TCXO Sine Wave Oscillators

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Part	Manufacturer	Oscillator Type	Mounting Feature	No. of Terminals	Frequency Stability	Frequency Adjustment (Mechanical)	Aging	Package Body Material	Maximum Supply Voltage	Technology	Screening Level	Output Impedance	Maximum Supply Current	Nominal Supply Voltage	Package Equivalence Code	Physical Dimension	Minimum Supply Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Nominal Operating Frequency	Output Level	Additional Features	JESD-609 Code
TG2520SMN32.0000MECGNNM3	Seiko Epson	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1.5 PPM/FIRST YEAR		1.9 V		IATF 16949	10000 ohm	1.8 mA	1.8 V	LCC4,.08X.1,80/53	2.5mm x 2.0mm x 0.8mm	1.7 V	85 Cel	-40 Cel	GOLD	32 MHz	.8 V		e4
516L20005CTR	Cts	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.465 V			10000 ohm	2 mA	3.3 V	LCC4,.06X.08,50/38	2.0mm x 1.6mm x 0.8mm	3.135 V	70 Cel	-20 Cel	GOLD OVER NICKEL	20 MHz	.8 V		e4
516L20005DTR	Cts	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.465 V			10000 ohm	2 mA	3.3 V	LCC4,.06X.08,50/38	2.0mm x 1.6mm x 0.8mm	3.135 V	85 Cel	-30 Cel	GOLD OVER NICKEL	20 MHz	.8 V		e4
516L20005ITR	Cts	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.465 V			10000 ohm	2 mA	3.3 V	LCC4,.06X.08,50/38	2.0mm x 1.6mm x 0.8mm	3.135 V	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	20 MHz	.8 V		e4
516L20010CTR	Cts	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.465 V			10000 ohm	2 mA	3.3 V	LCC4,.06X.08,50/38	2.0mm x 1.6mm x 0.8mm	3.135 V	70 Cel	-20 Cel	GOLD OVER NICKEL	20 MHz	.8 V		e4
516L20010DTR	Cts	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.465 V			10000 ohm	2 mA	3.3 V	LCC4,.06X.08,50/38	2.0mm x 1.6mm x 0.8mm	3.135 V	85 Cel	-30 Cel	GOLD OVER NICKEL	20 MHz	.8 V		e4
516L20010ITR	Cts	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.465 V			10000 ohm	2 mA	3.3 V	LCC4,.06X.08,50/38	2.0mm x 1.6mm x 0.8mm	3.135 V	85 Cel	-40 Cel	TIN SILVER COPPER OVER NICKEL	20 MHz	.8 V
516L20015CTR	Cts	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.465 V			10000 ohm	2 mA	3.3 V	LCC4,.06X.08,50/38	2.0mm x 1.6mm x 0.8mm	3.135 V	70 Cel	-20 Cel	TIN SILVER COPPER OVER NICKEL	20 MHz	.8 V
516L20015DTR	Cts	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.465 V			10000 ohm	2 mA	3.3 V	LCC4,.06X.08,50/38	2.0mm x 1.6mm x 0.8mm	3.135 V	85 Cel	-30 Cel	GOLD OVER NICKEL	20 MHz	.8 V		e4
516L20015ITR	Cts	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.465 V			10000 ohm	2 mA	3.3 V	LCC4,.06X.08,50/38	2.0mm x 1.6mm x 0.8mm	3.135 V	85 Cel	-40 Cel	TIN SILVER COPPER OVER NICKEL	20 MHz	.8 V
516L20020CTR	Cts	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.465 V			10000 ohm	2 mA	3.3 V	LCC4,.06X.08,50/38	2.0mm x 1.6mm x 0.8mm	3.135 V	70 Cel	-20 Cel	Gold (Au) - with Nickel (Ni) barrier	20 MHz	.8 V		e4
