Tin/Lead (Sn/Pb) Phototransistors 175

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Part	Manufacturer	Optoelectronic Type	Mounting Feature	Terminal Finish	Configuration	Size	Maximum Dark Current	No. of Functions	Infrared (IR) Range	Peak Wavelength (nm)	Maximum Response Time	Sub-Category	Maximum Operating Temperature	Shape	Minimum Operating Temperature	Minimum Collector-emitter Breakdown Voltage	Maximum Power Dissipation	Additional Features	Nominal Light Current	JESD-609 Code	Maximum On State Current
SFH309P2	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			860	.000005 s	Photo Transistors	100 Cel		-55 Cel		.165 W			e0	.015 A
SFH314FA	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			10 nA			870	.000012 s	Photo Transistors	100 Cel		-55 Cel		.2 W			e0	.05 A
SFH303F4	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			50 nA			900	.000015 s	Photo Transistors	100 Cel		-55 Cel		.2 W			e0	.05 A
SFH303-2	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			50 nA			850	.000011 s	Photo Transistors	100 Cel		-55 Cel		.2 W			e0	.05 A
SFH309PFA2	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			900	.000005 s	Photo Transistors	100 Cel		-55 Cel		.165 W			e0	.015 A
SFH3410-1	Infineon Technologies		SURFACE MOUNT	Tin/Lead (Sn/Pb)			3 nA			570		Photo Transistors	100 Cel		-40 Cel					e0	.02 A
SFH317-4	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			2 nA			850	.000015 s	Photo Transistors	100 Cel		-55 Cel		.2 W			e0	.05 A
BPX87	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA				.000008 s	Photo Transistors	95 Cel		-40 Cel					e0
SFH325FA	Infineon Technologies	PHOTO TRANSISTOR	SURFACE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	2.4 mm	200 nA	1	YES	900		Photo Transistors	100 Cel	ROUND	-40 Cel	35 V	.165 W		.016 mA	e0	.015 A
SFH309PFA3	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			900	.000006 s	Photo Transistors	100 Cel		-55 Cel		.165 W			e0	.015 A
BPY62	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			850		Photo Transistors	125 Cel		-55 Cel		.2 W			e0	.1 A
TPS607A	Toshiba	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	1.5 mm	250 nA	1	NO	720		Photo Transistors	75 Cel	ROUND	-25 Cel	30 V	.075 W	HIGH SENSITIVITY; SIDE VIEW	2 mA	e0	.05 A
TPS626	Toshiba	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	1.5 mm	250 nA	1	YES	870		Photo Transistors	85 Cel	ROUND	-25 Cel	30 V	.075 W	HIGH SENSITIVITY; SIDE VIEW	1.4 mA	e0	.04 A
TPS621	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	1.5 mm	100 nA	1	YES	820		Photo Transistors	85 Cel	ROUND	-25 Cel	30 V	.075 W	SIDE VIEW	.1 mA	e0	.05 A
TPS606	Toshiba	PHOTO TRANSISTOR	SURFACE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	1.65 mm	100 nA	1	NO	720	.0002 s	Photo Transistors	85 Cel	ROUND	-25 Cel	20 V	.05 W	DOUBLE END	.04 mA	e0	.02 A
TPS604(F)	Toshiba		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			800		Photo Transistors	125 Cel		-40 Cel		.15 W			e0	.05 A
TPS614	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	4.7 mm	200 nA	1	YES	800		Photo Transistors	125 Cel	ROUND	-40 Cel	40 V		HIGH SENSITIVITY	1.5 mA	e0
TPS621(B,F)	Toshiba		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			820		Photo Transistors	85 Cel		-25 Cel		.075 W			e0	.05 A
TPS625	Toshiba	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	1.5 mm	250 nA	1	YES	820		Photo Transistors	85 Cel	ROUND	-25 Cel	30 V	.075 W	HIGH SENSITIVITY; SIDE VIEW	2 mA	e0	.04 A
TPS603	Toshiba	PHOTO TRANSISTOR		Tin/Lead (Sn/Pb)	SINGLE	3 mm	100 nA	1					75 Cel	ROUND	-20 Cel	20 V		TTL COMPATIBLE	.01 mA	e0
TPS605	Toshiba	PHOTO DARLINGTON	SURFACE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	1.6 mm	250 nA	1	NO	720		Photo Transistors	70 Cel	ROUND	0 Cel	30 V	.075 W	DOUBLE END; HIGH SENSITIVITY	1 mA	e0	.04 A
TPS617	Toshiba	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	1.5 mm	250 nA	1	YES	870		Photo Transistors	75 Cel	ROUND	-25 Cel	30 V		HIGH SENSITIVITY; SIDE VIEW	1.4 mA	e0
TPS614(F)	Toshiba		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			800		Photo Transistors	125 Cel		-40 Cel		.15 W			e0	.05 A
TPS604	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	4.7 mm	200 nA	1	YES	800		Photo Transistors	125 Cel	ROUND	-40 Cel	40 V		HIGH SENSITIVITY	.2 mA	e0	.05 A
PH102	Renesas Electronics	PHOTO TRANSISTOR	SURFACE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	3.8 mm	200 nA	1			.000005 s	Photo Transistors	85 Cel	ROUND	-30 Cel	30 V	.1 W	HIGH SENSITIVITY	.18 mA	e0	.04 A
PH101	Renesas Electronics	PHOTO DARLINGTON	SURFACE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	3.8 mm	500 nA	1		850		Photo Transistors	85 Cel	ROUND		20 V	.1 W	HIGH SENSITIVITY	12 mA	e0	.05 A
PH109	Renesas Electronics	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			400 nA				.00002 s	Photo Transistors	80 Cel		-20 Cel		.1 W			e0	.05 A
PH107	Renesas Electronics	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			400 nA					Photo Transistors	100 Cel				.1 W			e0	.05 A
PT8L	Renesas Electronics		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)								Photo Transistors	150 Cel		-40 Cel		.25 W			e0	.03 A
PH104	Renesas Electronics	PHOTO TRANSISTOR	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	5 mm	100 nA	1		780		Photo Transistors	100 Cel	RECTANGULAR		30 V	.1 W		.02 mA	e0	.04 A
PH108A-T	Renesas Electronics	PHOTO TRANSISTOR		Tin/Lead (Sn/Pb)	SINGLE		100 nA	1	YES					ROUND		30 V			.6 mA	e0

Phototransistors

A phototransistor is an electronic component that uses light to control the flow of electrical current. It is a type of bipolar transistor that is designed to respond to the presence of light by amplifying the current flowing through it. Phototransistors are widely used in a variety of applications, including in optical communication systems, photodetectors, and motion detectors.

Phototransistors work by using light to generate a flow of electrons that controls the flow of current through the transistor. When light hits the phototransistor, it causes electrons to be released, which flow through the transistor and control the current flowing through it. The current flowing through the transistor can be amplified and used to control other components in a circuit.