TCXO Sine Wave Oscillators

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Part	Manufacturer	Oscillator Type	Mounting Feature	No. of Terminals	Frequency Stability	Frequency Adjustment (Mechanical)	Aging	Package Body Material	Maximum Supply Voltage	Output Impedance	Maximum Supply Current	Nominal Supply Voltage	Power Supplies (V)	Package Equivalence Code	Sub-Category	Physical Dimension	Minimum Supply Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Nominal Operating Frequency	Manufacturer Series	Qualification	Output Level	Minimum Operating Frequency	Maximum Operating Frequency
JT255BC0052.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR		3.15 V	10000 ohm		3 V				2.5mm x 2.0mm x 0.8mm	2.85 V	70 Cel	-20 Cel	52 MHz			.8 V
JT3251M0016.369000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR		3.465 V	10000 ohm		3.3 V				3.2mm x 2.5mm x 1.0mm	3.135 V	75 Cel	-30 Cel	16.369 MHz			.8 V
WT255BD0016.367667	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		3.15 V	11000 ohm		3 V				2.5mm x 2.0mm x 0.8mm	2.85 V	70 Cel	-20 Cel	16.367667 MHz			.8 V
WT255BQ0026.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR		3.15 V	11000 ohm		3 V				2.5mm x 2.0mm x 0.8mm	2.85 V	85 Cel	-40 Cel	26 MHz			.8 V
WT325FM0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR		2.8875 V	10000 ohm		2.75 V				3.2mm x 2.5mm x 1.2mm	2.6125 V	75 Cel	-30 Cel	40 MHz			.8 V
WT3253S0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		1.89 V	10000 ohm		1.8 V				3.2mm x 2.5mm x 1.2mm	1.71 V	85 Cel	-40 Cel	25 MHz			.8 V
WT325BR0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR		3.15 V	10000 ohm		3 V				3.2mm x 2.5mm x 1.2mm	2.85 V	85 Cel	-40 Cel	25 MHz			.8 V
JT2554R0016.369000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR		1.575 V	10000 ohm		1.5 V				2.5mm x 2.0mm x 0.8mm	1.425 V	85 Cel	-40 Cel	16.369 MHz			.8 V
JT2553E0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	1.89 V	10000 ohm	1.5 mA	1.8 V	1.8	DILCC4,.08,75	Other Oscillators	2.5mm x 2.0mm x 0.8mm	1.71 V	70 Cel	-20 Cel	19.2 MHz		Not Qualified	.8 V	13 MHz	52 MHz
JT325DM0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR		2.835 V	10000 ohm		2.7 V				3.2mm x 2.5mm x 1.0mm	2.565 V	75 Cel	-30 Cel	19.2 MHz			.8 V
JT325EO0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2.5 %	NO	1 PPM/FIRST YEAR		2.9925 V	10000 ohm		2.85 V				3.2mm x 2.5mm x 1.0mm	2.7075 V	75 Cel	-30 Cel	10 MHz			.8 V
JT2552Y0013.000000	Diodes Incorporated
JT255EE0013.000000	Diodes Incorporated
WT255FQ0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1 %	NO	1 PPM/FIRST YEAR		2.8875 V	11000 ohm		2.75 V				2.5mm x 2.0mm x 0.8mm	2.6125 V	85 Cel	-40 Cel	25 MHz			.8 V
WT2552O0026.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2.5 %	NO	1 PPM/FIRST YEAR		2.625 V	11000 ohm		2.5 V				2.5mm x 2.0mm x 0.8mm	2.375 V	75 Cel	-30 Cel	26 MHz			.8 V
WT255BI0016.369000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		3.15 V	11000 ohm		3 V				2.5mm x 2.0mm x 0.8mm	2.85 V	85 Cel	-30 Cel	16.369 MHz			.8 V
WT325GR0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR		2.52 V	10000 ohm		2.4 V				3.2mm x 2.5mm x 1.2mm	2.28 V	85 Cel	-40 Cel	19.2 MHz			.8 V
WT325FN0016.369000	Diodes Incorporated
WT325DH0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR		2.835 V	10000 ohm		2.7 V				3.2mm x 2.5mm x 1.2mm	2.565 V	85 Cel	-30 Cel	10 MHz			.8 V
WT325EX0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR		2.9925 V	10000 ohm		2.85 V				3.2mm x 2.5mm x 1.2mm	2.7075 V	85 Cel	-30 Cel	10 MHz			.8 V
JT2552S0026.000000	Diodes Incorporated
JT2553W0026.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR	CERAMIC	1.89 V	10000 ohm	1.5 mA	1.8 V	1.8	DILCC4,.08,75	Other Oscillators	2.5mm x 2.0mm x 0.8mm	1.71 V	70 Cel	-20 Cel	26 MHz		Not Qualified	.8 V	13 MHz	52 MHz
JT255BM0016.367667	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.15 V	10000 ohm	1.5 mA	3 V	3	DILCC4,.08,75	Other Oscillators	2.5mm x 2.0mm x 0.8mm	2.85 V	75 Cel	-30 Cel	16.367667 MHz		Not Qualified	.8 V	13 MHz	52 MHz
JT255DX0016.369000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR	CERAMIC	2.835 V	10000 ohm	1.5 mA	2.7 V	2.7	DILCC4,.08,75	Other Oscillators	2.5mm x 2.0mm x 0.8mm	2.565 V	85 Cel	-30 Cel	16.369 MHz		Not Qualified	.8 V	13 MHz	52 MHz
JT2553A0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	1.89 V	10000 ohm	1.5 mA	1.8 V	1.8	DILCC4,.08,75	Other Oscillators	2.5mm x 2.0mm x 0.8mm	1.71 V	70 Cel	-20 Cel	19.2 MHz		Not Qualified	.8 V	13 MHz	52 MHz
