SURFACE MOUNT TCXO Clock Oscillators 251

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Part	Manufacturer	Oscillator Type	Mounting Feature	No. of Terminals	Frequency Stability	Frequency Adjustment (Mechanical)	Aging	Package Body Material	Maximum Supply Voltage	Technology	Output Load	Maximum Supply Current	Nominal Supply Voltage	Power Supplies (V)	Package Equivalence Code	Maximum Rise Time	Sub-Category	Physical Dimension	Minimum Supply Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Nominal Operating Frequency	Maximum Fall Time	Maximum Symmetry (%)	Manufacturer Series	Qualification	Maximum Output Low Current	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
ECS-TXO-3225MV-200-TR	Ecs International	HCMOS	SURFACE MOUNT	4	2.5 %	NO	1 PPM/YEAR	CERAMIC	3.6 V		15 pF	6 mA			LCC4,.09X.12,87/69	5 ms		3.2mm x 2.5mm x 1.0mm	1.7 V	85 Cel	-30 Cel		20 MHz	5 ns	45/55				TRI-STATE; ENABLE/DISABLE FUNCTION
ECS-TXO-3225MV-250-TR	Ecs International	HCMOS	SURFACE MOUNT	4	2.5 %	NO	1 PPM/YEAR	CERAMIC	3.6 V		15 pF	6 mA			LCC4,.09X.12,87/69	5 ms		3.2mm x 2.5mm x 1.0mm	1.7 V	85 Cel	-30 Cel		25 MHz	5 ns	45/55				TRI-STATE; ENABLE/DISABLE FUNCTION
ETXO-H33CL-50.000	Ecs International	HCMOS	SURFACE MOUNT	6	2.5 %	NO	1 PPM/YEAR	CERAMIC	3.63 V		15 pF	26 mA	3.3 V		LCC6, 0.09, 53	3 ms		3.2mm x 2.5mm x 1.6mm	2.97 V	85 Cel	-30 Cel		50 MHz	3 ns	45/55				ENABLE/DISABLE FUNCTION
FOX924B-12.288-T1	Fox Electronics	HCMOS	SURFACE MOUNT	4	2.5 %	NO	1 PPM/YEAR		3.465 V		15 pF		3.3 V					5.0mm x 3.2mm x 1.5mm	3.135 V	85 Cel	-30 Cel		12.288 MHz						TR, 10 INCH
FOX924B-25.000-T1	Fox Electronics	HCMOS	SURFACE MOUNT	4	2.5 %	NO	1 PPM/YEAR		3.465 V		15 pF		3.3 V					5.0mm x 3.2mm x 1.5mm	3.135 V	85 Cel	-30 Cel		25 MHz						TR, 10 INCH
FT3HNBPK25.0-T1	Abracon	HCMOS	SURFACE MOUNT	4	2.5 %	NO	1 PPM/YEAR		3.465 V		15 pF	6 mA	3.3 V		LCC4,.09X.12,70/57	5 ms		3.2mm x 2.5mm x 1.0mm	3.135 V	85 Cel	-30 Cel	GOLD OVER NICKEL	25 MHz	5 ns	60/40					e4
SIT1566AC-JV-18E-32.768E	Sitime	LVCMOS	SURFACE MOUNT	4	3 %	NO	1 PPM/FIRST YEAR		1.98 V		15 pF		1.8 V			20 ms		1.54mm x 0.84mm x 0.6mm	1.62 V	70 Cel	-20 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	.032768 MHz	20 ns	55/45				TR	e1
SIT1566AI-JE-18E-32.768E	Sitime	LVCMOS	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR		1.98 V		15 pF		1.8 V			20 ms		1.54mm x 0.84mm x 0.6mm	1.62 V	85 Cel	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	.032768 MHz	20 ns	55/45				TR	e1
SIT1566AI-JE-33E-32.768E	Sitime	LVCMOS	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR				15 pF		3.3 V			20 ms		1.54mm x 0.84mm x 0.6mm		85 Cel	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	.032768 MHz	20 ns	55/45				TR	e1
