1 PPM/FIRST YEAR TCXO Clock Oscillators 148

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Part	Manufacturer	Oscillator Type	Mounting Feature	No. of Terminals	Frequency Stability	Frequency Adjustment (Mechanical)	Aging	Package Body Material	Maximum Supply Voltage	Output Load	Maximum Supply Current	Nominal Supply Voltage	Package Equivalence Code	Maximum Rise Time	Physical Dimension	Minimum Supply Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Nominal Operating Frequency	Maximum Fall Time	Maximum Symmetry (%)	Additional Features	JESD-609 Code
AST3TQ-T-40.000MHZ-28	Abracon	LVCMOS	SURFACE MOUNT	4	.28 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF	7 mA	3.3 V	DILCC4,.2,200	6 ms	7.0mm x 5.0mm x 1.9mm	3.135 V	85 Cel	-40 Cel		40 MHz	6 ns	55/45
SIT1552AI-JE-DCC-32.768E	Sitime	LVCMOS	SURFACE MOUNT		5 %	NO	1 PPM/FIRST YEAR		3.63 V	15 pF				200 ms	1.54mm x 0.84mm x 0.6mm	1.5 V	85 Cel	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	.032768 MHz	200 ns	52/48	TR	e1
DS32KHZSN	Maxim Integrated	CMOS	SURFACE MOUNT	16	7.5 %	NO	1 PPM/FIRST YEAR		5.5 V	15 pF	.22 mA	5 V	SOP16,.4	200 ms	10.46mm x 7.62mm x 2.67mm	4.5 V	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	.032 MHz	60 ns	55/45		e0
DS32KHZSN#	Analog Devices	CMOS	SURFACE MOUNT	16	7.5 %	NO	1 PPM/FIRST YEAR		5.5 V	15 pF	.22 mA	5 V	SOP16,.4	200 ms	10.46mm x 7.62mm x 2.67mm	4.5 V	85 Cel	-40 Cel	Matte Tin (Sn) - annealed	.032 MHz	60 ns	55/45		e3
AST3TQ-T-40.000MHZ-28-T5	Abracon	LVCMOS	SURFACE MOUNT	4	.28 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF	7 mA	3.3 V	DILCC4,.2,200	6 ms	7.0mm x 5.0mm x 1.9mm	3.135 V	85 Cel	-40 Cel		40 MHz	6 ns	55/45
SIT1552AI-JF-DCC-32.768E	Sitime	LVCMOS	SURFACE MOUNT		10 %	NO	1 PPM/FIRST YEAR		3.63 V	15 pF				200 ms	1.54mm x 0.84mm x 0.6mm	1.5 V	85 Cel	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	.032768 MHz	200 ns	52/48	TR	e1
AST3TQ-T-40.000MHZ-28-T2	Abracon	LVCMOS	SURFACE MOUNT	4	.28 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF	7 mA	3.3 V	DILCC4,.2,200	6 ms	7.0mm x 5.0mm x 1.9mm	3.135 V	85 Cel	-40 Cel		40 MHz	6 ns	55/45
O26.0-JT32C-A-K-3.3-LF	Jauch Quartz	HCMOS	SURFACE MOUNT		2.5 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF		3.3 V		5 ms	3.2mm x 2.5mm x 1.0mm	3.135 V	85 Cel	-40 Cel		26 MHz	5 ns	55/45	ENABLE/DISABLE FUNCTION; BULK; TR, 7 INCH
SIT1552AC-JE-DCC-32.768E	Sitime	LVCMOS	SURFACE MOUNT		5 %	NO	1 PPM/FIRST YEAR		3.63 V	15 pF				200 ms	1.54mm x 0.84mm x 0.6mm	1.5 V	70 Cel	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	.032768 MHz	200 ns	52/48	TR	e1
SIT1552AI-JE-DCC-32.768D	Sitime	LVCMOS	SURFACE MOUNT		5 %	NO	1 PPM/FIRST YEAR		3.63 V	15 pF				200 ms	1.54mm x 0.84mm x 0.6mm	1.5 V	85 Cel	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	.032768 MHz	200 ns	52/48	TR	e1
AST3TQ53-T-20.000MHZ-5-C	Abracon	CMOS	SURFACE MOUNT	4	.05 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF	10 mA	3.3 V	DILCC4,.12,154	6 ms	5mm x 3.2mm x 2mm	3.135 V	85 Cel	-40 Cel		20 MHz	6 ns	55/45
