62-4 by Siemens

BPY62-4

Siemens

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Shape: ROUND; Peak Wavelength (nm): 850; Nominal Light Current: 7.2 mA;
TPS613-A by Toshiba

TPS613-A

Toshiba

PHOTO TRANSISTOR; No. of Functions: 1; Shape: ROUND; Peak Wavelength (nm): 720; Configuration: SINGLE; Infrared (IR) Range: NO;
OP800A by Optotek

OP800A

Optotek

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -65 Cel; Shape: ROUND; Peak Wavelength (nm): 890;
TPS613-BC by Toshiba

TPS613-BC

Toshiba

PHOTO TRANSISTOR; Size: 3 mm; Maximum Operating Temperature: 75 Cel; Minimum Collector-emitter Breakdown Voltage: 20 V; Shape: ROUND; Peak Wavelength (nm): 720;
EL121N(B)(TA)-V by Everlight Electronics

EL121N(B)(TA)-V

Everlight Electronics

PHOTO TRANSISTOR;
TPS605-B by Toshiba

TPS605-B

Toshiba

PHOTO DARLINGTON; Minimum Operating Temperature: 0 Cel; Infrared (IR) Range: NO; Size: 1.6 mm; Configuration: SINGLE; Additional Features: DOUBLE END; HIGH SENSITIVITY;
TIL65 by Texas Instruments

TIL65

Texas Instruments

TIL65 by Texas Instruments is a phototransistor with peak wavelength of 820nm. It has max operating temp of 85°C and min of -40°C. With features like 0.05W power dissipation, it's ideal for applications requiring fast response time such as light sensing in industrial automation.
TIL609 by Texas Instruments

TIL609

Texas Instruments

TIL609 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating max power of 0.05W. With response time of 0.000008s and dark current of 25nA, it's ideal for applications requiring precise light detection in various environments.
TEPT4400 by Vishay Intertechnology

TEPT4400

Vishay Intertechnology

TEPT4400 by Vishay Intertechnology is a 3mm round phototransistor with peak wavelength of 570nm. It has max operating temp of 85°C, min operating temp of -40°C, and max power dissipation of 0.1W. Ideal for optoelectronic applications requiring a single photo transistor configuration.
TPS605 by Toshiba

TPS605

Toshiba

PHOTO DARLINGTON; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: 0 Cel; Infrared (IR) Range: NO; Maximum Power Dissipation: .075 W;
SFH317F4 by Infineon Technologies

SFH317F4

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Operating Temperature: 100 Cel; Maximum Response Time: .000015 s;
TPS607A-A by Toshiba

TPS607A-A

Toshiba

PHOTO DARLINGTON; Maximum Operating Temperature: 75 Cel; Shape: ROUND; Peak Wavelength (nm): 720; Minimum Collector-emitter Breakdown Voltage: 30 V; Infrared (IR) Range: NO;
PH102 by Renesas Electronics

PH102

Renesas Electronics

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Additional Features: HIGH SENSITIVITY; Nominal Light Current: .18 mA; Size: 3.8 mm;
SFH320FA-4 by Infineon Technologies

SFH320FA-4

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Configuration: SINGLE; Maximum Response Time: .000008 s; Peak Wavelength (nm): 900;
SFH3201-2 by Infineon Technologies

SFH3201-2

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 850; Maximum Power Dissipation: .12 W;