SIT5000AICGE-33N0-25.000000Y	Sitime	LVCMOS	SURFACE MOUNT		5 %	NO	2.5 PPM/FIRST YEAR		3.63 V		10 KOHM, 10 pF		3.3 V			9.5 ms		2.7mm x 2.4mm x 0.75mm	2.97 V	85 Cel	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	25 MHz	9.5 ns	55/45				TR; ALSO COMPATIBLE WITH 2.5X2 MM FOOTPRINT	e4
SIT5002AI-2E-33E0-160.000000Y	Sitime	LVCMOS	SURFACE MOUNT		5 %	NO	2.5 PPM/YEAR		3.63 V		15 pF		3.3 V			2 ms		3.2mm x 2.5mm x 0.75mm	2.97 V	85 Cel	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	160 MHz	2 ns	55/45				ENABLE/DISABLE FUNCTION; TR	e4
SIT5021AC-1DE-25E-125.000000X	Sitime	LVPECL	SURFACE MOUNT	6	5 %	NO	2.5 PPM/FIRST YEAR	PLASTIC/EPOXY	2.75 V		50 OHM	69 mA	2.5 V		DILCC6,.2	.5 ms		7.0mm x 5.0mm x 0.9mm	2.25 V	70 Cel	-20 Cel		125 MHz	.5 ns	55/45				ENABLE/DISABLE FUNCTION; COMPLEMENTARY OUTPUT
SIT5021AC-2BE-33N-171.000000X	Sitime	LVDS	SURFACE MOUNT		5 %	NO	2.5 PPM/FIRST YEAR		3.63 V		15 pF		3.3 V			.6 ms		3.2mm x 2.5mm x 0.75mm	2.97 V	70 Cel	-20 Cel		171 MHz	.6 ns	55/45				COMPLEMENTRAY OUTPUT; TR
SIT5021AC-2CE-33E-200.000000T	Sitime	LVDS	SURFACE MOUNT		5 %	NO	2.5 PPM/FIRST YEAR		3.63 V		100 OHM		3.3 V			.6 ms		5.0mm x 3.2mm x 0.75mm	2.97 V	70 Cel	-20 Cel		200 MHz	.6 ns	55/45				ENABLE/DISABLE FUNCTION; COMPLEMENTARY OUTPUT; TR
SIT5021AC-2DE-33N-155.520000X	Sitime	LVDS	SURFACE MOUNT	6	5 %	NO	2.5 PPM/FIRST YEAR	PLASTIC/EPOXY	3.63 V		100 OHM	55 mA	3.3 V		DILCC6,.2	.6 ms		7.0mm x 5.0mm x 0.9mm	2.97 V	70 Cel	-20 Cel		155.52 MHz	.6 ns	55/45				COMPLEMENTARY OUTPUT
SIT5155AI-FK-33E0-10.000000	Sitime	LVCMOS	SURFACE MOUNT	10	.5 %	NO	1 PPM/YEAR	CERAMIC	3.63 V		15 pF		3.3 V		LCC10,.12X.2,58/52/48	1.9 ms		5.15mm x 3.35mm x 1.06mm	2.97 V	85 Cel	-40 Cel	GOLD OVER NICKEL	10 MHz	1.9 ns	55/45				ENABLE/DISABLE FUNCTION; MIL-STD-883F	e4
SIT5155AI-FK-33E0-20.000000	Sitime	LVCMOS	SURFACE MOUNT	10	.5 %	NO	1 PPM/YEAR	CERAMIC	3.63 V		15 pF	53 mA	3.3 V		LCC10,.12X.2,58/52/48	1.9 ms		5.15mm x 3.35mm x 1.06mm	2.97 V	85 Cel	-40 Cel	GOLD OVER NICKEL	20 MHz	1.9 ns	55/45				ENABLE/DISABLE FUNCTION; MIL-STD-883F	e4
SIT5155AI-FK-33E0-20.000000X	Sitime	LVCMOS	SURFACE MOUNT	10	.5 %	NO	1 PPM/YEAR	CERAMIC	3.63 V		15 pF	53 mA	3.3 V		LCC10,.12X.2,58/52/48	1.9 ms		5.15mm x 3.35mm x 1.06mm	2.97 V	85 Cel	-40 Cel		20 MHz	1.9 ns	55/45				ENABLE/DISABLE FUNCTION; MIL-STD-883F
SIT5157AI-FK-33N0-100.000000	Sitime	LVCMOS	SURFACE MOUNT	10	.5 %	NO	1 PPM/YEAR	CERAMIC	3.63 V		15 pF	62 mA	3.3 V		LCC10,.12X.2,58/52/48	1.9 ms		5.15mm x 3.35mm x 1.06mm	2.97 V	85 Cel	-40 Cel	GOLD OVER NICKEL	100 MHz	1.9 ns	55/45				MIL-STD-883F	e4
