30 % XO Clock Oscillators 181

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Part RoHS Manufacturer Oscillator Type Mounting Feature No. of Terminals Frequency Stability Frequency Adjustment (Mechanical) Aging Package Body Material Maximum Supply Voltage Technology Screening Level Output Load Maximum Supply Current Nominal Supply Voltage Power Supplies (V) Package Equivalence Code Maximum Rise Time Sub-Category Physical Dimension Minimum Supply Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish Nominal Operating Frequency Maximum Fall Time Maximum Symmetry (%) Manufacturer Series Qualification Maximum Output Low Current Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

ASEAIG-16.000MHZ-X-K-S-T

Abracon

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

3.465 V

CMOS

15 pF

7 mA

3.3 V

4 ms

3.2mm x 2.5mm x 1.2mm

3.135 V

105 Cel

-40 Cel

16 MHz

4 ns

55/45

TRI-STATE; ENABLE/DISABLE FUNCTION; AEC-Q200; TS16949

ASFL3-24.000MHZ-EK-T

Abracon

CMOS

SURFACE MOUNT

4

30 %

NO

1.98 V

15 pF

1.8 V

6 ms

5.0mm x 3.2mm x 1.1mm

1.62 V

70 Cel

-20 Cel

24 MHz

6 ns

40/60

TRI-STATE; ENABLE/DISABLE FUNCTION; TR, 13 INCH

ASFL3-32.768MHZ-EK-T

Abracon

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

1.98 V

15 pF

5 mA

1.8 V

1.8

DILCC4,.12

6 ms

Other Oscillators

5.0mm x 3.2mm x 1.1mm

1.62 V

70 Cel

-20 Cel

32.768 MHz

6 ns

40/60

Not Qualified

TRI-STATE; ENABLE/DISABLE FUNCTION; TR, 13 INCH

.5 MHz

125 MHz

ASTMHTA-12.000MHZ-AK-E

Abracon

LVCMOS

SURFACE MOUNT

4

30 %

NO

3.63 V

15 pF

3 ms

2.0mm x 1.6mm x 0.75mm

2.25 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

12 MHz

3 ns

55/45

ENABLE/DISABLE FUNCTION; BULK

e4

MC2520Z10.0000C19XSH

Kyocera

CMOS

SURFACE MOUNT

4

30 %

NO

AEC-Q100/200

15 pF

6.5 mA

3.3 V

LCC4,.08X.1,63/47

2.5 ms

2.5mm x 2.0mm x 0.8mm

125 Cel

-40 Cel

Gold (Au) - with Nickel (Ni) barrier

10 MHz

2.5 ns

45/55

4 Amp

SUPPLY VOLTAGE 1.8V & 2.5V ALSO AVAILABLE

e4

ASD-12.000MHZ-L-K-S-T

Abracon

HCMOS

SURFACE MOUNT

4

30 %

NO

3.465 V

15 pF

3.3 V

7 ms

2.5mm x 2.0mm x 1.0mm

3.135 V

85 Cel

-40 Cel

Gold (Au) - electroplated

12 MHz

7 ns

45/55

TRI-STATE; STAND-BY; TAPE AND REEL

e4

ASFL1-14.31818MHZ-EK-T

Abracon

HCMOS/TTL

SURFACE MOUNT

4

30 %

NO

3.63 V

5 TTL, 15 pF

15 mA

3.3 V

DILCC4,.12,98

10 ms

5mm x 3.2mm x 1.3mm

2.97 V

70 Cel

-20 Cel

GOLD OVER NICKEL

14.31818 MHz

10 ns

40/60

TRI-STATE; ENABLE/DISABLE FUNCTION

e4

ASFL3-20.000MHZ-EK-T

Abracon

CMOS

SURFACE MOUNT

4

30 %

NO

1.98 V

15 pF

1.8 V

6 ms

5.0mm x 3.2mm x 1.1mm

1.62 V

70 Cel

-20 Cel

20 MHz

6 ns

40/60

TRI-STATE; TAPE AND REEL

ASFL3-3.6864MHZ-EK-T

Abracon

CMOS

SURFACE MOUNT

4

30 %

NO

1.98 V

15 pF

1.8 V

10 ms

5.0mm x 3.2mm x 1.1mm

1.62 V

70 Cel

-20 Cel

3.6864 MHz

10 ns

40/60

