Onsemi - SPS235C

  1. Home
  2. Onsemi - SPS235C
SPS235C by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number SPS235C
Description PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Maximum Response Time: .00003 s; Maximum On State Current: .03 A; Maximum Power Dissipation: .05 W;
Datasheet SPS235C Datasheet
In Stock2,095
NAME DESCRIPTION
Maximum Dark Current: 1000 nA
Optoelectronic Type: PHOTO DARLINGTON
Peak Wavelength (nm): 850
Maximum Power Dissipation: .05 W
Maximum Response Time: .00003 s
Maximum Operating Temperature: 80 Cel
Sub-Category: Photo Transistors
Minimum Operating Temperature: -25 Cel
Mounting Feature: THROUGH HOLE MOUNT
Maximum On State Current: .03 A
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,095 - -

Popular Products

Category Top Products

QSB363GR by Onsemi

QSB363GR

Onsemi

QSB363GR by Onsemi is a single phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W. Ideal for IR applications due to its min collector-emitter breakdown voltage of 30V and nominal light current of 1.5mA.
VEMT2523SLX01 by Vishay Intertechnology

VEMT2523SLX01

Vishay Intertechnology

Vishay Intertechnology's VEMT2523SLX01 is an 850nm peak wavelength phototransistor with a max operating temperature of 100°C. With a nominal light current of 2.7mA and min collector-emitter breakdown voltage of 20V, it is ideal for applications requiring precise light detection in environments ranging from -40°C to 100°C.
TPS613-AB by Toshiba

TPS613-AB

Toshiba

PHOTO TRANSISTOR; Minimum Operating Temperature: -20 Cel; Nominal Light Current: .02 mA; Peak Wavelength (nm): 720; No. of Functions: 1; Shape: ROUND;
TPS612-B by Toshiba

TPS612-B

Toshiba

PHOTO TRANSISTOR; Shape: ROUND; Peak Wavelength (nm): 870; Minimum Operating Temperature: -20 Cel; Nominal Light Current: .024 mA; Maximum Dark Current: 100 nA;
QSD123.A4R0 by Qt Optoelectronics

QSD123.A4R0

Qt Optoelectronics

QSD123.A4R0 by Qt Optoelectronics is a 5mm round phototransistor with max operating temp of 100°C and min of -40°C. It has nominal light current of 4mA, dark current of 100nA, and IR range. Ideal for applications requiring reliable photo detection in various temperature conditions.
3037 by Nte Electronics

3037

Nte Electronics

The Nte Electronics 3037 is a single phototransistor with a size of 4.69 mm, ideal for light sensing applications. It has a nominal light current of 10 mA and max dark current of 200 nA, making it suitable for use in various optoelectronic circuits requiring precise light detection.
TPS616(AB,F) by Toshiba

TPS616(AB,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 900; No. of Functions: 1; Maximum Operating Temperature: 85 Cel; Maximum On State Current: .02 A;
LS618 by Texas Instruments

LS618

Texas Instruments

LS618 by Texas Instruments is a single phototransistor with max temp of 125°C. It has nominal light current of 8mA, response time of 0.000008s, and IR range. Ideal for applications requiring fast response to light such as optical sensors or proximity detectors.
BPW77NA by Telefunken Microelectronics

BPW77NA

Telefunken Microelectronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Dark Current: 10 nA; Peak Wavelength (nm): 800;
TPS612-AB by Toshiba

TPS612-AB

Toshiba

PHOTO TRANSISTOR; Peak Wavelength (nm): 870; Configuration: SINGLE; Infrared (IR) Range: YES; Minimum Collector-emitter Breakdown Voltage: 20 V; Size: 3 mm;
PH116(L) by Renesas Electronics

PH116(L)

Renesas Electronics

PHOTO TRANSISTOR; Nominal Light Current: .2 mA; Maximum Operating Temperature: 85 Cel; Configuration: SINGLE; Minimum Operating Temperature: -30 Cel; Maximum Dark Current: 100 nA;
TPS605 by Toshiba

TPS605

Toshiba

PHOTO DARLINGTON; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: 0 Cel; Infrared (IR) Range: NO; Maximum Power Dissipation: .075 W;
QSB363C by Onsemi

QSB363C

Onsemi

The Onsemi QSB363C is a 2mm phototransistor with peak wavelength of 940nm. It operates b/w -25 °C to 85°C, with max power dissipation of 0.075W. Ideal for IR applications, it has a min collector-emitter breakdown voltage of 30V and nominal light current of 1.5mA.
TPS616(C,F) by Toshiba

TPS616(C,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum On State Current: .02 A; Shape: ROUND; Peak Wavelength (nm): 900;
SFH325FA-Z by Osram Opto Semiconductors

SFH325FA-Z

Osram Opto Semiconductors

SFH325FA-Z by Osram Opto Semiconductors is a 2.4mm phototransistor with peak wavelength of 980nm. It operates b/w -40°C to 100°C, has a collector-emitter breakdown voltage of 35V, and nominal light current of 0.016mA. Ideal for applications requiring IR detection in compact spaces.
SFH501-1 by Infineon Technologies

SFH501-1

Infineon Technologies

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 840; Maximum Dark Current: 50 nA; Maximum On State Current: .02 A;
SFH303FA-3 by Infineon Technologies

SFH303FA-3

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Response Time: .000013 s; Configuration: SINGLE;
PT91-21B/TR7 by Everlight Electronics

PT91-21B/TR7

Everlight Electronics

PT91-21B/TR7 by Everlight Electronics is a 1.9mm phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W and on-state current of 0.02A. Ideal for IR applications due to its infrared range and surface mount feature.
TPS625 by Toshiba

TPS625

Toshiba

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Size: 1.5 mm; Nominal Light Current: 2 mA; Shape: ROUND;
SFH320-2 by Infineon Technologies

SFH320-2

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Maximum Response Time: .000006 s; Minimum Operating Temperature: -55 Cel; Maximum Power Dissipation: .165 W; Maximum Dark Current: 200 nA;