TCXO Sine Wave Oscillators

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Part RoHS Manufacturer Oscillator Type Mounting Feature No. of Terminals Frequency Stability Frequency Adjustment (Mechanical) Aging Package Body Material Maximum Supply Voltage Technology Screening Level Output Impedance Maximum Supply Current Nominal Supply Voltage Power Supplies (V) Package Equivalence Code Sub-Category Physical Dimension Minimum Supply Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Nominal Operating Frequency Manufacturer Series Qualification Output Level Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

WT325DL0026.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

1 %

NO

1 PPM/FIRST YEAR

2.835 V

10000 ohm

2.7 V

3.2mm x 2.5mm x 1.2mm

2.565 V

75 Cel

-30 Cel

26 MHz

.8 V

JT255FR0016.369000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

1.5 %

NO

1 PPM/FIRST YEAR

CERAMIC

2.8875 V

10000 ohm

1.5 mA

2.75 V

2.75

DILCC4,.08,75

Other Oscillators

2.5mm x 2.0mm x 0.8mm

2.6125 V

85 Cel

-40 Cel

16.369 MHz

Not Qualified

.8 V

13 MHz

52 MHz

JT325GS0052.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2 %

NO

1 PPM/FIRST YEAR

2.52 V

10000 ohm

2.4 V

3.2mm x 2.5mm x 1.0mm

2.28 V

85 Cel

-40 Cel

52 MHz

.8 V

JT2551H0013.000000

Diodes Incorporated

WT255GD0019.200000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2 %

NO

1 PPM/FIRST YEAR

2.52 V

11000 ohm

2.4 V

2.5mm x 2.0mm x 0.8mm

2.28 V

70 Cel

-20 Cel

19.2 MHz

.8 V

WT255CY0016.367667

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

5 %

NO

1 PPM/FIRST YEAR

2.97 V

11000 ohm

2.8 V

2.5mm x 2.0mm x 0.8mm

2.66 V

75 Cel

-30 Cel

16.367667 MHz

.8 V

JT2552G0016.369000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

1 %

NO

1 PPM/FIRST YEAR

CERAMIC

2.625 V

10000 ohm

1.5 mA

2.5 V

2.5

DILCC4,.08,75

Other Oscillators

2.5mm x 2.0mm x 0.8mm

2.375 V

85 Cel

-30 Cel

16.369 MHz

Not Qualified

.8 V

13 MHz

52 MHz

JT2554B0052.000000

Diodes Incorporated

JT3251G0026.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

1 %

NO

1 PPM/FIRST YEAR

3.465 V

10000 ohm

3.3 V

3.2mm x 2.5mm x 1.0mm

3.135 V

85 Cel

-30 Cel

26 MHz

.8 V

JT325BF0040.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

.5 %

NO

1 PPM/FIRST YEAR

3.15 V

10000 ohm

3 V

3.2mm x 2.5mm x 1.0mm

2.85 V

85 Cel

-30 Cel

40 MHz

.8 V

JT3254K0052.000000

Diodes Incorporated

JT3252M0026.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

1.5 %

NO

1 PPM/FIRST YEAR

2.625 V

10000 ohm

2.5 V

3.2mm x 2.5mm x 1.0mm

2.375 V

75 Cel

-30 Cel

26 MHz

.8 V

WT2551F0025.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

.5 %

NO

1 PPM/FIRST YEAR

3.465 V

11000 ohm

3.3 V

2.5mm x 2.0mm x 0.8mm

3.135 V

85 Cel

-30 Cel

25 MHz

.8 V

WT325BW0025.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

5 %

NO

1 PPM/FIRST YEAR

3.15 V

10000 ohm

3 V

3.2mm x 2.5mm x 1.2mm

2.85 V

70 Cel

-20 Cel

25 MHz

.8 V

JT255CO0013.000000

Diodes Incorporated

CLIPPED SINE

JT255

WT255FL0010.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

1 %

NO

1 PPM/FIRST YEAR

2.8875 V

11000 ohm

2.75 V

2.5mm x 2.0mm x 0.8mm

2.6125 V

75 Cel

-30 Cel

10 MHz

.8 V

WT255EE0019.200000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.9925 V

11000 ohm

2.85 V

2.5mm x 2.0mm x 0.8mm

2.3575 V

70 Cel

-20 Cel

19.2 MHz

.8 V

JT255FN0016.369000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2 %

NO

