Part | RoHS | Manufacturer | Oscillator Type | Mounting Feature | No. of Terminals | Frequency Stability | Frequency Adjustment (Mechanical) | Aging | Package Body Material | Maximum Supply Voltage | Technology | Output Load | Maximum Supply Current | Nominal Supply Voltage | Power Supplies (V) | Package Equivalence Code | Maximum Rise Time | Sub-Category | Physical Dimension | Minimum Supply Voltage | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Nominal Operating Frequency | Maximum Fall Time | Maximum Symmetry (%) | Manufacturer Series | Qualification | Maximum Output Low Current | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Abracon |
CMOS |
SURFACE MOUNT |
4 |
.1 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
3.3 V |
DILCC4,.2,200 |
4 ms |
7.0mm x 5.0mm x 1.9mm |
3.135 V |
85 Cel |
-40 Cel |
40 MHz |
4 ns |
55/45 |
||||||||||||||
|
Abracon |
CMOS |
SURFACE MOUNT |
4 |
.05 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
10 mA |
3.3 V |
DILCC4,.12,154 |
6 ms |
5mm x 3.2mm x 2mm |
3.135 V |
85 Cel |
-40 Cel |
10 MHz |
6 ns |
55/45 |
|||||||||||||
|
Abracon |
HCMOS |
SURFACE MOUNT |
4 |
2.5 % |
NO |
1 PPM/FIRST YEAR |
CERAMIC |
3.63 V |
15 pF |
4.8 mA |
3.3 V |
3.3 |
DILCC4,.08,65 |
5 ms |
Other Oscillators |
2.5mm x 2.0mm x 0.9mm |
2.97 V |
75 Cel |
-30 Cel |
12 MHz |
5 ns |
55/45 |
Not Qualified |
STANDBY; TRI-STATE; ENABLE/DISABLE FUNCTION; TR, 7 INCH |
.675 MHz |
55 MHz |
||||||
|
Abracon |
CMOS |
SURFACE MOUNT |
4 |
.28 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
4 mA |
3.3 V |
DILCC4,.2,200 |
4 ms |
7.0mm x 5.0mm x 1.9mm |
3.135 V |
90 Cel |
-50 Cel |
10 MHz |
4 ns |
55/45 |
|||||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
.05 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
3.3 V |
6 ms |
7.0mm x 5.0mm x 1.9mm |
3.135 V |
85 Cel |
-40 Cel |
40 MHz |
6 ns |
55/45 |
BULK |
||||||||||||||
|
Abracon |
CMOS |
SURFACE MOUNT |
4 |
.1 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
10 mA |
3.3 V |
DILCC4,.12,154 |
6 ms |
5mm x 3.2mm x 2mm |
3.135 V |
85 Cel |
-40 Cel |
40 MHz |
6 ns |
55/45 |
|||||||||||||
|
Abracon |
LVPECL |
SURFACE MOUNT |
6 |
1 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
3.3 V |
.35 ms |
9.0mm x 7.0mm x 2.24mm |
3.135 V |
70 Cel |
-30 Cel |
125 MHz |
.35 ns |
55/45 |
COMPLEMENTARY OUTPUT; BULK |
|||||||||||||||
|
Abracon |
LVPECL |
SURFACE MOUNT |
6 |
1 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
3.3 V |
.35 ms |
9.0mm x 7.0mm x 2.24mm |
3.135 V |
70 Cel |
-30 Cel |
125 MHz |
.35 ns |
55/45 |
COMPLEMENTARY OUTPUT; TR, 13 INCH |
|||||||||||||||
|
Abracon |
CMOS |
SURFACE MOUNT |
4 |
.5 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
3.3 V |
DILCC4,.2,200 |
4 ms |
7.0mm x 5.0mm x 1.9mm |
3.135 V |
95 Cel |
-55 Cel |
25 MHz |
4 ns |
55/45 |
||||||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
