Broadcom - ASDL-6770-C22

  1. Home
  2. Broadcom - ASDL-6770-C22
ASDL-6770-C22 by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number ASDL-6770-C22
Description PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); No. of Functions: 1; Infrared (IR) Range: YES; Maximum Operating Temperature: 85 Cel; Shape: ROUND;
Datasheet ASDL-6770-C22 Datasheet
In Stock233
NAME DESCRIPTION
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PHOTO TRANSISTOR
Shape: ROUND
Configuration: SINGLE
Maximum Operating Temperature: 85 Cel
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
233 - -

Popular Products

Category Top Products

SFH3410 by Infineon Technologies

SFH3410

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: 3 nA; Maximum On State Current: .02 A; Peak Wavelength (nm): 570; Maximum Operating Temperature: 85 Cel;
TIL99 by Texas Instruments

TIL99

Texas Instruments

TIL99 by Texas Instruments is a phototransistor with max temp of 125°C and min temp of -60°C. It has a max power dissipation of 0.25W, on-state current of 0.05A, and response time of 8μs. Ideal for applications requiring precise light detection in harsh environments.
BPW77NA by Vishay Intertechnology

BPW77NA

Vishay Intertechnology

Vishay Intertechnology's BPW77NA is a 4mm phototransistor with peak wavelength of 850nm. It operates b/w -40 to 125°C, has a response time of 0.0000038s, and features matte tin terminal finish. Ideal for applications requiring IR detection in through-hole mounting setups.
KDT00030ATR by Onsemi

KDT00030ATR

Onsemi

KDT00030ATR by Onsemi is a phototransistor with peak wavelength of 630nm. It operates b/w -40°C to 85°C, with max dark current of 40nA. Ideal for surface mount applications in optoelectronics.
QSB363ZR by Fairchild Semiconductor

QSB363ZR

Fairchild Semiconductor

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE; Maximum Dark Current: 100 nA;
TIL58 by Texas Instruments

TIL58

Texas Instruments

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000002 s; Maximum Power Dissipation: .05 W; Maximum Dark Current: 25 nA;
QSD124 by Onsemi

QSD124

Onsemi

The Onsemi QSD124 is a 5mm single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, with max power dissipation of 0.1W. Ideal for applications requiring fast response time and IR range detection in through hole mounting setups.
BP103 by Infineon Technologies

BP103

Infineon Technologies

Infineon Technologies' BP103 phototransistor operates b/w -40°C to 80°C with peak wavelength of 850nm. It has a max on-state current of 0.1A and dark current of 100nA, making it ideal for through-hole mounting applications.
BPW17N by Telefunken Microelectronics

BPW17N

Telefunken Microelectronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Response Time: .0000016 s; Maximum Power Dissipation: .1 W;
SML-810TBT86 by ROHM

SML-810TBT86

ROHM

PHOTO TRANSISTOR; Terminal Finish: GOLD OVER NICKEL; JESD-609 Code: e4;
SFH303FA-3 by Infineon Technologies

SFH303FA-3

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Response Time: .000013 s; Configuration: SINGLE;
VEMT2523SLX01 by Vishay Intertechnology

VEMT2523SLX01

Vishay Intertechnology

Vishay Intertechnology's VEMT2523SLX01 is an 850nm peak wavelength phototransistor with a max operating temperature of 100°C. With a nominal light current of 2.7mA and min collector-emitter breakdown voltage of 20V, it is ideal for applications requiring precise light detection in environments ranging from -40°C to 100°C.
QSD123 by Onsemi

QSD123

Onsemi

The Onsemi QSD123 is a 5mm single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, with max power dissipation of 0.1W. Ideal for applications requiring fast response time and IR detection in through-hole mounting setups.
TPS616 by Toshiba

TPS616

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Configuration: SINGLE; Shape: ROUND; Nominal Light Current: .01 mA; Minimum Operating Temperature: -30 Cel;
OP644SL by Optek Technology

OP644SL

Optek Technology

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -65 Cel; Peak Wavelength (nm): 930; Maximum Power Dissipation: .05 W; Nominal Light Current: 7 mA;
TPS608A-B by Toshiba

TPS608A-B

Toshiba

PHOTO TRANSISTOR; Maximum Operating Temperature: 85 Cel; No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 30 V; Shape: ROUND; Additional Features: SIDE VIEW;
TPS622 by Toshiba

TPS622

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Shape: ROUND; Maximum On State Current: .05 A; Maximum Power Dissipation: .075 W; Minimum Collector-emitter Breakdown Voltage: 30 V;
QSB363 by Qt Optoelectronics

QSB363

Qt Optoelectronics

PHOTO TRANSISTOR; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 880; Maximum Dark Current: 100 nA; Configuration: SINGLE;
BP103-6 by Infineon Technologies

BP103-6

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum On State Current: .1 A; Maximum Power Dissipation: .3 W;
QSE133 by Onsemi

QSE133

Onsemi

QSE133 by Onsemi is a single phototransistor with peak wavelength of 880nm. It has a max operating temp of 100 °C and min of -40°C. Ideal for optoelectronic applications requiring fast response time, with nominal light current of 9mA and dark current less than 100nA.