SIT5346AE-FQG33ITB60.000000	Sitime	LVCMOS	SURFACE MOUNT	10	.1 %	NO	0.23 PPM/FIRST YEAR	CERAMIC	3.63 V		15 pF	53 mA	3.3 V		LCC10,.13X.2,58/52/48	1.9 ms		5.15mm x 3.35mm x 1.06mm	2.97 V	105 Cel	-40 Cel		60 MHz	1.9 ns	55/45				ENABLE/DISABLE FUNCTION
SIT5347ACFN-33E0B150.000000	Sitime	LVCMOS	SURFACE MOUNT	10	.25 %	NO	0.3 PPM/YEAR	CERAMIC	3.63 V		15 pF	62 mA	3.3 V		LCC10,.13X.2,58/52/48	1.9 ms		5.15mm x 3.35mm x 1.06mm	2.97 V	70 Cel	-20 Cel		150 MHz	1.9 ns	55/42				ENABLE/DISABLE FUNCTION
SIT5356AI-FQ-33E0-25.000000	Sitime	LVCMOS	SURFACE MOUNT	10	.1 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V		15 pF		3.3 V		LCC10,.12X.2,53/47/43	1.9 ms		5.15mm x 3.35mm x 1.06mm	2.97 V	85 Cel	-40 Cel		25 MHz	1.9 ns	55/45				ENABLE/DISABLE FUNCTION
SIT5356AI-FQ-33N0-10.000000Y	Sitime	LVCMOS	SURFACE MOUNT	10	.1 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V		15 pF		3.3 V		LCC10,.12X.2,53/47/43	1.9 ms		5.15mm x 3.35mm x 1.06mm	2.97 V	85 Cel	-40 Cel	GOLD OVER NICKEL	10 MHz	1.9 ns	55/45					e4
SIT5357AI-FQ-33N0-100.000000	Sitime	LVCMOS	SURFACE MOUNT	10	.1 %	NO	0.23 PPM/YEAR	CERAMIC	3.63 V		15 pF	62 mA	3.3 V		LCC10,.12X.2,58/52/48	1.9 ms		5.15mm x 3.35mm x 1.06mm	2.97 V	85 Cel	-40 Cel		100 MHz	1.9 ns	55/45				MIL-STD-883F
SIT5357AI-FQ-33N0-100.000000F	Sitime	LVCMOS	SURFACE MOUNT	10	.1 %	NO	0.23 PPM/YEAR	CERAMIC	3.63 V		15 pF	62 mA	3.3 V		LCC10,.12X.2,53/47/43	1.9 ms		5.15mm x 3.35mm x 1.06mm	2.97 V	85 Cel	-40 Cel		100 MHz	1.9 ns	55/45
TVB612-100.0M	Connor Winfield	LVCMOS	SURFACE MOUNT		.5 %	NO	3 PPM/20 YEAR		3.465 V		15 pF		3.3 V			8 ms		7.0mm x 5.0mm x 2.0mm	3.135 V	85 Cel	-40 Cel		100 MHz	8 ns	55/45				TR, 10 INCH
TX-7070-EAE-106C-20M0000000	Microchip Technology	HCMOS	SURFACE MOUNT	8	1 %	NO	1 PPM/FIRST YEAR		3.465 V		15 pF		3.3 V			5 ms		7.24mm x 5.21mm x 3.05mm	3.135 V	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	20 MHz	5 ns	60/40				ENABLE/DISABLE FUNCTION; TR, 7 INCH	e4
TX-7070-EAE-106C-50M0000000	Microchip Technology	HCMOS	SURFACE MOUNT	8	1 %	NO	1 PPM/FIRST YEAR		3.465 V		15 pF		3.3 V			5 ms		7.24mm x 5.21mm x 3.05mm	3.135 V	85 Cel	-40 Cel		50 MHz	5 ns	60/40				ENABLE/DISABLE FUNCTION; TR, 7 INCH
VT-501-EAE-2560-10M0000000	Microchip Technology	CMOS	SURFACE MOUNT	4	2.5 %	NO	1 PPM/YEAR	CERAMIC	3.465 V		15 pF	15 mA	3.3 V		DILCC4,.38,300			11.8mm x 9.9mm x 2.2mm	3.135 V	85 Cel	-40 Cel	GOLD OVER NICKEL	10 MHz		40/60					e4
VT-704-EAE-2060-13M0000000	Microchip Technology	CMOS	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.465 V		15 pF	6 mA	3.3 V		DILCC4,.2,200	4 ms		7.0mm x 5.0mm x 1.9mm	3.135 V	85 Cel	-40 Cel		13 MHz	4 ns	55/45				TR, 7 INCH
VTB1-1A0-10M0000000	Microchip Technology	HCMOS/TTL	SURFACE MOUNT	4	1 %	YES	1 PPM/YEAR		5.25 V		2 TTL	20 mA	5 V		SMDIP4/14,.3,100			18.3mm x 12.0mm x 5.0mm	4.75 V	50 Cel	0 Cel		10 MHz
