Part | RoHS | Manufacturer | Oscillator Type | Mounting Feature | No. of Terminals | Frequency Stability | Frequency Adjustment (Mechanical) | Aging | Package Body Material | Maximum Supply Voltage | Technology | Output Load | Maximum Supply Current | Nominal Supply Voltage | Power Supplies (V) | Package Equivalence Code | Maximum Rise Time | Sub-Category | Physical Dimension | Minimum Supply Voltage | Maximum Operating Temperature | Minimum Operating Temperature | Terminal Finish | Nominal Operating Frequency | Maximum Fall Time | Maximum Symmetry (%) | Manufacturer Series | Qualification | Maximum Output Low Current | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
.28 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
7 mA |
3.3 V |
DILCC4,.2,200 |
6 ms |
7.0mm x 5.0mm x 1.9mm |
3.135 V |
85 Cel |
-40 Cel |
40 MHz |
6 ns |
55/45 |
|||||||||||||
|
Sitime |
LVCMOS |
SURFACE MOUNT |
5 % |
NO |
1 PPM/FIRST YEAR |
3.63 V |
15 pF |
200 ms |
1.54mm x 0.84mm x 0.6mm |
1.5 V |
85 Cel |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
.032768 MHz |
200 ns |
52/48 |
TR |
e1 |
||||||||||||||
Maxim Integrated |
CMOS |
SURFACE MOUNT |
16 |
7.5 % |
NO |
1 PPM/FIRST YEAR |
5.5 V |
15 pF |
.22 mA |
5 V |
SOP16,.4 |
200 ms |
10.46mm x 7.62mm x 2.67mm |
4.5 V |
85 Cel |
-40 Cel |
Tin/Lead (Sn/Pb) |
.032 MHz |
60 ns |
55/45 |
e0 |
||||||||||||
|
Analog Devices |
CMOS |
SURFACE MOUNT |
16 |
7.5 % |
NO |
1 PPM/FIRST YEAR |
5.5 V |
15 pF |
.22 mA |
5 V |
SOP16,.4 |
200 ms |
10.46mm x 7.62mm x 2.67mm |
4.5 V |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
.032 MHz |
60 ns |
55/45 |
e3 |
|||||||||||
|
Abracon |
HCMOS |
SURFACE MOUNT |
4 |
2.5 % |
NO |
1 PPM/YEAR |
3.465 V |
15 pF |
6 mA |
3.3 V |
LCC4,.12X.2,146/90 |
10 ms |
5.0mm x 3.2mm x 1.5mm |
3.135 V |
85 Cel |
-30 Cel |
GOLD OVER NICKEL |
25 MHz |
10 ns |
60/40 |
e4 |
|||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
.28 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
7 mA |
3.3 V |
DILCC4,.2,200 |
6 ms |
7.0mm x 5.0mm x 1.9mm |
3.135 V |
85 Cel |
-40 Cel |
40 MHz |
6 ns |
55/45 |
|||||||||||||
|
Sitime |
LVCMOS |
SURFACE MOUNT |
10 % |
NO |
1 PPM/FIRST YEAR |
3.63 V |
15 pF |
200 ms |
1.54mm x 0.84mm x 0.6mm |
1.5 V |
85 Cel |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
.032768 MHz |
200 ns |
52/48 |
TR |
e1 |
||||||||||||||
|
Ecs International |
HCMOS |
SURFACE MOUNT |
4 |
2.5 % |
NO |
1 PPM/YEAR |
CERAMIC |
3.465 V |
15 pF |
5.5 mA |
3.3 V |
LCC4,.08X.1,68/52 |
5 ms |
2.5mm x 2.0mm x 0.9mm |
3.135 V |
85 Cel |
-40 Cel |
Gold (Au) |
25 MHz |
5 ns |
45/55 |
TRI-STATE; ENABLE/DISABLE FUNCTION |
e4 |
|||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