SIT5356AI-FQ-33E0-10.000000X	Sitime	LVCMOS	SURFACE MOUNT	10	.1 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V	15 pF		3.3 V	LCC10,.12X.2,53/47/43	1.9 ms	5.15mm x 3.35mm x 1.06mm	2.97 V	85 Cel	-40 Cel		10 MHz	1.9 ns	55/45	ENABLE/DISABLE FUNCTION
SIT5356AI-FQ-33E0-25.000000X	Sitime	LVCMOS	SURFACE MOUNT	10	.1 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V	15 pF		3.3 V	LCC10,.12X.2,53/47/43	1.9 ms	5.15mm x 3.35mm x 1.06mm	2.97 V	85 Cel	-40 Cel		25 MHz	1.9 ns	55/45	ENABLE/DISABLE FUNCTION
DS32KHZS	Maxim Integrated	CMOS	SURFACE MOUNT	16	7.5 %	NO	1 PPM/FIRST YEAR		5.5 V	15 pF	.22 mA	5 V	SOP16,.4	200 ms	10.46mm x 7.62mm x 2.67mm	4.5 V	70 Cel	0 Cel	Tin/Lead (Sn/Pb)	.032 MHz	60 ns	55/45		e0
DS32KHZS#	Analog Devices	CMOS	SURFACE MOUNT	16	7.5 %	NO	1 PPM/FIRST YEAR		5.5 V	15 pF	.22 mA	5 V	SOP16,.4	200 ms	10.46mm x 7.62mm x 2.67mm	4.5 V	70 Cel	0 Cel	Matte Tin (Sn) - annealed	.032 MHz	60 ns	55/45		e3
ASTMTXK-32.768KHZ-LG-T	Abracon	LVCMOS	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR		3.63 V	15 pF	.0015 mA		BGA4,2X2,40/16	200 ms	1.54mm x 0.84 mm x 0.6mm	1.5 V	85 Cel	-40 Cel		.032768 MHz	200 ns	52/48
SIT1552AI-JF-DCC-32.768D	Sitime	LVCMOS	SURFACE MOUNT		10 %	NO	1 PPM/FIRST YEAR		3.63 V	15 pF				200 ms	1.54mm x 0.84mm x 0.6mm	1.5 V	85 Cel	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	.032768 MHz	200 ns	52/48	TR	e1
SIT5156AI-FK-33E0-25.000000X	Sitime	LVCMOS	SURFACE MOUNT	10	.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V	15 pF		3.3 V	LCC10,.12X.2,53/47/43	1.9 ms	5.15mm x 3.35mm x 1.06mm	2.97 V	85 Cel	-40 Cel		25 MHz	1.9 ns	55/45	ENABLE/DISABLE FUNCTION
AST3TQ53-T-25.000MHZ-2-C	Abracon	CMOS	SURFACE MOUNT	4	.28 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF	10 mA	3.3 V	DILCC4,.12,154	6 ms	5mm x 3.2mm x 2mm	3.135 V	85 Cel	-40 Cel		25 MHz	6 ns	55/45
ASTMTXK-32.768KHZ-NJ-T10	Abracon	LVCMOS	SURFACE MOUNT	4	20 %	NO	1 PPM/FIRST YEAR		3.63 V	15 pF	.0015 mA		BGA4,2X2,40/16	200 ms	1.54mm x 0.84 mm x 0.6mm	1.5 V	70 Cel	0 Cel		.032768 MHz	200 ns	52/48
ASTMTXK-32.768KHZ-LG-T3	Abracon	LVCMOS	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR		3.63 V	15 pF	.0015 mA		BGA4,2X2,40/16	200 ms	1.54mm x 0.84 mm x 0.6mm	1.5 V	85 Cel	-40 Cel		.032768 MHz	200 ns	52/48
ASTMTXK-32.768KHZ-NG-T	Abracon	LVCMOS	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR		3.63 V	15 pF	.0015 mA		BGA4,2X2,40/16	200 ms	1.54mm x 0.84 mm x 0.6mm	1.5 V	70 Cel	0 Cel		.032768 MHz	200 ns	52/48
AST3TQ53-T-25.000MHZ-1-C	Abracon	CMOS	SURFACE MOUNT	4	.1 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF	10 mA	3.3 V	DILCC4,.12,154	6 ms	5mm x 3.2mm x 2mm	3.135 V	85 Cel	-40 Cel		25 MHz	6 ns	55/45
ASTMTXK-32.768KHZ-NJ-T	Abracon	LVCMOS	SURFACE MOUNT	4	20 %	NO	1 PPM/FIRST YEAR		3.63 V	15 pF	.0015 mA		BGA4,2X2,40/16	200 ms	1.54mm x 0.84 mm x 0.6mm	1.5 V	70 Cel	0 Cel		.032768 MHz	200 ns	52/48
SIT5356AI-FN-33E0-20.000000	Sitime	LVCMOS	SURFACE MOUNT	10	.25 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V	15 pF		3.3 V	LCC10,.12X.2,53/47/43	1.9 ms	5.15mm x 3.35mm x 1.06mm	2.97 V	85 Cel	-40 Cel		20 MHz	1.9 ns	55/45	ENABLE/DISABLE FUNCTION
