Onsemi - SPS203C

  1. Home
  2. Onsemi - SPS203C
SPS203C by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number SPS203C
Description PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -25 Cel; Maximum Dark Current: 1000 nA; Maximum On State Current: .05 A; Maximum Operating Temperature: 100 Cel;
Datasheet SPS203C Datasheet
In Stock1,371
NAME DESCRIPTION
Maximum Dark Current: 1000 nA
Optoelectronic Type: PHOTO DARLINGTON
Peak Wavelength (nm): 850
Maximum Power Dissipation: .05 W
Maximum Response Time: .00003 s
Maximum Operating Temperature: 100 Cel
Sub-Category: Photo Transistors
Minimum Operating Temperature: -25 Cel
Mounting Feature: THROUGH HOLE MOUNT
Maximum On State Current: .05 A
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,371 - -

Popular Products

Category Top Products

OP800A by Tt Electronics Plc

OP800A

Tt Electronics Plc

OP800A by Tt Electronics Plc is a single phototransistor with peak wavelength of 890nm. It operates b/w -65°C to 125°C, with max power dissipation of 0.25W. Ideal for applications requiring optoelectronic sensing in the infrared range.
TEMT6200FX01 by Vishay Intertechnology

TEMT6200FX01

Vishay Intertechnology

Vishay Intertechnology's TEMT6200FX01 is a 2mm single phototransistor with peak wavelength of 550nm. It operates b/w -40 to 100°C, has max power dissipation of 0.1W, and collector-emitter breakdown voltage of 6V. Ideal for surface mount applications requiring optoelectronic sensing in various industries.
PT42-21B/TR8 by Everlight Electronics

PT42-21B/TR8

Everlight Electronics

PT42-21B/TR8 by Everlight Electronics is a 1.8mm round phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W and on-state current of 0.02A. Ideal for IR applications, it has a min collector-emitter breakdown voltage of 30V and nominal light current of 3mA.
QSE113E3R0 by Onsemi

QSE113E3R0

Onsemi

QSE113E3R0 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, has response time of 0.000008s, and collector-emitter breakdown voltage of 30V. Ideal for optoelectronic applications requiring fast and precise light detection in compact spaces.
PT480FE0000F by Sharp Corporation

PT480FE0000F

Sharp Corporation

Sharp Corporation's PT480FE0000F is a 1.6mm PHOTO TRANSISTOR with peak wavelength of 860nm. It operates b/w -25°C to 85°C, with collector-emitter breakdown voltage of 35V. Ideal for applications requiring infrared detection and light current of 0.8mA with low dark current at 100nA.
SFH3211FA by Infineon Technologies

SFH3211FA

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; No. of Functions: 1; Maximum On State Current: .015 A;
TIL629 by Texas Instruments

TIL629

Texas Instruments

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Maximum Response Time: .000008 s; Minimum Operating Temperature: -40 Cel;
ASDL-6771-C22 by Broadcom

ASDL-6771-C22

Broadcom

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); No. of Functions: 1; Configuration: SINGLE; Size: 1.6 mm; JESD-609 Code: e3;
PT8L by Renesas Electronics

PT8L

Renesas Electronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 150 Cel; Minimum Operating Temperature: -40 Cel; Maximum Power Dissipation: .25 W;
SFH303F2 by Infineon Technologies

SFH303F2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 50 nA; Maximum Operating Temperature: 100 Cel; Peak Wavelength (nm): 900;
RPT-37PB3F by ROHM

RPT-37PB3F

ROHM

ROHM's RPT-37PB3F is a 3.1mm single phototransistor with peak wavelength of 800nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.15W and on-state current of 0.03A. Ideal for applications requiring IR detection in through-hole mounting setups.
SFH3410 by Infineon Technologies

SFH3410

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: 3 nA; Maximum On State Current: .02 A; Peak Wavelength (nm): 570; Maximum Operating Temperature: 85 Cel;
TIL135 by Texas Instruments

TIL135

Texas Instruments

TIL135 by Texas Instruments is a phototransistor with 12 separate elements. It operates in temperatures from -65°C to 125°C, with nominal light current of 2mA and max dark current of 100nA. Ideal for applications requiring IR detection and a min collector-emitter breakdown voltage of 50V.
QSD124 by Fairchild Semiconductor

QSD124

Fairchild Semiconductor

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Power Dissipation: .1 W; Shape: ROUND; JESD-609 Code: e3;
BPW77NA by Temic Semiconductors

BPW77NA

Temic Semiconductors

PHOTO TRANSISTOR; Nominal Light Current: 10 mA; Infrared (IR) Range: YES; Peak Wavelength (nm): 850; Configuration: SINGLE; Maximum Dark Current: 100 nA;
SFH309PF3 by Infineon Technologies

SFH309PF3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .015 A; Maximum Operating Temperature: 100 Cel; Maximum Dark Current: 200 nA;
OP600B by Optotek

OP600B

Optotek

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Configuration: SINGLE; Shape: ROUND; Minimum Operating Temperature: -65 Cel; Minimum Collector-emitter Breakdown Voltage: 25 V;
BPX43-5 by Infineon Technologies

BPX43-5

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -55 Cel; Peak Wavelength (nm): 880;
TIL614 by Texas Instruments

TIL614

Texas Instruments

TIL614 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating max power of 0.05W. With response time of 0.000008s and dark current of 25nA, it's ideal for applications requiring precise light detection in various environments.
BP103 by Infineon Technologies

BP103

Infineon Technologies

Infineon Technologies' BP103 phototransistor operates b/w -40°C to 80°C with peak wavelength of 850nm. It has a max on-state current of 0.1A and dark current of 100nA, making it ideal for through-hole mounting applications.