.28 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
7 mA |
3.3 V |
DILCC4,.2,200 |
6 ms |
7.0mm x 5.0mm x 1.9mm |
3.135 V |
85 Cel |
-40 Cel |
40 MHz |
6 ns |
55/45 |
|||||||||||||
|
Abracon |
CMOS |
SURFACE MOUNT |
6 |
3 % |
NO |
1 PPM/YEAR |
3.465 V |
15 pF |
3.3 V |
3 ms |
3.2mm x 2.5mm x 1.7mm |
3.135 V |
85 Cel |
-40 Cel |
NICKEL GOLD |
65.536 MHz |
3 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TAPE AND REEL |
e4 |
||||||||||||
|
Jauch Quartz |
HCMOS |
SURFACE MOUNT |
2.5 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
3.3 V |
5 ms |
3.2mm x 2.5mm x 1.0mm |
3.135 V |
85 Cel |
-40 Cel |
26 MHz |
5 ns |
55/45 |
ENABLE/DISABLE FUNCTION; BULK; TR, 7 INCH |
|||||||||||||||
|
Sitime |
LVCMOS |
SURFACE MOUNT |
5 % |
NO |
1 PPM/FIRST YEAR |
3.63 V |
15 pF |
200 ms |
1.54mm x 0.84mm x 0.6mm |
1.5 V |
70 Cel |
0 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
.032768 MHz |
200 ns |
52/48 |
TR |
e1 |
||||||||||||||
|
Sitime |
LVCMOS |
SURFACE MOUNT |
5 % |
NO |
1 PPM/FIRST YEAR |
3.63 V |
15 pF |
200 ms |
1.54mm x 0.84mm x 0.6mm |
1.5 V |
85 Cel |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
.032768 MHz |
200 ns |
52/48 |
TR |
e1 |
||||||||||||||
|
Abracon |
CMOS |
SURFACE MOUNT |
4 |
.05 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
10 mA |
3.3 V |
DILCC4,.12,154 |
6 ms |
5mm x 3.2mm x 2mm |
3.135 V |
85 Cel |
-40 Cel |
20 MHz |
6 ns |
55/45 |
|||||||||||||
|
Sitime |
LVCMOS |
SURFACE MOUNT |
4 |
5 % |
NO |
2.5 PPM/FIRST YEAR |
3.63 V |
15 pF |
33 mA |
3.3 V |
DILCC4,.1,83 |
5 ms |
3.2mm x 2.5mm x 0.75mm |
2.97 V |
85 Cel |
-40 Cel |
40 MHz |
5 ns |
55/45 |
|||||||||||||
|
Sitime |
LVCMOS |
SURFACE MOUNT |
10 |
.1 % |
NO |
1 PPM/FIRST YEAR |
CERAMIC |
3.63 V |
15 pF |
3.3 V |
LCC10,.12X.2,53/47/43 |
1.9 ms |
5.15mm x 3.35mm x 1.06mm |
2.97 V |
85 Cel |
-40 Cel |
10 MHz |
1.9 ns |
55/45 |
ENABLE/DISABLE FUNCTION |
||||||||||||
|
Txc |
CMOS |
SURFACE MOUNT |
6 |
.28 % |
NO |
1 PPM/YEAR |
15 pF |
10 mA |
3.3 V |
LCC6(UNSPEC) |
5.0mm x 3.2mm x 1.5mm |
85 Cel |
-40 Cel |
25 MHz |
ENABLE/DISABLE FUNCTION |
|||||||||||||||||
|
Fox Electronics |
HCMOS |
SURFACE MOUNT |
4 |
2.5 % |
NO |
1 PPM/YEAR |
3.465 V |
15 pF |
3.3 V |
5.0mm x 3.2mm x 1.5mm |
3.135 V |
85 Cel |
-30 Cel |
20 MHz |
TR, 10 INCH |
|||||||||||||||||
|
Sitime |
LVCMOS |
SURFACE MOUNT |
10 |
.1 % |
NO |
1 PPM/FIRST YEAR |
CERAMIC |
3.63 V |
15 pF |
3.3 V |
LCC10,.12X.2,53/47/43 |
1.9 ms |
5.15mm x 3.35mm x 1.06mm |
2.97 V |
85 Cel |
-40 Cel |
25 MHz |
1.9 ns |
55/45 |
ENABLE/DISABLE FUNCTION |
||||||||||||
Maxim Integrated |
CMOS |
SURFACE MOUNT |
16 |
7.5 % |
NO |
1 PPM/FIRST YEAR |
5.5 V |
15 pF |
.22 mA |
5 V |
SOP16,.4 |
200 ms |
10.46mm x 7.62mm x 2.67mm |