ASTMTXK-32.768KHZ-LY-T3	Abracon	LVCMOS	SURFACE MOUNT	4	10 %	NO	1 PPM/FIRST YEAR		3.63 V	15 pF	.0015 mA		BGA4,2X2,40/16	200 ms	1.54mm x 0.84 mm x 0.6mm	1.5 V	85 Cel	-40 Cel		.032768 MHz	200 ns	52/48
AST3TQ53-T-25.000MHZ-5-C	Abracon	CMOS	SURFACE MOUNT	4	.05 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF	10 mA	3.3 V	DILCC4,.12,154	6 ms	5mm x 3.2mm x 2mm	3.135 V	85 Cel	-40 Cel		25 MHz	6 ns	55/45
SIT5356AE-FQ-33N0-48.000000Y	Sitime	LVCMOS	SURFACE MOUNT	10	.1 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V	15 pF		3.3 V	LCC10,.12X.2,53/47/43	1.9 ms	5.15mm x 3.35mm x 1.06mm	2.97 V	105 Cel	-40 Cel	GOLD OVER NICKEL	48 MHz	1.9 ns	55/45		e4
ASTMTXK-32.768KHZ-LJ-T10	Abracon	LVCMOS	SURFACE MOUNT	4	20 %	NO	1 PPM/FIRST YEAR		3.63 V	15 pF	.0015 mA		BGA4,2X2,40/16	200 ms	1.54mm x 0.84 mm x 0.6mm	1.5 V	85 Cel	-40 Cel		.032768 MHz	200 ns	52/48
ASTMTXK-32.768KHZ-NJ-T3	Abracon	LVCMOS	SURFACE MOUNT	4	20 %	NO	1 PPM/FIRST YEAR		3.63 V	15 pF	.0015 mA		BGA4,2X2,40/16	200 ms	1.54mm x 0.84 mm x 0.6mm	1.5 V	70 Cel	0 Cel		.032768 MHz	200 ns	52/48
AST3TQ53-T-20.000MHZ-2-C	Abracon	CMOS	SURFACE MOUNT	4	.28 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF	10 mA	3.3 V	DILCC4,.12,154	6 ms	5mm x 3.2mm x 2mm	3.135 V	85 Cel	-40 Cel		20 MHz	6 ns	55/45
ASTMTXK-32.768KHZ-LJ-T	Abracon	LVCMOS	SURFACE MOUNT	4	20 %	NO	1 PPM/FIRST YEAR		3.63 V	15 pF	.0015 mA		BGA4,2X2,40/16	200 ms	1.54mm x 0.84 mm x 0.6mm	1.5 V	85 Cel	-40 Cel		.032768 MHz	200 ns	52/48
ASTMTXK-32.768KHZ-LJ-T3	Abracon	LVCMOS	SURFACE MOUNT	4	20 %	NO	1 PPM/FIRST YEAR		3.63 V	15 pF	.0015 mA		BGA4,2X2,40/16	200 ms	1.54mm x 0.84 mm x 0.6mm	1.5 V	85 Cel	-40 Cel		.032768 MHz	200 ns	52/48
ASTMTXK-32.768KHZ-LY-T	Abracon	LVCMOS	SURFACE MOUNT	4	10 %	NO	1 PPM/FIRST YEAR		3.63 V	15 pF	.0015 mA		BGA4,2X2,40/16	200 ms	1.54mm x 0.84 mm x 0.6mm	1.5 V	85 Cel	-40 Cel		.032768 MHz	200 ns	52/48
SIT5156AE-FD-33E0-48.000000Y	Sitime	LVCMOS	SURFACE MOUNT	10	2.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V	15 pF		3.3 V	LCC10,.12X.2,53/47/43	1.9 ms	5.15mm x 3.35mm x 1.06mm	2.97 V	105 Cel	-40 Cel		48 MHz	1.9 ns	55/45	ENABLE/DISABLE FUNCTION
ASGTX-P-10.000MHZ-1-T	Abracon	LVPECL	SURFACE MOUNT	6	1 %	NO	1 PPM/FIRST YEAR		3.465 V			3.3 V		.35 ms	9.0mm x 7.0mm x 2.24mm	3.135 V	70 Cel	-30 Cel		10 MHz	.35 ns	55/45	COMPLEMENTARY OUTPUT; TR, 13 INCH
ASGTX-P-10.000MHZ-1-T2	Abracon	LVPECL	SURFACE MOUNT	6	1 %	NO	1 PPM/FIRST YEAR		3.465 V			3.3 V		.35 ms	9.0mm x 7.0mm x 2.24mm	3.135 V	70 Cel	-30 Cel		10 MHz	.35 ns	55/45	COMPLEMENTARY OUTPUT; TR
AST3TQ-T-16.384MHZ-50-C	Abracon	LVCMOS	SURFACE MOUNT	4	.05 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF		3.3 V		6 ms	7.0mm x 5.0mm x 1.9mm	3.135 V	85 Cel	-40 Cel		16.384 MHz	6 ns	55/45	BULK
AST3TQ-T-16.384MHZ-50-C-T5	Abracon	LVCMOS	SURFACE MOUNT	4	.05 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF		3.3 V		6 ms	7.0mm x 5.0mm x 1.9mm	3.135 V	85 Cel	-40 Cel		16.384 MHz	6 ns	55/45	TR, 13 INCH
AST3TQ-T-25.000MHZ-28	Abracon	LVCMOS	SURFACE MOUNT	4	.28 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF		3.3 V	DILCC4,.2,200	6 ms	7.0mm x 5.0mm x 1.9mm	3.135 V	85 Cel	-40 Cel		25 MHz	6 ns	55/45
