TCXO Sine Wave Oscillators

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Part	Manufacturer	Oscillator Type	Mounting Feature	No. of Terminals	Frequency Stability	Frequency Adjustment (Mechanical)	Aging	Package Body Material	Maximum Supply Voltage	Screening Level	Output Impedance	Maximum Supply Current	Nominal Supply Voltage	Power Supplies (V)	Package Equivalence Code	Sub-Category	Physical Dimension	Minimum Supply Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Nominal Operating Frequency	Qualification	Output Level	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
ATX-11-F-27.000MHZ-F05-T	Abracon	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V		11000 ohm	2.5 mA			LCC4,.1X.13,83/65		3.2mm x 2.5mm x 1.2mm	1.68 V	85 Cel	-40 Cel		27 MHz		.8 V
ATX-11-F-32.000MHZ-F05-T	Abracon	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V		11000 ohm	2.5 mA			LCC4,.1X.13,83/65		3.2mm x 2.5mm x 1.2mm	1.68 V	85 Cel	-40 Cel		32 MHz		.8 V
ATX-13-F-26.000MHZ-F05-T	Abracon	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V		11000 ohm	2 mA			LCC4,.06X.08,50/38		2mm x 1.6mm x 0.8mm	1.68 V	85 Cel	-40 Cel		26 MHz		.8 V
ATX-13-F-50.000MHZ-F05-T	Abracon	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.63 V		11000 ohm	2.5 mA			LCC4,.06X.08,50/38		2mm x 1.6mm x 0.8mm	1.68 V	85 Cel	-40 Cel		50 MHz		.8 V
520L15IT19M2000	Cts	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.47 V		10000 ohm	2 mA	3.3 V		LCC4,.08X.1,77/53		2.5mm x 2.0mm x 0.8mm	3.14 V	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	19.2 MHz		.8 V	TR, 7 INCH	e4
520M20IT26M0000	Cts
532L25DT19M4400	Cts	CLIPPED SINE	SURFACE MOUNT	4	2.5 %	NO	1 PPM/FIRST YEAR		3.47 V		10000 ohm		3.3 V				5.0mm x 3.2mm x 1.6mm	3.14 V	85 Cel	-30 Cel	Gold (Au) - with Nickel (Ni) barrier	19.44 MHz		.8 V	TAPE AND REEL	e4
7Q-20.000MBN-T	Txc	CLIPPED SINE	SURFACE MOUNT	4				CERAMIC				2 mA	3.3 V	3.3	DILCC4,.1,104	Other Oscillators			85 Cel	-30 Cel		20 MHz	Not Qualified				13 MHz	52 MHz
ASTX-13-C-32.000MHZ-I05-T	Abracon	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR		1.89 V		10000 ohm		1.8 V				2.0mm x 1.6mm x 0.8mm	1.71 V	85 Cel	-40 Cel	GOLD OVER NICKEL	32 MHz		.8 V	TR, 7 INCH	e4
ASTX-13-C-38.400MHZ-I05-T	Abracon	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR		1.89 V		10000 ohm		1.8 V				2.0mm x 1.6mm x 0.8mm	1.71 V	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	38.4 MHz		.8 V	TR, 7 INCH	e4
ASTX-13-C-52.000MHZ-I15-T	Abracon	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR		1.89 V		10000 ohm		1.8 V				2.0mm x 1.6mm x 0.8mm	1.71 V	85 Cel	-40 Cel	Gold (Au) - with Nickel (Ni) barrier	52 MHz		.8 V	TR, 7 INCH	e4
ECS-TXO-25CSMV-320-BM-TR	Ecs International	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR		3.465 V		10000 ohm						2.5mm x 2.0mm x 0.9mm	1.7 V	70 Cel	-20 Cel	Gold (Au)	32 MHz		.8 V	TR	e4
FT5CNDPK12.8-T1	Abracon	CLIPPED SINE	SURFACE MOUNT	4	2.5 %	NO	1 PPM/YEAR		3.15 V		10000 ohm		3 V				5.0mm x 3.2mm x 1.5mm	2.85 V	75 Cel	-20 Cel	GOLD OVER NICKEL	12.8 MHz		.8 V	TR	e4
LFTCXO075801CUTT	Iqd Frequency Products	CLIPPED SINE	SURFACE MOUNT	4	.28 %	NO	1 PPM/YEAR		3.465 V		10000 ohm		3.3 V				3.2mm x 2.5mm x 0.9mm	3.135 V	85 Cel	-40 Cel		40 MHz		.8 V	TAPE