4.5 V |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
.032 MHz |
60 ns |
55/45 |
e0 |
||||||||||||
|
Analog Devices |
CMOS |
SURFACE MOUNT |
16 |
7.5 % |
NO |
1 PPM/FIRST YEAR |
5.5 V |
15 pF |
.22 mA |
5 V |
SOP16,.4 |
200 ms |
10.46mm x 7.62mm x 2.67mm |
4.5 V |
70 Cel |
0 Cel |
Matte Tin (Sn) - annealed |
.032 MHz |
60 ns |
55/45 |
e3 |
|||||||||||
|
Fox Electronics |
HCMOS |
SURFACE MOUNT |
4 |
2.5 % |
NO |
1 PPM/YEAR |
3.465 V |
15 pF |
3.3 V |
5.0mm x 3.2mm x 1.5mm |
3.135 V |
85 Cel |
-30 Cel |
20 MHz |
TR, 10 INCH |
|||||||||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
5 % |
NO |
1 PPM/FIRST YEAR |
3.63 V |
15 pF |
.0015 mA |
BGA4,2X2,40/16 |
200 ms |
1.54mm x 0.84 mm x 0.6mm |
1.5 V |
85 Cel |
-40 Cel |
.032768 MHz |
200 ns |
52/48 |
||||||||||||||
|
Connor Winfield |
LVCMOS |
SURFACE MOUNT |
10 |
.28 % |
NO |
CERAMIC |
3.465 V |
15 pF |
6 mA |
3.3 V |
LCC10,.2X.27,100/50 |
8 ms |
7.0mm x 5.0mm x 2.0mm |
3.135 V |
70 Cel |
0 Cel |
10 MHz |
8 ns |
55/45 |
TRI-STATE; ENABLE/DISABLE FUNCTION |
||||||||||||
|
Sitime |
LVCMOS |
SURFACE MOUNT |
10 % |
NO |
1 PPM/FIRST YEAR |
3.63 V |
15 pF |
200 ms |
1.54mm x 0.84mm x 0.6mm |
1.5 V |
85 Cel |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
.032768 MHz |
200 ns |
52/48 |
TR |
e1 |
||||||||||||||
|
Sitime |
LVCMOS |
SURFACE MOUNT |
10 |
.5 % |
NO |
1 PPM/FIRST YEAR |
CERAMIC |
3.63 V |
15 pF |
3.3 V |
LCC10,.12X.2,53/47/43 |
1.9 ms |
5.15mm x 3.35mm x 1.06mm |
2.97 V |
85 Cel |
-40 Cel |
25 MHz |
1.9 ns |
55/45 |
ENABLE/DISABLE FUNCTION |
||||||||||||
|
Abracon |
CMOS |
SURFACE MOUNT |
4 |
.28 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
10 mA |
3.3 V |
DILCC4,.12,154 |
6 ms |
5mm x 3.2mm x 2mm |
3.135 V |
85 Cel |
-40 Cel |
25 MHz |
6 ns |
55/45 |
|||||||||||||
|
Sitime |
LVDS |
SURFACE MOUNT |
6 |
5 % |
NO |
2.5 PPM/FIRST YEAR |
PLASTIC/EPOXY |
3.63 V |
100 OHM |
55 mA |
3.3 V |
DILCC6,.2 |
.6 ms |
7.0mm x 5.0mm x 0.9mm |
2.97 V |
85 Cel |
-40 Cel |
100 MHz |
.6 ns |
55/45 |
ENABLE/DISABLE FUNCTION; COMPLEMENTARY OUTPUT |
|||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
20 % |
NO |
1 PPM/FIRST YEAR |
3.63 V |
15 pF |
.0015 mA |
BGA4,2X2,40/16 |
200 ms |
1.54mm x 0.84 mm x 0.6mm |
1.5 V |
70 Cel |
0 Cel |
.032768 MHz |
200 ns |
52/48 |
||||||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
5 % |
NO |
1 PPM/FIRST YEAR |
3.63 V |
15 pF |
.0015 mA |
BGA4,2X2,40/16 |
200 ms |
1.54mm x 0.84 mm x 0.6mm |
1.5 V |
85 Cel |
-40 Cel |
.032768 MHz |
200 ns |
52/48 |
||||||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
5 % |
NO |
1 PPM/FIRST YEAR |
3.63 V |
15 pF |
.0015 mA |
BGA4,2X2,40/16 |
200 ms |
1.54mm x 0.84 mm x 0.6mm |
1.5 V |
70 Cel |
0 Cel |