.05 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
3.3 V |
6 ms |
7.0mm x 5.0mm x 1.9mm |
3.135 V |
85 Cel |
-40 Cel |
10 MHz |
6 ns |
55/45 |
BULK |
||||||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
5 |
.28 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
3.3 V |
6 ms |
14.2mm x 9.15mm x 3.0mm |
3.136 V |
85 Cel |
-40 Cel |
19.44 MHz |
6 ns |
55/45 |
DUAL O/P IS AVAILABLE; TAPE |
||||||||||||||
|
Abracon |
LVPECL |
SURFACE MOUNT |
6 |
2 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
3.3 V |
.35 ms |
9.0mm x 7.0mm x 2.24mm |
3.135 V |
85 Cel |
-40 Cel |
500 MHz |
.35 ns |
55/45 |
COMPLEMENTARY OUTPUT; BULK |
|||||||||||||||
|
Abracon |
CMOS |
SURFACE MOUNT |
4 |
.5 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
3.3 V |
DILCC4,.2,200 |
4 ms |
7.0mm x 5.0mm x 1.9mm |
3.135 V |
95 Cel |
-55 Cel |
19.2 MHz |
4 ns |
55/45 |
||||||||||||||
|
Abracon |
CMOS |
SURFACE MOUNT |
4 |
.28 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
3.3 V |
DILCC4,.2,200 |
4 ms |
7.0mm x 5.0mm x 1.9mm |
3.135 V |
90 Cel |
-50 Cel |
40 MHz |
4 ns |
55/45 |
||||||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
.05 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
3.3 V |
6 ms |
7.0mm x 5.0mm x 1.9mm |
3.135 V |
85 Cel |
-40 Cel |
40 MHz |
6 ns |
55/45 |
TR, 13 INCH |
||||||||||||||
|
Abracon |
CMOS |
SURFACE MOUNT |
4 |
.28 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
10 mA |
3.3 V |
DILCC4,.12,154 |
6 ms |
5mm x 3.2mm x 2mm |
3.135 V |
85 Cel |
-40 Cel |
10 MHz |
6 ns |
55/45 |
|||||||||||||
|
Abracon |
HCMOS |
SURFACE MOUNT |
4 |
2.5 % |
NO |
1 PPM/FIRST YEAR |
CERAMIC |
3.63 V |
15 pF |
4.8 mA |
3.3 V |
3.3 |
DILCC4,.08,65 |
5 ms |
Other Oscillators |
2.5mm x 2.0mm x 0.9mm |
2.97 V |
75 Cel |
-30 Cel |
20 MHz |
5 ns |
55/45 |
Not Qualified |
STANDBY; TRI-STATE; ENABLE/DISABLE FUNCTION; TR, 7 INCH |
.675 MHz |
55 MHz |
||||||
|
Cts |
HCMOS |
SURFACE MOUNT |
10 |
.1 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
10 mA |
3.3 V |
LCC10,.12X.2,50/40 |
8 ms |
5mm x 3.2mm x 2mm |
3.135 V |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
10 MHz |
8 ns |
55/45 |
e4 |
|||||||||||
|
Cts |
HCMOS |
SURFACE MOUNT |
10 |
.5 % |
NO |
1 PPM/FIRST YEAR |
3.47 V |
15 pF |
10 mA |
3.3 V |
LCC10,.12X.2,47 |
8 ms |
5mm x 3.2mm x 2mm |
3.14 V |
105 Cel |
-40 Cel |
Gold Flash (Au) - with Nickel (Ni) barrier |
10 MHz |
8 ns |
55/45 |
||||||||||||
|
Cts |
HCMOS |
SURFACE MOUNT |
1 % |
NO |
1 PPM/FIRST YEAR |
5.25 V |
15 pF |
5 V |
8 ms |
7.0mm x 5.0mm x 2.1mm |
4.75 V |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
2.4576 MHz |
8 ns |
55/45 |
TR, 7 INCH |
e4 |
|||||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
.05 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
3.3 V |
6 ms |
7.0mm x 5.0mm x 1.9mm |
3.135 V |
85 Cel |
-40 Cel |
10 MHz |
6 ns |
55/45 |
TR, 13 INCH |