516L20020DTR	Cts	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.465 V			10000 ohm	2 mA	3.3 V	LCC4,.06X.08,50/38	2.0mm x 1.6mm x 0.8mm	3.135 V	85 Cel	-30 Cel	Gold (Au) - with Nickel (Ni) barrier	20 MHz	.8 V		e4
516L20020ITR	Cts	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.465 V			10000 ohm	2 mA	3.3 V	LCC4,.06X.08,50/38	2.0mm x 1.6mm x 0.8mm	3.135 V	85 Cel	-40 Cel	GOLD OVER NICKEL	20 MHz	.8 V		e4
516L20025CTR	Cts	CLIPPED SINE	SURFACE MOUNT	4	2.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.465 V			10000 ohm	2 mA	3.3 V	LCC4,.06X.08,50/38	2.0mm x 1.6mm x 0.8mm	3.135 V	70 Cel	-20 Cel	GOLD OVER NICKEL	20 MHz	.8 V		e4
516L20025DTR	Cts	CLIPPED SINE	SURFACE MOUNT	4	2.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.465 V			10000 ohm	2 mA	3.3 V	LCC4,.06X.08,50/38	2.0mm x 1.6mm x 0.8mm	3.135 V	85 Cel	-30 Cel	TIN SILVER COPPER OVER NICKEL	20 MHz	.8 V
516L20025ITR	Cts	CLIPPED SINE	SURFACE MOUNT	4	2.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.465 V			10000 ohm	2 mA	3.3 V	LCC4,.06X.08,50/38	2.0mm x 1.6mm x 0.8mm	3.135 V	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	20 MHz	.8 V		e4
AST3TQ53-T-16.384MHZ-5-SW-T5	Abracon	CLIPPED SINE	SURFACE MOUNT	4	.05 %	NO	1 PPM/FIRST YEAR		3.465 V			10000 ohm	10 mA	3.3 V	DILCC4,.12,154	5mm x 3.2mm x 2mm	3.135 V	85 Cel	-40 Cel		16.384 MHz	.8 V
AST3TQ53-T-20.000MHZ-2-SW	Abracon	CLIPPED SINE	SURFACE MOUNT	4	.28 %	NO	1 PPM/FIRST YEAR		3.465 V			10000 ohm	10 mA	3.3 V	DILCC4,.12,154	5mm x 3.2mm x 2mm	3.135 V	85 Cel	-40 Cel		20 MHz	.8 V
AST3TQ53-T-20.000MHZ-2-SW-T5	Abracon	CLIPPED SINE	SURFACE MOUNT	4	.28 %	NO	1 PPM/FIRST YEAR		3.465 V			10000 ohm	10 mA	3.3 V	DILCC4,.12,154	5mm x 3.2mm x 2mm	3.135 V	85 Cel	-40 Cel		20 MHz	.8 V
AST3TQ53-T-26.000MHZ-1-SW	Abracon	CLIPPED SINE	SURFACE MOUNT	4	.1 %	NO	1 PPM/FIRST YEAR		3.465 V			10000 ohm	10 mA	3.3 V	DILCC4,.12,154	5mm x 3.2mm x 2mm	3.135 V	85 Cel	-40 Cel		26 MHz	.8 V
ASTX-13-D-32.000MHZ-I05-T4	Abracon	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR		3.465 V			10000 ohm		3.3 V	LCC4,.06X.08,63/40	2.0mm x 1.6mm x 0.8mm	3.135 V	85 Cel	-40 Cel		32 MHz	.8 V
LFTCXO063784BULK	Iqd Frequency Products	CLIPPED SINE	SURFACE MOUNT	8	.5 %	NO	1 PPM/YEAR		3.465 V			10000 ohm	10 mA	3.3 V	DILCC4,.13,157	5.0mm x 3.2mm x 2.0mm	3.135 V	85 Cel	-40 Cel		20 MHz	.8 V	BULK
VT-803-EFE-2870-50M0000000	Microchip Technology	CLIPPED SINE	SURFACE MOUNT	8	.28 %	NO	0.5 PPM/FIRST YEAR	CERAMIC	3.63 V	CLIPPED SINE		10000 ohm	3.4 mA	3.3 V	DILCC8,.12,55/47	5.0mm x 3.2mm x 1.5mm	2.97 V	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	50 MHz	.8 V		e4