.032768 MHz |
200 ns |
52/48 |
||||||||||||||
|
Abracon |
CMOS |
SURFACE MOUNT |
4 |
.1 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
10 mA |
3.3 V |
DILCC4,.12,154 |
6 ms |
5mm x 3.2mm x 2mm |
3.135 V |
85 Cel |
-40 Cel |
25 MHz |
6 ns |
55/45 |
|||||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
20 % |
NO |
1 PPM/FIRST YEAR |
3.63 V |
15 pF |
.0015 mA |
BGA4,2X2,40/16 |
200 ms |
1.54mm x 0.84 mm x 0.6mm |
1.5 V |
70 Cel |
0 Cel |
.032768 MHz |
200 ns |
52/48 |
||||||||||||||
|
Sitime |
LVCMOS |
SURFACE MOUNT |
10 |
.25 % |
NO |
1 PPM/FIRST YEAR |
CERAMIC |
3.63 V |
15 pF |
3.3 V |
LCC10,.12X.2,53/47/43 |
1.9 ms |
5.15mm x 3.35mm x 1.06mm |
2.97 V |
85 Cel |
-40 Cel |
20 MHz |
1.9 ns |
55/45 |
ENABLE/DISABLE FUNCTION |
||||||||||||
|
Abracon |
LVCMOS |
SURFACE MOUNT |
4 |
10 % |
NO |
1 PPM/FIRST YEAR |
3.63 V |
15 pF |
.0015 mA |
BGA4,2X2,40/16 |
200 ms |
1.54mm x 0.84 mm x 0.6mm |
1.5 V |
85 Cel |
-40 Cel |
.032768 MHz |
200 ns |
52/48 |
||||||||||||||
|
Sitime |
LVCMOS |
SURFACE MOUNT |
10 |
.5 % |
NO |
1 PPM/YEAR |
CERAMIC |
3.63 V |
15 pF |
3.3 V |
LCC10,.12X.2,58/52/48 |
1.9 ms |
5.15mm x 3.35mm x 1.06mm |
2.97 V |
85 Cel |
-40 Cel |
10 MHz |
1.9 ns |
55/45 |
ENABLE/DISABLE FUNCTION; MIL-STD-883F |
||||||||||||
|
Ecs International |
HCMOS |
SURFACE MOUNT |
4 |
2.5 % |
NO |
1 PPM/YEAR |
CERAMIC |
3.465 V |
15 pF |
4.8 mA |
3.3 V |
LCC4,.08X.1,68/52 |
5 ms |
2.5mm x 2.0mm x 0.9mm |
3.135 V |
85 Cel |
-40 Cel |
Gold (Au) |
16 MHz |
5 ns |
45/55 |
TRI-STATE; ENABLE/DISABLE FUNCTION |
e4 |
|||||||||
|
Ecs International |
CMOS |
SURFACE MOUNT |
4 |
2.5 % |
NO |
1 PPM/YEAR |
CERAMIC |
3.6 V |
15 pF |
4 mA |
LCC4,.08X.1,68/52 |
5 ms |
2.5mm x 2mm x 0.9mm |
1.7 V |
85 Cel |
-40 Cel |
Gold (Au) |
10 MHz |
5 ns |
45/55 |
TRI-STATE; ENABLE/DISABLE FUNCTION |
e4 |
||||||||||
|
Fox Electronics |
HCMOS |
SURFACE MOUNT |
4 |
2.5 % |
NO |
1 PPM/YEAR |
3.465 V |
15 pF |
3.3 V |
5.0mm x 3.2mm x 1.5mm |
3.135 V |
85 Cel |
-30 Cel |
25 MHz |
TR, 10 INCH |
|||||||||||||||||
|
Connor Winfield |
LVCMOS |
SURFACE MOUNT |
10 |
.28 % |
NO |
3 PPM/TWENTY YEAR |
3.465 V |
15 pF |
3.3 V |
8 ms |
7.0mm x 5.0mm x 2.0mm |
3.135 V |
85 Cel |
-40 Cel |
25 MHz |
8 ns |
55/45 |
TRI-STATE; ENABLE/DISABLE FUNCTION; TAPE AND REEL |
||||||||||||||
|
Cts |
HCMOS |
SURFACE MOUNT |
8 |
.28 % |
NO |
3 PPM/20 YEAR |
CERAMIC |
3.465 V |
15 pF |
9.5 mA |
3.3 V |
6 ms |
5.0mm x 3.2mm x 2.0mm |
3.135 V |
85 Cel |
-40 Cel |
Gold Flash (Au) - with Nickel (Ni) barrier |
30.72 MHz |
6 ns |
55/45 |
||||||||||||
|
Fox Electronics |
HCMOS |
SURFACE MOUNT |
4 |
2.5 % |
NO |
1 PPM/YEAR |
3.465 V |
15 pF |
3.3 V |
5.0mm x 3.2mm x 1.5mm |
3.135 V |
85 Cel |
-30 Cel |
16 MHz |
TR, 10 INCH |