LFTCXO077228REEL	Iqd Frequency Products	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/YEAR		1.26 V		10000 ohm		1.2 V				2.0mm x 1.6mm x 0.7mm	1.14 V	85 Cel	-30 Cel		19.2 MHz		.8 V	ENABLE/DISABLE FUNCTION; TR
LFTCXO079058CUTT	Iqd Frequency Products
NT2520SB-52M-NSA3557D	Nihon Dempa Kogyo	SINE	SURFACE MOUNT	6	.5 %	NO	1 PPM/YEAR			AEC-Q100/200	10000 ohm	2 mA	1.8 V		LCC6,.1X.08,85/51		2.5mm x 2.0mm x 0.8mm		85 Cel	-30 Cel		52 MHz		.8 V
TG2016SMN26.0000M-TCGNNMX	Seiko Epson	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	0.5 PPM/FIRST YEAR		3.3 V		10000 ohm	1.5 mA			LCC4,.06X.08,62/46		2.0mm x 1.6mm x 0.73mm	1.8 V	85 Cel	-40 Cel	GOLD	26 MHz		.8 V		e4
X1G004131001000	Seiko Epson	CLIPPED SINE	SURFACE MOUNT		.5 %	NO	1 PPM/FIRST YEAR		3.3 V		11000 ohm						2.0mm x 1.6mm x 0.73mm	1.7 V	85 Cel	-30 Cel	GOLD	26 MHz		.8 V	TR, 13 INCH	e4
JT3253F0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR		1.89 V		10000 ohm		1.8 V				3.2mm x 2.5mm x 1.0mm	1.71 V	85 Cel	-30 Cel		10 MHz		.8 V
JT325FM0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR		2.8875 V		10000 ohm		2.75 V				3.2mm x 2.5mm x 1.0mm	2.6125 V	75 Cel	-30 Cel		19.2 MHz		.8 V
WT255GO0016.369000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2.5 %	NO	1 PPM/FIRST YEAR		2.52 V		11000 ohm		2.4 V				2.5mm x 2.0mm x 0.8mm	2.28 V	75 Cel	-30 Cel		16.369 MHz		.8 V
WT3252W0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR		2.625 V		10000 ohm		2.5 V				3.2mm x 2.5mm x 1.2mm	2.375 V	70 Cel	-20 Cel		10 MHz		.8 V
WT325ED0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.9925 V		10000 ohm		2.85 V				3.2mm x 2.5mm x 1.2mm	2.7075 V	70 Cel	-20 Cel		25 MHz		.8 V
WT2551B0016.367667	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR		3.465 V		11000 ohm		3.3 V				2.5mm x 2.0mm x 0.8mm	3.135 V	70 Cel	-20 Cel		16.367667 MHz		.8 V
WT325FA0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR		2.8875 V		10000 ohm		2.75 V				3.2mm x 2.5mm x 1.2mm	2.6125 V	70 Cel	-20 Cel		25 MHz		.8 V
WT3252S0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.625 V		10000 ohm		2.5 V				3.2mm x 2.5mm x 1.2mm	2.375 V	85 Cel	-40 Cel		40 MHz		.8 V
JT325EU0010.240000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR		2.9925 V		10000 ohm		2.85 V				3.2mm x 2.5mm x 1.0mm	2.7075 V	85 Cel	-40 Cel		10.24 MHz		.8 V
JT3254L0026.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR		1.575 V		10000 ohm		1.5 V				3.2mm x 2.5mm x 1.0mm	1.425 V	75 Cel	-30 Cel		26 MHz		.8 V
WT255FW0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR		2.8875 V		11000 ohm		2.75 V				2.5mm x 2.0mm x 0.8mm	2.6125 V	70 Cel	-20 Cel		25 MHz		.8 V
WT255FA0026.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR		2.8875 V		11000 ohm		2.75 V				2.5mm x 2.0mm x 0.8mm	2.6125 V	70 Cel	-20 Cel		26 MHz		.8 V
JT255EU0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR		2.9925 V		10000 ohm		2.85 V				2.5mm x 2.0mm x 0.8mm	2.7075 V	85 Cel	-40 Cel		10 MHz		.8 V
JT2552B0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR		2.625 V		10000 ohm		2.5 V				2.5mm x 2.0mm x 0.8mm	2.375 V	70 Cel	-20 Cel		10 MHz		.8 V