||||||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
.28 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
3.3 V |
DILCC4,.2,200 |
6 ms |
7.0mm x 5.0mm x 1.9mm |
3.135 V |
85 Cel |
-40 Cel |
16.384 MHz |
6 ns |
55/45 |
||||||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
.28 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
3.3 V |
DILCC4,.2,200 |
6 ms |
7.0mm x 5.0mm x 1.9mm |
3.135 V |
85 Cel |
-40 Cel |
16.384 MHz |
6 ns |
55/45 |
||||||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
.28 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
3.3 V |
DILCC4,.2,200 |
6 ms |
7.0mm x 5.0mm x 1.9mm |
3.135 V |
85 Cel |
-40 Cel |
30.72 MHz |
6 ns |
55/45 |
||||||||||||||
|
Abracon |
HCMOS |
SURFACE MOUNT |
4 |
2.5 % |
NO |
1 PPM/FIRST YEAR |
CERAMIC |
3.63 V |
15 pF |
4 mA |
3.3 V |
3.3 |
DILCC4,.08,65 |
5 ms |
Other Oscillators |
2.5mm x 2.0mm x 0.9mm |
2.97 V |
75 Cel |
-30 Cel |
10 MHz |
5 ns |
55/45 |
Not Qualified |
STANDBY; TRI-STATE; ENABLE/DISABLE FUNCTION; TR, 7 INCH |
.675 MHz |
55 MHz |
||||||
|
Sitime |
LVCMOS |
SURFACE MOUNT |
4 |
3 % |
NO |
1 PPM/FIRST YEAR |
1.98 V |
15 pF |
1.8 V |
20 ms |
1.54mm x 0.84mm x 0.6mm |
1.62 V |
70 Cel |
-20 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
.032768 MHz |
20 ns |
55/45 |
TR |
e1 |
||||||||||||
|
Sitime |
LVCMOS |
SURFACE MOUNT |
4 |
5 % |
NO |
1 PPM/FIRST YEAR |
1.98 V |
15 pF |
1.8 V |
20 ms |
1.54mm x 0.84mm x 0.6mm |
1.62 V |
85 Cel |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
.032768 MHz |
20 ns |
55/45 |
TR |
e1 |
||||||||||||
|
Sitime |
LVCMOS |
SURFACE MOUNT |
4 |
5 % |
NO |
1 PPM/FIRST YEAR |
15 pF |
3.3 V |
20 ms |
1.54mm x 0.84mm x 0.6mm |
85 Cel |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
.032768 MHz |
20 ns |
55/45 |
TR |
e1 |
||||||||||||||
|
Sitime |
LVCMOS |
SURFACE MOUNT |
10 |
.1 % |
NO |
1 PPM/FIRST YEAR |
CERAMIC |
3.63 V |
15 pF |
3.3 V |
LCC10,.12X.2,53/47/43 |
1.9 ms |
5.15mm x 3.35mm x 1.06mm |
2.97 V |
85 Cel |
-40 Cel |
25 MHz |
1.9 ns |
55/45 |
ENABLE/DISABLE FUNCTION |
||||||||||||
|
Sitime |
LVCMOS |
SURFACE MOUNT |
10 |
.1 % |
NO |
1 PPM/FIRST YEAR |
CERAMIC |
3.63 V |
15 pF |
3.3 V |
LCC10,.12X.2,53/47/43 |
1.9 ms |
5.15mm x 3.35mm x 1.06mm |
2.97 V |
85 Cel |
-40 Cel |
GOLD OVER NICKEL |
10 MHz |
1.9 ns |
55/45 |
e4 |
|||||||||||
|
Microchip Technology |
HCMOS |
SURFACE MOUNT |
8 |
1 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
3.3 V |
5 ms |
7.24mm x 5.21mm x 3.05mm |
3.135 V |
85 Cel |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
20 MHz |
5 ns |
60/40 |
ENABLE/DISABLE FUNCTION; TR, 7 INCH |
e4 |
||||||||||||
|
Microchip Technology |
HCMOS |
SURFACE MOUNT |
8 |
1 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
3.3 V |
5 ms |
7.24mm x 5.21mm x 3.05mm |
3.135 V |
85 Cel |
-40 Cel |
50 MHz |
5 ns |
60/40 |
ENABLE/DISABLE FUNCTION; TR, 7 INCH |
||||||||||||||
Microchip Technology |
CMOS |