|||||||||||||||||
|
Sitime |
LVCMOS |
SURFACE MOUNT |
5 % |
NO |
2.5 PPM/FIRST YEAR |
3.63 V |
15 pF |
3.3 V |
2 ms |
3.2mm x 2.5mm x 0.75mm |
2.97 V |
85 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
48 MHz |
2 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
e4 |
|||||||||||||
|
Connor Winfield |
LVCMOS |
SURFACE MOUNT |
10 |
.28 % |
NO |
3 PPM/TWENTY YEAR |
3.465 V |
15 pF |
3.3 V |
8 ms |
7.0mm x 5.0mm x 2.0mm |
3.135 V |
85 Cel |
-40 Cel |
10 MHz |
8 ns |
55/45 |
TRI-STATE; ENABLE/DISABLE FUNCTION; TAPE AND REEL |
||||||||||||||
|
Seiko Epson |
CMOS |
SURFACE MOUNT |
10 |
8 % |
NO |
3 PPM/FIRST YEAR |
CERAMIC |
5.5 V |
30 pF |
.003 mA |
SOLCC10,.1,28 |
3.2mm x 2.5mm x 1.0mm |
1.5 V |
105 Cel |
85 Cel |
.032768 MHz |
60/40 |
ENABLE/DISABLE FUNCTION; OTHER OPERATING TEMP ALSO AVAILABLE; TR |
||||||||||||||
|
Abracon |
CMOS |
SURFACE MOUNT |
4 |
.05 % |
NO |
1 PPM/FIRST YEAR |
3.465 V |
15 pF |
10 mA |
3.3 V |
DILCC4,.12,154 |
6 ms |
5mm x 3.2mm x 2mm |
3.135 V |
85 Cel |
-40 Cel |
25 MHz |
6 ns |
55/45 |
|||||||||||||
|
Sitime |
LVCMOS |
SURFACE MOUNT |
5 % |
NO |
2.5 PPM/FIRST YEAR |
3.63 V |
15 pF |
3.3 V |
2 ms |
3.2mm x 2.5mm x 0.75mm |
2.97 V |
85 Cel |
-40 Cel |
Nickel/Palladium/Gold (Ni/Pd/Au) |
48 MHz |
2 ns |
55/45 |
ENABLE/DISABLE FUNCTION; TR |
e4 |
|||||||||||||
|
Txc |
CMOS |
SURFACE MOUNT |
6 |
.28 % |
NO |
1 PPM/YEAR |
15 pF |
10 mA |
3.3 V |
LCC6(UNSPEC) |
5.0mm x 3.2mm x 1.5mm |
85 Cel |
-40 Cel |
19.2 MHz |
ENABLE/DISABLE FUNCTION |
TCXO (Temperature Compensated Crystal Oscillator) clock oscillators are electronic devices that generate a stable clock signal for use in various applications, such as communication systems, test and measurement equipment, and timing circuits. They use a crystal oscillator as a frequency reference and a temperature compensation circuit to stabilize the oscillator frequency.
The TCXO clock oscillator works by using a temperature compensation circuit to adjust the frequency of the crystal oscillator, compensating for changes in temperature that can affect the oscillator frequency. This results in a stable and accurate clock signal output.
One of the advantages of TCXO clock oscillators is their high stability and accuracy over a wide temperature range. They can generate clock signals with very low frequency drift and jitter, making them ideal for use in applications that require precise timing.
Another advantage of TCXO clock oscillators is their low phase noise and wide frequency range. They can generate clock signals at frequencies ranging from a few kilohertz to hundreds of megahertz, and have very low phase noise, making them suitable for use in high-precision applications.