AST3TQ-20.000MHZ-1-	Abracon	CMOS	SURFACE MOUNT	4	.1 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF		3.3 V	DILCC4,.2,200	4 ms	7.0mm x 5.0mm x 1.9mm	3.135 V	85 Cel	-40 Cel		20 MHz	4 ns	55/45
AST3TQ-20.000MHZ-2-	Abracon	CMOS	SURFACE MOUNT	4	.28 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF		3.3 V	DILCC4,.2,200	4 ms	7.0mm x 5.0mm x 1.9mm	3.135 V	90 Cel	-50 Cel		20 MHz	4 ns	55/45
AST3TQ-20.000MHZ-5-	Abracon	CMOS	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF		3.3 V	DILCC4,.2,200	4 ms	7.0mm x 5.0mm x 1.9mm	3.135 V	95 Cel	-55 Cel		20 MHz	4 ns	55/45
AST3TQ53-T-20.000MHZ-1-C	Abracon	CMOS	SURFACE MOUNT	4	.1 %	NO	1 PPM/FIRST YEAR		3.465 V	15 pF	10 mA	3.3 V	DILCC4,.12,154	6 ms	5mm x 3.2mm x 2mm	3.135 V	85 Cel	-40 Cel		20 MHz	6 ns	55/45
DS32KHZN/DIP	Maxim Integrated	CMOS	THROUGH HOLE MOUNT	14	7.5 %	NO	1 PPM/FIRST YEAR		5.5 V	15 pF	.22 mA	5 V	DIP16,.3	200 ms	21.84mm x 11.68mm x 8.01mm	4.5 V	85 Cel	-40 Cel	Matte Tin (Sn) - annealed	.032 MHz	60 ns	55/45		e3
SIT5356AE-FQ-33E0-50.000000	Sitime	LVCMOS	SURFACE MOUNT	10	.1 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V	15 pF		3.3 V	LCC10,.12X.2,53/47/43	1.9 ms	5.15mm x 3.35mm x 1.06mm	2.97 V	105 Cel	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	50 MHz	1.9 ns	55/45	ENABLE/DISABLE FUNCTION	e4
SIT5356AE-FQ-33E0-50.000000F	Sitime	LVCMOS	SURFACE MOUNT	10	.1 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V	15 pF		3.3 V	LCC10,.12X.2,53/47/43	1.9 ms	5.15mm x 3.35mm x 1.06mm	2.97 V	105 Cel	-40 Cel		50 MHz	1.9 ns	55/45	ENABLE/DISABLE FUNCTION
SIT5356AE-FQ-33E0-50.000000X	Sitime	LVCMOS	SURFACE MOUNT	10	.1 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V	15 pF		3.3 V	LCC10,.12X.2,53/47/43	1.9 ms	5.15mm x 3.35mm x 1.06mm	2.97 V	105 Cel	-40 Cel		50 MHz	1.9 ns	55/45	ENABLE/DISABLE FUNCTION

TCXO Clock Oscillators

TCXO (Temperature Compensated Crystal Oscillator) clock oscillators are electronic devices that generate a stable clock signal for use in various applications, such as communication systems, test and measurement equipment, and timing circuits. They use a crystal oscillator as a frequency reference and a temperature compensation circuit to stabilize the oscillator frequency.

The TCXO clock oscillator works by using a temperature compensation circuit to adjust the frequency of the crystal oscillator, compensating for changes in temperature that can affect the oscillator frequency. This results in a stable and accurate clock signal output.

One of the advantages of TCXO clock oscillators is their high stability and accuracy over a wide temperature range. They can generate clock signals with very low frequency drift and jitter, making them ideal for use in applications that require precise timing.

Another advantage of TCXO clock oscillators is their low phase noise and wide frequency range. They can generate clock signals at frequencies ranging from a few kilohertz to hundreds of megahertz, and have very low phase noise, making them suitable for use in high-precision applications.