SURFACE MOUNT |
4 |
2 % |
NO |
1 PPM/FIRST YEAR |
CERAMIC |
3.465 V |
15 pF |
6 mA |
3.3 V |
DILCC4,.2,200 |
4 ms |
7.0mm x 5.0mm x 1.9mm |
3.135 V |
85 Cel |
-40 Cel |
13 MHz |
4 ns |
55/45 |
TR, 7 INCH |
||||||||||||
|
Analog Devices |
CMOS |
SURFACE MOUNT |
16 |
1 % |
NO |
1 PPM/FIRST YEAR |
PLASTIC/EPOXY |
3.465 V |
CMOS |
2.5 mA |
3.3 V |
3.3 |
SOP16,.4 |
2 ms |
Other Oscillators |
3.135 V |
70 Cel |
0 Cel |
16.8 MHz |
2 ns |
55/45 |
Not Qualified |
2 Amp |
10 MHz |
51.84 MHz |
|||||||
|
Analog Devices |
CMOS |
SURFACE MOUNT |
16 |
1 % |
NO |
1 PPM/FIRST YEAR |
PLASTIC/EPOXY |
3.465 V |
CMOS |
2.5 mA |
3.3 V |
3.3 |
SOP16,.4 |
2 ms |
Other Oscillators |
3.135 V |
70 Cel |
0 Cel |
24 MHz |
2 ns |
55/45 |
Not Qualified |
2 Amp |
10 MHz |
51.84 MHz |
|||||||
|
Maxim Integrated |
CMOS |
SURFACE MOUNT |
16 |
1 % |
NO |
1 PPM/FIRST YEAR |
PLASTIC/EPOXY |
3.465 V |
CMOS |
2.5 mA |
3.3 V |
3.3 |
SOP16,.4 |
2 ms |
Other Oscillators |
3.135 V |
70 Cel |
0 Cel |
16.384 MHz |
2 ns |
55/45 |
DS4026 |
Not Qualified |
2 Amp |
10 MHz |
51.84 MHz |
||||||
|
Maxim Integrated |
CMOS |
SURFACE MOUNT |
16 |
1 % |
NO |
1 PPM/FIRST YEAR |
PLASTIC/EPOXY |
3.465 V |
CMOS |
2.5 mA |
3.3 V |
3.3 |
SOP16,.4 |
2 ms |
Other Oscillators |
3.135 V |
85 Cel |
-40 Cel |
10 MHz |
2 ns |
55/45 |
DS4026 |
Not Qualified |
2 Amp |
10 MHz |
51.84 MHz |
||||||
|
Maxim Integrated |
CMOS |
SURFACE MOUNT |
16 |
1 % |
NO |
1 PPM/FIRST YEAR |
PLASTIC/EPOXY |
3.465 V |
CMOS |
2.5 mA |
3.3 V |
3.3 |
SOP16,.4 |
2 ms |
Other Oscillators |
3.135 V |
85 Cel |
-40 Cel |
19.44 MHz |
2 ns |
55/45 |
DS4026 |
Not Qualified |
2 Amp |
10 MHz |
51.84 MHz |
||||||
|
Maxim Integrated |
CMOS |
SURFACE MOUNT |
16 |
1 % |
NO |
1 PPM/FIRST YEAR |
PLASTIC/EPOXY |
3.465 V |
CMOS |
2.5 mA |
3.3 V |
3.3 |
SOP16,.4 |
2 ms |
Other Oscillators |
3.135 V |
85 Cel |
-40 Cel |
16.8 MHz |
2 ns |
55/45 |
DS4026 |
Not Qualified |
2 Amp |
10 MHz |
51.84 MHz |
||||||
|
Maxim Integrated |
CMOS |
SURFACE MOUNT |
16 |
1 % |
NO |
1 PPM/FIRST YEAR |
PLASTIC/EPOXY |
3.465 V |
CMOS |
2.5 mA |
3.3 V |
3.3 |
SOP16,.4 |
2 ms |
Other Oscillators |
3.135 V |
70 Cel |
0 Cel |
10 MHz |
2 ns |
55/45 |
DS4026 |
Not Qualified |
2 Amp |
10 MHz |
51.84 MHz |
||||||
|
Maxim Integrated |
CMOS |
SURFACE MOUNT |
16 |
1 % |
NO |
1 PPM/FIRST YEAR |
PLASTIC/EPOXY |
3.465 V |
CMOS |
2.5 mA |
3.3 V |
3.3 |
SOP16,.4 |
2 ms |
Other Oscillators |
3.135 V |
85 Cel |
-40 Cel |
24 MHz |
2 ns |
55/45 |
DS4026 |
Not Qualified |
2 Amp |
10 MHz |
51.84 MHz |
||||||
|
Maxim Integrated |
CMOS |
SURFACE MOUNT |
16 |
1 % |
NO |
1 PPM/FIRST YEAR |
PLASTIC/EPOXY |
3.465 V |
CMOS |
2.5 mA |
3.3 V |
3.3 |
SOP16,.4 |
2 ms |
Other Oscillators |
3.135 V |
70 Cel |
0 Cel |
20 MHz |
2 ns |
55/45 |
DS4026 |
Not Qualified |
2 Amp |
10 MHz |
51.84 MHz |
||||||
|
Maxim Integrated |
CMOS |
SURFACE MOUNT |
16 |
1 % |
NO |
1 PPM/FIRST YEAR |