JT3251J0016.369000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2.5 %	NO	1 PPM/FIRST YEAR		3.465 V		10000 ohm		3.3 V				3.2mm x 2.5mm x 1.0mm	3.135 V	85 Cel	-30 Cel		16.369 MHz		.8 V
JT3251L0026.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR		3.465 V		10000 ohm		3.3 V				3.2mm x 2.5mm x 1.0mm	3.135 V	75 Cel	-30 Cel		26 MHz		.8 V
JT3251F0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR		3.465 V		10000 ohm		3.3 V				3.2mm x 2.5mm x 1.0mm	3.135 V	85 Cel	-30 Cel		10 MHz		.8 V
JT3253D0010.240000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		1.89 V		10000 ohm		1.8 V				3.2mm x 2.5mm x 1.0mm	1.71 V	70 Cel	-20 Cel		10.24 MHz		.8 V
JT325FM0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR		2.8875 V		10000 ohm		2.75 V				3.2mm x 2.5mm x 1.0mm	2.6125 V	75 Cel	-30 Cel		40 MHz		.8 V
JT325FA0016.369000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR		2.8875 V		10000 ohm		2.75 V				3.2mm x 2.5mm x 1.0mm	2.6125 V	70 Cel	-20 Cel		16.369 MHz		.8 V
JT3251L0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR		3.465 V		10000 ohm		3.3 V				3.2mm x 2.5mm x 1.0mm	3.135 V	75 Cel	-30 Cel		10 MHz		.8 V
WT325FH0016.367667	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR		2.8875 V		10000 ohm		2.75 V				3.2mm x 2.5mm x 1.2mm	2.6125 V	85 Cel	-30 Cel		16.367667 MHz		.8 V
WT325DC0016.369000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR		2.835 V		10000 ohm		2.7 V				3.2mm x 2.5mm x 1.2mm	2.565 V	70 Cel	-20 Cel		16.369 MHz		.8 V
JT3252K0052.000000	Diodes Incorporated
WT255CR0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR		2.97 V		11000 ohm		2.8 V				2.5mm x 2.0mm x 0.8mm	2.66 V	85 Cel	-40 Cel		25 MHz		.8 V
WT2552M0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR		2.625 V		11000 ohm		2.5 V				2.5mm x 2.0mm x 0.8mm	2.375 V	75 Cel	-30 Cel		25 MHz		.8 V
WT3252E0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2.5 %	NO	1 PPM/FIRST YEAR		2.625 V		10000 ohm		2.5 V				3.2mm x 2.5mm x 1.2mm	2.375 V	70 Cel	-20 Cel		40 MHz		.8 V
WT325BX0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR		3.15 V		10000 ohm		3 V				3.2mm x 2.5mm x 1.2mm	2.85 V	85 Cel	-30 Cel		25 MHz		.8 V
WT325DC0016.367667	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR		2.835 V		10000 ohm		2.7 V				3.2mm x 2.5mm x 1.2mm	2.565 V	70 Cel	-20 Cel		16.367667 MHz		.8 V

TCXO (Temperature Compensated Crystal Oscillator) sine wave oscillators are electronic devices that generate a stable sine wave signal for use in various applications, such as communication systems, test and measurement equipment, and frequency synthesizers. They use a crystal oscillator as a frequency reference and a temperature compensation circuit to stabilize the oscillator frequency.

The TCXO sine wave oscillator works by using a temperature compensation circuit to adjust the frequency of the crystal oscillator, compensating for changes in temperature that can affect the oscillator frequency. This results in a stable and accurate sine wave signal output.

An advantages of TCXO sine wave oscillators is their high stability and accuracy over a wide temperature range. They can generate sine wave signals with very low frequency drift and jitter, making them ideal for use in applications that require precise timing.