ROHM - RPM-075PTT86

  1. Home
  2. ROHM - RPM-075PTT86
RPM-075PTT86 by ROHM

Image shown is a representation only.

Manufacturer ROHM
Manufacturer's Part Number RPM-075PTT86
Description PHOTO TRANSISTOR; Terminal Finish: TIN SILVER COPPER; Maximum Operating Temperature: 85 Cel; Size: 1.4 mm; Peak Wavelength (nm): 600; Minimum Collector-emitter Breakdown Voltage: 20 V;
Datasheet RPM-075PTT86 Datasheet
NAME DESCRIPTION
Other Names: 511-1356-6
511-1356-2
Q8107642
RPM075PTT86
RPM-075PTT86-ND
511-1356-1
Maximum Dark Current: 500 nA
Shape: RECTANGULAR
Configuration: SINGLE
Size: 1.4 mm
Terminal Finish: TIN SILVER COPPER
JESD-609 Code: e1
Minimum Operating Temperature: -30 Cel
No. of Functions: 1
Infrared (IR) Range: NO
Optoelectronic Type: PHOTO TRANSISTOR
Nominal Light Current: .4 mA
Peak Wavelength (nm): 600
Maximum Operating Temperature: 85 Cel
Minimum Collector-emitter Breakdown Voltage: 20 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIL65 by Texas Instruments

TIL65

Texas Instruments

TIL65 by Texas Instruments is a phototransistor with peak wavelength of 820nm. It has max operating temp of 85°C and min of -40°C. With features like 0.05W power dissipation, it's ideal for applications requiring fast response time such as light sensing in industrial automation.
SFH313-2 by Infineon Technologies

SFH313-2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Peak Wavelength (nm): 850; JESD-609 Code: e0;
TPS616-B by Toshiba

TPS616-B

Toshiba

PHOTO TRANSISTOR; Minimum Operating Temperature: -30 Cel; Nominal Light Current: .017 mA; Shape: ROUND; Peak Wavelength (nm): 900; Maximum Operating Temperature: 85 Cel;
TPS605(LB) by Toshiba

TPS605(LB)

Toshiba

PHOTO DARLINGTON; No. of Functions: 1; Maximum Dark Current: 250 nA; Size: 1.6 mm; Infrared (IR) Range: NO; Minimum Collector-emitter Breakdown Voltage: 30 V;
SFH3410-3 by Infineon Technologies

SFH3410-3

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; Peak Wavelength (nm): 570; Maximum On State Current: .02 A;
QSC112 by Onsemi

QSC112

Onsemi

QSC112 by Onsemi is a 3mm single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, has max power dissipation of 0.1W, and response time of 0.000004s. Ideal for IR applications due to its infrared range, it features tin/lead terminal finish and through hole mounting.
TIL623 by Texas Instruments

TIL623

Texas Instruments

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel;
BPX81 by Infineon Technologies

BPX81

Infineon Technologies

BPX81 by Infineon Technologies is an 850nm phototransistor with a max operating temperature of 80°C and a min operating temperature of -40°C. It has a max power dissipation of 0.09W and a max dark current of 200nA. This phototransistor is commonly used in applications requiring through hole mounting and can handle a max on-state current of 0.05A.
TIL606 by Texas Instruments

TIL606

Texas Instruments

TIL606 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. With fast response time of 8ns, it's ideal for surface mount applications requiring precise light detection.
QSB363.ZR by Qt Optoelectronics

QSB363.ZR

Qt Optoelectronics

QSB363.ZR by Qt Optoelectronics is a 1.9mm ROUND PHOTO TRANSISTOR with max operating temp of 85°C and min of -40°C. It has 0.7mA light current, 100nA dark current, and 30V breakdown voltage. Ideal for applications requiring precise light sensing in compact spaces.
BPX83 by Infineon Technologies

BPX83

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Dark Current: 200 nA; Maximum Operating Temperature: 85 Cel;
QSB363ZR by Onsemi

QSB363ZR

Onsemi

QSB363ZR by Onsemi is a 1.9mm ROUND PHOTO TRANSISTOR with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W. Ideal for IR applications due to its min collector-emitter breakdown voltage of 30V and surface mounting feature.
SFH303F2 by Infineon Technologies

SFH303F2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 50 nA; Maximum Operating Temperature: 100 Cel; Peak Wavelength (nm): 900;
TPS607A-C by Toshiba

TPS607A-C

Toshiba

PHOTO DARLINGTON; Size: 1.5 mm; Maximum Operating Temperature: 75 Cel; No. of Functions: 1; Infrared (IR) Range: NO; Additional Features: HIGH SENSITIVITY; SIDE VIEW;
QSE113E3R0 by Onsemi

QSE113E3R0

Onsemi

QSE113E3R0 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, has response time of 0.000008s, and collector-emitter breakdown voltage of 30V. Ideal for optoelectronic applications requiring fast and precise light detection in compact spaces.
LS613 by Texas Instruments

LS613

Texas Instruments

LS613 by Texas Instruments is a single phototransistor with max temp of 125°C. It has nominal light current of 3mA and response time of 0.000008s. Ideal for applications requiring IR detection, it features a min breakdown voltage of 50V and through hole mounting.
SPS181C by Onsemi

SPS181C

Onsemi

SPS181C by Onsemi is a phototransistor with peak wavelength of 880nm. It operates b/w -20 °C to 75°C, dissipating max power of 0.07W. With max on state current of 0.02A and dark current at 200nA, it's ideal for through hole mounting in various applications.
SFH313FA-3 by Siemens

SFH313FA-3

Siemens

PHOTO TRANSISTOR; Peak Wavelength (nm): 870; Size: 5 mm; Shape: ROUND; Maximum Dark Current: 200 nA; No. of Functions: 1;
SFH3219-Z by Osram Opto Semiconductors

SFH3219-Z

Osram Opto Semiconductors

SFH3219-Z by Osram Opto Semiconductors is a single phototransistor with a peak wavelength of 990nm. It operates b/w -40°C to 100°C, with a nominal light current of 0.063mA and max dark current of 50nA. Ideal for applications requiring infrared detection in compact spaces due to its small size of 2.575mm.
TIL627 by Texas Instruments

TIL627

Texas Instruments

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .000008 s;