DS4026S+ECC	Analog Devices	CMOS	SURFACE MOUNT	16	1 %	NO	1 PPM/FIRST YEAR	PLASTIC/EPOXY	3.465 V	CMOS		2.5 mA	3.3 V	3.3	SOP16,.4	2 ms	Other Oscillators		3.135 V	70 Cel	0 Cel		16.8 MHz	2 ns	55/45		Not Qualified	2 Amp			10 MHz	51.84 MHz
DS76KHZ	Analog Devices	TTL	SURFACE MOUNT	6	7.5 %	NO	1 PPM/YEAR				15 PF		5 V			325 ms		11.557mm x 10.287mm x 4.826mm		85 Cel	-40 Cel	TIN LEAD	.0768 MHz	75 ns	55/45					e0
DS4026S+RCC	Analog Devices	CMOS	SURFACE MOUNT	16	1 %	NO	1 PPM/FIRST YEAR	PLASTIC/EPOXY	3.465 V	CMOS		2.5 mA	3.3 V	3.3	SOP16,.4	2 ms	Other Oscillators		3.135 V	70 Cel	0 Cel		24 MHz	2 ns	55/45		Not Qualified	2 Amp			10 MHz	51.84 MHz
DS76KHZ-N	Analog Devices	CMOS	SURFACE MOUNT	36	7.5 %	NO	1 PPM/YEAR		5.5 V		15 pF	.18 mA	5 V		BGA36,4X9,21			11.557mm x 10.287mm x 4.826mm	4.5 V	85 Cel	-40 Cel		.0768 MHz		55/45
DS4026S+FCC	Maxim Integrated	CMOS	SURFACE MOUNT	16	1 %	NO	1 PPM/FIRST YEAR	PLASTIC/EPOXY	3.465 V	CMOS		2.5 mA	3.3 V	3.3	SOP16,.4	2 ms	Other Oscillators		3.135 V	70 Cel	0 Cel		16.384 MHz	2 ns	55/45	DS4026	Not Qualified	2 Amp			10 MHz	51.84 MHz
DS4026S3+ACN	Maxim Integrated	CMOS	SURFACE MOUNT	16	1 %	NO	1 PPM/FIRST YEAR	PLASTIC/EPOXY	3.465 V	CMOS		2.5 mA	3.3 V	3.3	SOP16,.4	2 ms	Other Oscillators		3.135 V	85 Cel	-40 Cel		10 MHz	2 ns	55/45	DS4026	Not Qualified	2 Amp			10 MHz	51.84 MHz
DS4026S+HCN	Maxim Integrated	CMOS	SURFACE MOUNT	16	1 %	NO	1 PPM/FIRST YEAR	PLASTIC/EPOXY	3.465 V	CMOS		2.5 mA	3.3 V	3.3	SOP16,.4	2 ms	Other Oscillators		3.135 V	85 Cel	-40 Cel		19.44 MHz	2 ns	55/45	DS4026	Not Qualified	2 Amp			10 MHz	51.84 MHz
DS4026S+ECN	Maxim Integrated	CMOS	SURFACE MOUNT	16	1 %	NO	1 PPM/FIRST YEAR	PLASTIC/EPOXY	3.465 V	CMOS		2.5 mA	3.3 V	3.3	SOP16,.4	2 ms	Other Oscillators		3.135 V	85 Cel	-40 Cel		16.8 MHz	2 ns	55/45	DS4026	Not Qualified	2 Amp			10 MHz	51.84 MHz
DS4026S+ACC	Maxim Integrated	CMOS	SURFACE MOUNT	16	1 %	NO	1 PPM/FIRST YEAR	PLASTIC/EPOXY	3.465 V	CMOS		2.5 mA	3.3 V	3.3	SOP16,.4	2 ms	Other Oscillators		3.135 V	70 Cel	0 Cel		10 MHz	2 ns	55/45	DS4026	Not Qualified	2 Amp			10 MHz	51.84 MHz
DS4026S+RCN	Maxim Integrated	CMOS	SURFACE MOUNT	16	1 %	NO	1 PPM/FIRST YEAR	PLASTIC/EPOXY	3.465 V	CMOS		2.5 mA	3.3 V	3.3	SOP16,.4	2 ms	Other Oscillators		3.135 V	85 Cel	-40 Cel		24 MHz	2 ns	55/45	DS4026	Not Qualified	2 Amp			10 MHz	51.84 MHz
DS4026S+JCC	Maxim Integrated	CMOS	SURFACE MOUNT	16	1 %	NO	1 PPM/FIRST YEAR	PLASTIC/EPOXY	3.465 V	CMOS		2.5 mA	3.3 V	3.3	SOP16,.4	2 ms	Other Oscillators		3.135 V	70 Cel	0 Cel		20 MHz	2 ns	55/45	DS4026	Not Qualified	2 Amp			10 MHz	51.84 MHz