AST3TQ53-T-25.000MHZ-2-SW	Abracon	CLIPPED SINE	SURFACE MOUNT	4	.28 %	NO	1 PPM/FIRST YEAR		3.465 V			10000 ohm	10 mA	3.3 V	DILCC4,.12,154	5mm x 3.2mm x 2mm	3.135 V	85 Cel	-40 Cel		25 MHz	.8 V
AST3TQ53-T-25.000MHZ-5-SW	Abracon	CLIPPED SINE	SURFACE MOUNT	4	.05 %	NO	1 PPM/FIRST YEAR		3.465 V			10000 ohm	10 mA	3.3 V	DILCC4,.12,154	5mm x 3.2mm x 2mm	3.135 V	85 Cel	-40 Cel		25 MHz	.8 V
ASTX-13-D-32.000MHZ-I05-T	Abracon	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR		3.465 V			10000 ohm		3.3 V		2.0mm x 1.6mm x 0.8mm	3.135 V	85 Cel	-40 Cel	GOLD OVER NICKEL	32 MHz	.8 V	TR, 7 INCH	e4
ASTXR-12-38.400MHZ-514054-T	Abracon	CLIPPED SINE	SURFACE MOUNT	6	.5 %	NO	1 PPM/FIRST YEAR		3.46 V			11000 ohm	2 mA	3.3 V	SOLCC6,.08,37	2.5mm x 2mm x 0.8mm	3.14 V	85 Cel	-40 Cel		38.4 MHz	.8 V
ECS-RTC-3225-5609-TR	Ecs International	SINE
O10.0-JT33-B-K-3.3-LF	Jauch Quartz	CLIPPED SINE	SURFACE MOUNT		2 %	NO	1 PPM/FIRST YEAR		3.465 V			10000 ohm		3.3 V		3.2mm x 2.5mm x 1.0mm	3.135 V	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	10 MHz	.8 V	BULK; TR, 7 INCH	e4
O30.0-JT22S-B-K-3.3-LF	Jauch Quartz	CLIPPED SINE	SURFACE MOUNT		2 %	NO	1 PPM/FIRST YEAR		3.465 V			10000 ohm		3.3 V		2.5mm x 2.0mm x 0.8mm	3.135 V	85 Cel	-40 Cel	Nickel/Gold (Ni/Au)	30 MHz	.8 V	BULK; TR, 7 INCH	e4
TG2016SMN38.4000MECGNNM3	Seiko Epson	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1.5 PPM/FIRST YEAR		1.9 V		IATF 16949	10000 ohm	1.8 mA	1.8 V	LCC4,.06X.08,62/46	2.0mm x 1.6mm x 0.73mm	1.7 V	85 Cel	-40 Cel	GOLD	38.4 MHz	.8 V		e4
TXETCLSANF-40.000000	Taitien Electronics
XTCLH40M000THJA1P0	Murata Manufacturing	CLIPPED SINE	SURFACE MOUNT	8	.2 %	NO	0.5 PPM/YEAR		3.15 V			10000 ohm		3 V		5.0mm x 3.2mm x 1.5mm	2.85 V	85 Cel	-40 Cel		40 MHz	.8 V	TR, PLASTIC, 10 INCH
7Z-26.000MDG-T	Txc	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/YEAR					10000 ohm	2 mA	1.8 V	LCC4,.06X.08,59/46	2mm x 1.6mm x 0.8mm		85 Cel	-30 Cel		26 MHz	.8 V
TG2016SMN26.0000MECGNNM3	Seiko Epson	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1.5 PPM/FIRST YEAR		1.9 V		IATF 16949	10000 ohm	1.5 mA	1.8 V	LCC4,.06X.08,62/46	2.0mm x 1.6mm x 0.73mm	1.7 V	85 Cel	-40 Cel	GOLD	26 MHz	.8 V		e4
TG2016SMN48.0000MMCGNNM3	Seiko Epson	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1.5 PPM/FIRST YEAR		3.465 V		IATF 16949	10000 ohm	2 mA		LCC4,.06X.08,62/46	2.0mm x 1.6mm x 0.73mm	2.66 V	85 Cel	-40 Cel	GOLD	48 MHz	.8 V		e4
TG2520SMN26.0000MMCGNNM3	Seiko Epson	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1.5 PPM/FIRST YEAR		3.465 V		IATF 16949	10000 ohm	1.5 mA		LCC4,.08X.1,80/53	2.5mm x 2.0mm x 0.8mm	2.66 V	85 Cel	-40 Cel	GOLD	26 MHz	.8 V		e4
X1G005441020616	Seiko Epson	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	0.5 PPM/FIRST YEAR	CERAMIC	1.9 V			10000 ohm	1.8 mA	1.8 V	LCC4, .08X.06,65/44	2.0mm x 1.6mm x 0.73mm	1.7 V	85 Cel	-40 Cel	GOLD	38.4 MHz	.8 V		e4
