Infineon Technologies - SFH3410-1

  1. Home
  2. Infineon Technologies - SFH3410-1
SFH3410-1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number SFH3410-1
Description Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; JESD-609 Code: e0; Peak Wavelength (nm): 570;
Datasheet SFH3410-1 Datasheet
In Stock299
NAME DESCRIPTION
Maximum Dark Current: 3 nA
Peak Wavelength (nm): 570
Maximum Operating Temperature: 100 Cel
Sub-Category: Photo Transistors
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
Maximum On State Current: .02 A
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
299 - -

Popular Products

Category Top Products

SFH3400-3 by Infineon Technologies

SFH3400-3

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 850; Maximum Dark Current: 200 nA; JESD-609 Code: e0;
QSB363 by Qt Optoelectronics

QSB363

Qt Optoelectronics

PHOTO TRANSISTOR; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 880; Maximum Dark Current: 100 nA; Configuration: SINGLE;
TIL624 by Texas Instruments

TIL624

Texas Instruments

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .000008 s;
BPW17N by Telefunken Microelectronics

BPW17N

Telefunken Microelectronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Response Time: .0000016 s; Maximum Power Dissipation: .1 W;
ASDL-6771-C41 by Broadcom

ASDL-6771-C41

Broadcom

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Minimum Operating Temperature: -40 Cel; Shape: ROUND; Size: 1.6 mm; No. of Functions: 1;
QSD124 by Onsemi

QSD124

Onsemi

The Onsemi QSD124 is a 5mm single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, with max power dissipation of 0.1W. Ideal for applications requiring fast response time and IR range detection in through hole mounting setups.
HLPT-B5D0-00000 by Broadcom

HLPT-B5D0-00000

Broadcom

PHOTO TRANSISTOR;
VEMT2520X01 by Vishay Intertechnology

VEMT2520X01

Vishay Intertechnology

Vishay Intertechnology's VEMT2520X01 is a 1.8mm phototransistor with peak wavelength of 850nm. Operating b/w -40°C to 100°C, it has a max power dissipation of 0.1W and nominal light current of 6mA. Ideal for applications requiring IR detection in compact setups using surface mount technology.
SFH3710-3/4 by Osram Opto Semiconductors

SFH3710-3/4

Osram Opto Semiconductors

Osram Opto SFH3710-3/4 is a single phototransistor with peak wavelength of 570nm. It operates b/w -40 to 85°C, with max on-state current of 0.02A. Ideal for surface mount applications requiring light sensing in the range of 0.004mA to 50nA dark current.
SFH313FA by Osram Opto Semiconductors

SFH313FA

Osram Opto Semiconductors

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Size: 5 mm; Configuration: SINGLE; Minimum Operating Temperature: -40 Cel;
QSD722 by Onsemi

QSD722

Onsemi

QSD722 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, with max power dissipation of 0.1W. Ideal for IR applications due to its fast response time of 6μs and collector-emitter breakdown voltage of 30V.
LS618 by Texas Instruments

LS618

Texas Instruments

LS618 by Texas Instruments is a single phototransistor with max temp of 125°C. It has nominal light current of 8mA, response time of 0.000008s, and IR range. Ideal for applications requiring fast response to light such as optical sensors or proximity detectors.
TPS611(F) by Toshiba

TPS611(F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Additional Features: HIGH SENSITIVITY; Shape: ROUND; Maximum Power Dissipation: .15 W; Infrared (IR) Range: YES;
SFH310-3 by Infineon Technologies

SFH310-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum On State Current: .05 A; Maximum Operating Temperature: 100 Cel;
L14N2 by Renesas Electronics

L14N2

Renesas Electronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 150 Cel; Peak Wavelength (nm): 880; Maximum Response Time: .000014 s; Minimum Operating Temperature: -55 Cel;
PT12-21C/TR8 by Everlight Electronics

PT12-21C/TR8

Everlight Electronics

Everlight Electronics' PT12-21C/TR8 is a 2mm single phototransistor with peak wavelength of 940nm. Operating temperature ranges from -25°C to 85°C. Ideal for applications requiring infrared detection and collector-emitter breakdown voltage of 30V.
QSD122 by Qt Optoelectronics

QSD122

Qt Optoelectronics

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 30 V; Peak Wavelength (nm): 880; Infrared (IR) Range: YES;
BPX43-2 by Infineon Technologies

BPX43-2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .33 W; Minimum Operating Temperature: -55 Cel; Peak Wavelength (nm): 880;
OP802WSL by Optotek

OP802WSL

Optotek

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; No. of Functions: 1; Peak Wavelength (nm): 930; Maximum On State Current: .05 A; Maximum Operating Temperature: 125 Cel;
PH107 by Renesas Electronics

PH107

Renesas Electronics

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; JESD-609 Code: e0; Maximum Dark Current: 400 nA;