1 PPM/FIRST YEAR

CERAMIC

2.8875 V

10000 ohm

1.5 mA

2.75 V

2.75

DILCC4,.08,75

Other Oscillators

2.5mm x 2.0mm x 0.8mm

2.6125 V

75 Cel

-30 Cel

16.369 MHz

Not Qualified

.8 V

13 MHz

52 MHz

JT325FT0040.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.8875 V

10000 ohm

2.75 V

3.2mm x 2.5mm x 1.0mm

2.6125 V

85 Cel

-40 Cel

40 MHz

.8 V

JT325EG0016.369000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

1 %

NO

1 PPM/FIRST YEAR

2.9925 V

10000 ohm

2.85 V

3.2mm x 2.5mm x 1.0mm

2.7075 V

85 Cel

-30 Cel

16.369 MHz

.8 V

JT325GY0010.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

5 %

NO

1 PPM/FIRST YEAR

2.52 V

10000 ohm

2.4 V

3.2mm x 2.5mm x 1.0mm

2.28 V

75 Cel

-30 Cel

10 MHz

.8 V

JT325CE0010.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.94 V

10000 ohm

2.8 V

3.2mm x 2.5mm x 1.0mm

2.66 V

70 Cel

-20 Cel

10 MHz

.8 V

JT325CT0025.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.94 V

10000 ohm

2.8 V

3.2mm x 2.5mm x 1.0mm

2.66 V

85 Cel

-40 Cel

25 MHz

.8 V

WT255CE0016.369000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.97 V

11000 ohm

2.8 V

2.5mm x 2.0mm x 0.8mm

2.66 V

70 Cel

-20 Cel

16.369 MHz

.8 V

WT3252Q0019.200000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

1 %

NO

1 PPM/FIRST YEAR

2.625 V

10000 ohm

2.5 V

3.2mm x 2.5mm x 1.2mm

2.375 V

85 Cel

-40 Cel

19.2 MHz

.8 V

WT325CC0010.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

1.5 %

NO

1 PPM/FIRST YEAR

2.94 V

10000 ohm

2.8 V

3.2mm x 2.5mm x 1.2mm

2.66 V

70 Cel

-20 Cel

10 MHz

.8 V

WT325BP0040.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

.5 %

NO

1 PPM/FIRST YEAR

3.15 V

10000 ohm

3 V

3.2mm x 2.5mm x 1.2mm

2.85 V

85 Cel

-40 Cel

40 MHz

.8 V

JT255EE0040.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

CERAMIC

2.9925 V

10000 ohm

2 mA

2.85 V

2.85

DILCC4,.08,75

Other Oscillators

2.5mm x 2.0mm x 0.8mm

2.7075 V

70 Cel

-20 Cel

40 MHz

Not Qualified

.8 V

13 MHz

52 MHz

JT325FI0026.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2 %

NO

1 PPM/FIRST YEAR

2.8875 V

10000 ohm

2.75 V

3.2mm x 2.5mm x 1.0mm

2.6125 V

85 Cel

-30 Cel

26 MHz

.8 V

JT325EQ0016.369000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

1 %

NO

1 PPM/FIRST YEAR

2.9925 V

10000 ohm

2.85 V

3.2mm x 2.5mm x 1.0mm

2.7075 V

85 Cel

-40 Cel

16.369 MHz

.8 V

JT3254D0026.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2 %

NO

1 PPM/FIRST YEAR

1.575 V

10000 ohm

1.5 V

3.2mm x 2.5mm x 1.0mm

1.425 V

70 Cel

-20 Cel

26 MHz

.8 V

JT3252H0052.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

1.5 %

NO

1 PPM/FIRST YEAR

2.625 V

10000 ohm

2.5 V

3.2mm x 2.5mm x 1.0mm

2.375 V

85 Cel

-30 Cel

52 MHz

.8 V

JT255BZ0019.200000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

CERAMIC

1.5 mA

3 V

3

DILCC4,.08,75

Other Oscillators

85 Cel

-40 Cel

19.2 MHz

JT255

Not Qualified

13 MHz

52 MHz

WT255GQ0010.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

1 %

NO

1 PPM/FIRST YEAR

2.52 V

11000 ohm

2.4 V

2.5mm x 2.0mm x 0.8mm

2.28 V

85 Cel

-40 Cel

10 MHz

.8 V

WT255BA0026.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

.5 %

NO

1 PPM/FIRST YEAR

3.15 V

11000 ohm

3 V

2.5mm x 2.0mm x 0.8mm

2.85 V

70 Cel

-20 Cel

26 MHz

.8 V

WT325DY0025.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

5 %

NO

1 PPM/FIRST YEAR

2.835 V

10000 ohm

2.7 V

3.2mm x 2.5mm x 1.2mm

2.565 V

75 Cel

-30 Cel