ASTX-13-C-40.000MHZ-I05-T	Abracon	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR		1.89 V			10000 ohm		1.8 V		2.0mm x 1.6mm x 0.8mm	1.71 V	85 Cel	-40 Cel	GOLD OVER NICKEL	40 MHz	.8 V	TR, 7 INCH	e4
ATX-13-F-38.400MHZ-F05-T	Abracon	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V			11000 ohm	2.5 mA		LCC4,.06X.08,50/38	2mm x 1.6mm x 0.8mm	1.68 V	85 Cel	-40 Cel		38.4 MHz	.8 V
FT5CNDPK20.0-T1	Abracon	CLIPPED SINE	SURFACE MOUNT	4	2.5 %	NO	1 PPM/YEAR		3.15 V			10000 ohm		3 V		5.0mm x 3.2mm x 1.5mm	2.85 V	85 Cel	-30 Cel	GOLD OVER NICKEL	20 MHz	.8 V	TR	e4
ASTX-13-C-26.000MHZ-I05-T4	Abracon	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR		1.89 V			10000 ohm		1.8 V		2.0mm x 1.6mm x 0.8mm	1.71 V	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	26 MHz	.8 V	TR, 7 INCH	e4
AST3TQ53-T-10.000MHZ-2-SW	Abracon	CLIPPED SINE	SURFACE MOUNT	4	.28 %	NO	1 PPM/FIRST YEAR		3.465 V			10000 ohm	10 mA	3.3 V	DILCC4,.12,154	5mm x 3.2mm x 2mm	3.135 V	85 Cel	-40 Cel		10 MHz	.8 V
AST3TQ53-T-40.000MHZ-2-SW	Abracon	CLIPPED SINE	SURFACE MOUNT	4	.28 %	NO	1 PPM/FIRST YEAR		3.465 V			10000 ohm	10 mA	3.3 V	DILCC4,.12,154	5mm x 3.2mm x 2mm	3.135 V	85 Cel	-40 Cel		40 MHz	.8 V
ASTX-13-C-26.000MHZ-I05-T	Abracon
ASTX-13-D-26.000MHZ-I05-T	Abracon	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR		3.465 V			10000 ohm		3.3 V		2.0mm x 1.6mm x 0.8mm	3.135 V	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	26 MHz	.8 V	TR, 7 INCH	e4
ASTX-13-D-38.400MHZ-I05-T	Abracon
ATX-11-F-26.000MHZ-F05-T	Abracon	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V			11000 ohm	2 mA		LCC4,.1X.13,83/65	3.2mm x 2.5mm x 1.2mm	1.68 V	85 Cel	-40 Cel	Nickel/Gold (Ni/Au)	26 MHz	.8 V		e4

TCXO (Temperature Compensated Crystal Oscillator) sine wave oscillators are electronic devices that generate a stable sine wave signal for use in various applications, such as communication systems, test and measurement equipment, and frequency synthesizers. They use a crystal oscillator as a frequency reference and a temperature compensation circuit to stabilize the oscillator frequency.

The TCXO sine wave oscillator works by using a temperature compensation circuit to adjust the frequency of the crystal oscillator, compensating for changes in temperature that can affect the oscillator frequency. This results in a stable and accurate sine wave signal output.

An advantages of TCXO sine wave oscillators is their high stability and accuracy over a wide temperature range. They can generate sine wave signals with very low frequency drift and jitter, making them ideal for use in applications that require precise timing.