JT255GH0052.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR		2.52 V	10000 ohm		2.4 V				2.5mm x 2.0mm x 0.8mm	2.28 V	85 Cel	-30 Cel	52 MHz			.8 V
JT3254J0010.000000	Diodes Incorporated
JT325BS0052.000000	Diodes Incorporated
JT325EE0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2.5 %	NO	1 PPM/FIRST YEAR		2.9925 V	10000 ohm		2.85 V				3.2mm x 2.5mm x 1.0mm	2.7075 V	70 Cel	-20 Cel	19.2 MHz			.8 V
JT325FN0026.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.8875 V	10000 ohm		2.75 V				3.2mm x 2.5mm x 1.0mm	2.6125 V	75 Cel	-30 Cel	26 MHz			.8 V
JT255GB0013.000000	Diodes Incorporated	CLIPPED SINE																			JT255
WT255GM0016.369000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR		2.52 V	11000 ohm		2.4 V				2.5mm x 2.0mm x 0.8mm	2.28 V	75 Cel	-30 Cel	16.369 MHz			.8 V
WT255BR0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR		3.15 V	11000 ohm		3 V				2.5mm x 2.0mm x 0.8mm	2.85 V	85 Cel	-40 Cel	40 MHz			.8 V
WT3251D0026.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		3.465 V	10000 ohm		3.3 V				3.2mm x 2.5mm x 1.2mm	3.135 V	70 Cel	-20 Cel	26 MHz			.8 V
JT255BF0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR	CERAMIC	3.15 V	10000 ohm	2 mA	3 V	3	DILCC4,.08,75	Other Oscillators	2.5mm x 2.0mm x 0.8mm	2.85 V	85 Cel	-30 Cel	40 MHz		Not Qualified	.8 V	13 MHz	52 MHz
JT2554O0025.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2.5 %	NO	1 PPM/FIRST YEAR		1.575 V	10000 ohm		1.5 V				2.5mm x 2.0mm x 0.8mm	1.425 V	75 Cel	-30 Cel	25 MHz			.8 V
JT2554U0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR		1.575 V	10000 ohm		1.5 V				2.5mm x 2.0mm x 0.8mm	1.425 V	85 Cel	-40 Cel	40 MHz			.8 V
JT325FU0040.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR		2.8875 V	10000 ohm		2.75 V				3.2mm x 2.5mm x 1.0mm	2.6125 V	85 Cel	-40 Cel	40 MHz			.8 V
JT325FW0016.369000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR		2.8875 V	10000 ohm		2.75 V				3.2mm x 2.5mm x 1.0mm	2.6125 V	70 Cel	-20 Cel	16.369 MHz			.8 V
JT2554Z0013.000000	Diodes Incorporated	CLIPPED SINE																			JT255
WT255ES0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.9925 V	11000 ohm		2.85 V				2.5mm x 2.0mm x 0.8mm	2.3575 V	85 Cel	-40 Cel	10 MHz			.8 V
WT255GX0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	5 %	NO	1 PPM/FIRST YEAR		2.52 V	11000 ohm		2.4 V				2.5mm x 2.0mm x 0.8mm	2.28 V	85 Cel	-30 Cel	10 MHz			.8 V
WT325GN0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		2.52 V	10000 ohm		2.4 V				3.2mm x 2.5mm x 1.2mm	2.28 V	75 Cel	-30 Cel	19.2 MHz			.8 V
WT3251D0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	2 %	NO	1 PPM/FIRST YEAR		3.465 V	10000 ohm		3.3 V				3.2mm x 2.5mm x 1.2mm	3.135 V	70 Cel	-20 Cel	10 MHz			.8 V
JT255DP0019.200000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR		2.835 V	10000 ohm		2.7 V				2.5mm x 2.0mm x 0.8mm	2.565 V	85 Cel	-40 Cel	19.2 MHz			.8 V
JT255BH0052.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	1.5 %	NO	1 PPM/FIRST YEAR		3.15 V	10000 ohm		3 V				2.5mm x 2.0mm x 0.8mm	2.85 V	85 Cel	-30 Cel	52 MHz			.8 V
JT255CA0010.000000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR		2.94 V	10000 ohm		2.8 V				2.5mm x 2.0mm x 0.8mm	2.66 V	70 Cel	-20 Cel	10 MHz			.8 V
JT325BK0010.240000	Diodes Incorporated	CLIPPED SINE	SURFACE MOUNT	4	.5 %	NO	1 PPM/FIRST YEAR		3.15 V	10000 ohm		3 V				3.2mm x 2.5mm x 1.0mm	2.85 V	75 Cel	-30 Cel	10.24 MHz			.8 V

TCXO (Temperature Compensated Crystal Oscillator) sine wave oscillators are electronic devices that generate a stable sine wave signal for use in various applications, such as communication systems, test and measurement equipment, and frequency synthesizers. They use a crystal oscillator as a frequency reference and a temperature compensation circuit to stabilize the oscillator frequency.

The TCXO sine wave oscillator works by using a temperature compensation circuit to adjust the frequency of the crystal oscillator, compensating for changes in temperature that can affect the oscillator frequency. This results in a stable and accurate sine wave signal output.

An advantages of TCXO sine wave oscillators is their high stability and accuracy over a wide temperature range. They can generate sine wave signals with very low frequency drift and jitter, making them ideal for use in applications that require precise timing.