PLASTIC/EPOXY |
3.465 V |
CMOS |
2.5 mA |
3.3 V |
3.3 |
SOP16,.4 |
2 ms |
Other Oscillators |
3.135 V |
85 Cel |
-40 Cel |
20 MHz |
2 ns |
55/45 |
DS4026 |
Not Qualified |
2 Amp |
10 MHz |
51.84 MHz |
||||||
|
Maxim Integrated |
CMOS |
SURFACE MOUNT |
16 |
1 % |
NO |
1 PPM/FIRST YEAR |
PLASTIC/EPOXY |
3.465 V |
CMOS |
2.5 mA |
3.3 V |
3.3 |
SOP16,.4 |
2 ms |
Other Oscillators |
3.135 V |
70 Cel |
0 Cel |
Tin (Sn) |
38.88 MHz |
2 ns |
55/45 |
DS4026 |
Not Qualified |
2 Amp |
e3 |
10 MHz |
51.84 MHz |
||||
|
Maxim Integrated |
CMOS |
SURFACE MOUNT |
16 |
1 % |
NO |
1 PPM/FIRST YEAR |
PLASTIC/EPOXY |
3.465 V |
CMOS |
2.5 mA |
3.3 V |
3.3 |
SOP16,.4 |
2 ms |
Other Oscillators |
3.135 V |
85 Cel |
-40 Cel |
19.2 MHz |
2 ns |
55/45 |
DS4026 |
Not Qualified |
2 Amp |
10 MHz |
51.84 MHz |
||||||
|
Maxim Integrated |
CMOS |
SURFACE MOUNT |
16 |
1 % |
NO |
1 PPM/FIRST YEAR |
PLASTIC/EPOXY |
3.465 V |
CMOS |
2.5 mA |
3.3 V |
3.3 |
SOP16,.4 |
2 ms |
Other Oscillators |
3.135 V |
70 Cel |
0 Cel |
12.8 MHz |
2 ns |
55/45 |
DS4026 |
Not Qualified |
2 Amp |
10 MHz |
51.84 MHz |
||||||
|
Maxim Integrated |
CMOS |
SURFACE MOUNT |
16 |
1 % |
NO |
1 PPM/FIRST YEAR |
PLASTIC/EPOXY |
3.465 V |
CMOS |
2.5 mA |
3.3 V |
3.3 |
SOP16,.4 |
2 ms |
Other Oscillators |
3.135 V |
85 Cel |
-40 Cel |
20 MHz |
2 ns |
55/45 |
DS4026 |
Not Qualified |
2 Amp |
10 MHz |
51.84 MHz |
||||||
|
Maxim Integrated |
CMOS |
SURFACE MOUNT |
16 |
1 % |
NO |
1 PPM/FIRST YEAR |
PLASTIC/EPOXY |
3.465 V |
CMOS |
2.5 mA |
3.3 V |
3.3 |
SOP16,.4 |
2 ms |
Other Oscillators |
3.135 V |
85 Cel |
-40 Cel |
Matte Tin (Sn) |
51.84 MHz |
2 ns |
55/45 |
DS4026 |
Not Qualified |
2 Amp |
e3 |
10 MHz |
51.84 MHz |
TCXO (Temperature Compensated Crystal Oscillator) clock oscillators are electronic devices that generate a stable clock signal for use in various applications, such as communication systems, test and measurement equipment, and timing circuits. They use a crystal oscillator as a frequency reference and a temperature compensation circuit to stabilize the oscillator frequency.
The TCXO clock oscillator works by using a temperature compensation circuit to adjust the frequency of the crystal oscillator, compensating for changes in temperature that can affect the oscillator frequency. This results in a stable and accurate clock signal output.
One of the advantages of TCXO clock oscillators is their high stability and accuracy over a wide temperature range. They can generate clock signals with very low frequency drift and jitter, making them ideal for use in applications that require precise timing.
Another advantage of TCXO clock oscillators is their low phase noise and wide frequency range. They can generate clock signals at frequencies ranging from a few kilohertz to hundreds of megahertz, and have very low phase noise, making them suitable for use in high-precision applications.