25 MHz

.8 V

WT3253X0026.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

5 %

NO

1 PPM/FIRST YEAR

1.89 V

10000 ohm

1.8 V

3.2mm x 2.5mm x 1.2mm

1.71 V

85 Cel

-30 Cel

26 MHz

.8 V

JT255DJ0016.369000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

CERAMIC

2.835 V

10000 ohm

1.5 mA

2.7 V

2.7

DILCC4,.08,75

Other Oscillators

2.5mm x 2.0mm x 0.8mm

2.565 V

85 Cel

-30 Cel

16.369 MHz

Not Qualified

.8 V

13 MHz

52 MHz

JT255DG0019.200000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

1 %

NO

1 PPM/FIRST YEAR

CERAMIC

2.835 V

10000 ohm

1.5 mA

2.7 V

2.7

DILCC4,.08,75

Other Oscillators

2.5mm x 2.0mm x 0.8mm

2.565 V

85 Cel

-30 Cel

19.2 MHz

Not Qualified

.8 V

13 MHz

52 MHz

JT325FB0010.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

1 %

NO

1 PPM/FIRST YEAR

2.8875 V

10000 ohm

2.75 V

3.2mm x 2.5mm x 1.0mm

2.6125 V

70 Cel

-20 Cel

10 MHz

.8 V

JT325BM0025.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

1.5 %

NO

1 PPM/FIRST YEAR

3.15 V

10000 ohm

3 V

3.2mm x 2.5mm x 1.0mm

2.85 V

75 Cel

-30 Cel

25 MHz

.8 V

JT325GO0052.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

2.5 %

NO

1 PPM/FIRST YEAR

2.52 V

10000 ohm

2.4 V

3.2mm x 2.5mm x 1.0mm

2.28 V

75 Cel

-30 Cel

52 MHz

.8 V

JT325CP0019.200000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

.5 %

NO

1 PPM/FIRST YEAR

2.94 V

10000 ohm

2.8 V

3.2mm x 2.5mm x 1.0mm

2.66 V

85 Cel

-40 Cel

19.2 MHz

.8 V

WT2553P0025.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

.5 %

NO

1 PPM/FIRST YEAR

1.89 V

11000 ohm

1.8 V

2.5mm x 2.0mm x 0.8mm

1.71 V

85 Cel

-40 Cel

25 MHz

.8 V

WT325GL0016.367667

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

1 %

NO

1 PPM/FIRST YEAR

2.52 V

10000 ohm

2.4 V

3.2mm x 2.5mm x 1.2mm

2.28 V

75 Cel

-30 Cel

16.367667 MHz

.8 V

WT325DW0019.200000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

5 %

NO

1 PPM/FIRST YEAR

2.835 V

10000 ohm

2.7 V

3.2mm x 2.5mm x 1.2mm

2.565 V

70 Cel

-20 Cel

19.2 MHz

.8 V

WT3254F0040.000000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

.5 %

NO

1 PPM/FIRST YEAR

1.575 V

10000 ohm

1.5 V

3.2mm x 2.5mm x 1.2mm

1.425 V

85 Cel

-30 Cel

40 MHz

.8 V

JT255EX0019.200000

Diodes Incorporated

CLIPPED SINE

SURFACE MOUNT

4

5 %

NO

1 PPM/FIRST YEAR

CERAMIC

2.9925 V

10000 ohm

1.5 mA

2.85 V

2.85

DILCC4,.08,75

Other Oscillators

2.5mm x 2.0mm x 0.8mm

2.7075 V

85 Cel

-30 Cel

19.2 MHz

Not Qualified

.8 V

13 MHz

52 MHz

TCXO Sine Wave Oscillators

TCXO (Temperature Compensated Crystal Oscillator) sine wave oscillators are electronic devices that generate a stable sine wave signal for use in various applications, such as communication systems, test and measurement equipment, and frequency synthesizers. They use a crystal oscillator as a frequency reference and a temperature compensation circuit to stabilize the oscillator frequency.

The TCXO sine wave oscillator works by using a temperature compensation circuit to adjust the frequency of the crystal oscillator, compensating for changes in temperature that can affect the oscillator frequency. This results in a stable and accurate sine wave signal output.

An advantages of TCXO sine wave oscillators is their high stability and accuracy over a wide temperature range. They can generate sine wave signals with very low frequency drift and jitter, making them ideal for use in applications that require precise timing.