DS4026S3+JCN	Maxim Integrated	CMOS	SURFACE MOUNT	16	1 %	NO	1 PPM/FIRST YEAR	PLASTIC/EPOXY	3.465 V	CMOS		2.5 mA	3.3 V	3.3	SOP16,.4	2 ms	Other Oscillators		3.135 V	85 Cel	-40 Cel		20 MHz	2 ns	55/45	DS4026	Not Qualified	2 Amp			10 MHz	51.84 MHz
DS4026S+MCC	Maxim Integrated	CMOS	SURFACE MOUNT	16	1 %	NO	1 PPM/FIRST YEAR	PLASTIC/EPOXY	3.465 V	CMOS		2.5 mA	3.3 V	3.3	SOP16,.4	2 ms	Other Oscillators		3.135 V	70 Cel	0 Cel	Tin (Sn)	38.88 MHz	2 ns	55/45	DS4026	Not Qualified	2 Amp		e3	10 MHz	51.84 MHz
DS4026S3+GCN	Maxim Integrated	CMOS	SURFACE MOUNT	16	1 %	NO	1 PPM/FIRST YEAR	PLASTIC/EPOXY	3.465 V	CMOS		2.5 mA	3.3 V	3.3	SOP16,.4	2 ms	Other Oscillators		3.135 V	85 Cel	-40 Cel		19.2 MHz	2 ns	55/45	DS4026	Not Qualified	2 Amp			10 MHz	51.84 MHz
DS4026S+BCC	Maxim Integrated	CMOS	SURFACE MOUNT	16	1 %	NO	1 PPM/FIRST YEAR	PLASTIC/EPOXY	3.465 V	CMOS		2.5 mA	3.3 V	3.3	SOP16,.4	2 ms	Other Oscillators		3.135 V	70 Cel	0 Cel		12.8 MHz	2 ns	55/45	DS4026	Not Qualified	2 Amp			10 MHz	51.84 MHz
DS4000A0/BGA	Maxim Integrated	CMOS	SURFACE MOUNT	24	1 %	NO	1 PPM/YEAR	PLASTIC/EPOXY	5.25 V		10 pF		5 V	5	BGA24,6X8,50	4 ms	Other Oscillators	11mm x 9mm x 2.76mm	4.75 V	85 Cel	-40 Cel	Tin/Lead (Sn/Pb)	10 MHz	4 ns	60/40	DS4000	Not Qualified			e0	10 MHz	19.44 MHz
DS4026S+JCN	Maxim Integrated	CMOS	SURFACE MOUNT	16	1 %	NO	1 PPM/FIRST YEAR	PLASTIC/EPOXY	3.465 V	CMOS		2.5 mA	3.3 V	3.3	SOP16,.4	2 ms	Other Oscillators		3.135 V	85 Cel	-40 Cel		20 MHz	2 ns	55/45	DS4026	Not Qualified	2 Amp			10 MHz	51.84 MHz

TCXO Clock Oscillators

TCXO (Temperature Compensated Crystal Oscillator) clock oscillators are electronic devices that generate a stable clock signal for use in various applications, such as communication systems, test and measurement equipment, and timing circuits. They use a crystal oscillator as a frequency reference and a temperature compensation circuit to stabilize the oscillator frequency.

The TCXO clock oscillator works by using a temperature compensation circuit to adjust the frequency of the crystal oscillator, compensating for changes in temperature that can affect the oscillator frequency. This results in a stable and accurate clock signal output.

One of the advantages of TCXO clock oscillators is their high stability and accuracy over a wide temperature range. They can generate clock signals with very low frequency drift and jitter, making them ideal for use in applications that require precise timing.

Another advantage of TCXO clock oscillators is their low phase noise and wide frequency range. They can generate clock signals at frequencies ranging from a few kilohertz to hundreds of megahertz, and have very low phase noise, making them suitable for use in high-precision applications.