TRI-STATE; ENABLE/DISABLE FUNCTION; TR, 13 INCH

CA20C2404GMT

Cts

HCMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

1.89 V

HCMOS

AEC-Q200

15 pF

15 mA

1.8 V

LCC4,.06X.08,50/38

7 ms

2.0mm x 1.6mm x 0.8mm

1.71 V

105 Cel

-40 Cel

Gold Flash (Au) - with Nickel (Ni) barrier

24 MHz

7 ns

55/45

4 Amp

STANDBY; ENABLE/DISABLE FUNCTION

CA20C2504GMT

Cts

HCMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

1.89 V

HCMOS

AEC-Q200

15 pF

15 mA

1.8 V

LCC4,.06X.08,50/38

7 ms

2.0mm x 1.6mm x 0.8mm

1.71 V

105 Cel

-40 Cel

Gold Flash (Au) - with Nickel (Ni) barrier

25 MHz

7 ns

55/45

4 Amp

STANDBY; ENABLE/DISABLE FUNCTION

CA25C2004GLT

Cts

HCMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

3.465 V

HCMOS

AEC-Q200

15 pF

20 mA

3.3 V

7 ms

2.5mm x 2.0mm x 1.0mm

3.135 V

105 Cel

-40 Cel

GOLD OVER NICKEL

20 MHz

7 ns

55/45

8 Amp

STANDBY; ENABLE/DISABLE FUNCTION

e4

ECS-2520Q-18-270-DP-TR

Ecs International

HCMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

1.89 V

AEC-Q200

15 pF

3 mA

1.8 V

10 ms

2.5mmx2mmx0.8mm

1.71 V

105 Cel

-40 Cel

Gold (Au)

27 MHz

10 ns

45/55

TRI-STATE; ENABLE/DISABLE FUNCTION; AEC-Q200

e4

ECS-3225Q-18-240-DP-TR

Ecs International

HCMOS

SURFACE MOUNT

4

30 %

NO

1.89 V

15 pF

1.8 V

10 ms

3.2mm x 2.5mm x 0.9mm

1.71 V

105 Cel

-40 Cel

Gold (Au)

24 MHz

10 ns

45/55

AEC-Q200; TRI-STATE; ENABLE/DISABLE FUNCTION; TR, 7 INCH

e4

ECS-327KE-TR

Ecs International

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

15 pF

.0015 mA

3.3 V

3.3

LCC4,.09X.12,86/63

200 ms

Other Oscillators

3.2mm x 2.5mm x 1.0mm

85 Cel

-40 Cel

GOLD

.032768 MHz

200 ns

60/40

Not Qualified

TRI-STATE FUNCTION; ENABLE/DISABLE FUNCTION; TAPE AND REEL; OPERATING TEMP -20 +70 ALSO AVAILABLE

e4

HX7011C0025.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

3.465 V

15 pF

3.3 V

8 ms

7.0mm x 5.0mm x 1.4mm

3.135 V

105 Cel

-40 Cel

25 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

LFSPXO071976CUTT

Iqd Frequency Products

CMOS

SURFACE MOUNT

4

30 %

NO

1.98 V

15 pF

1.8 V

200 ms

1.6mm x 1.2mm x 0.7mm

1.62 V

70 Cel

-20 Cel

.032768 MHz

200 ns

45/55

STANDBY; ENABLE/DISABLE FUNCTION; TAPE

SIT8103AI-28-33E-25.00000Y

Sitime

LVCMOS

SURFACE MOUNT

30 %

NO

3.63 V

15 pF

3.3 V

2 ms

3.2mm x 2.5mm x 0.75mm

2.97 V

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD

25 MHz

2 ns

55/45

ENABLE/DISABLE FUNCTION; ALSO COMPATIBLE WITH LVTTL O/P; TR

e4

SIT8924AA-38-33E-2.048000

Sitime

LVCMOS

SURFACE MOUNT

30 %

NO

3.63 V

AEC-Q100

15 pF

3.3 V

5.0mm x 3.2mm x 0.75mm

2.97 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

2.048 MHz

55/45

AEC-Q100; ENABLE/DISABLE FUNCTION; ALSO COMPATIBLE WITH LVTTL OUTPUT; BULK

e4

SIT8924AA-38-33E-2.048000X

Sitime

LVCMOS/TTL

SURFACE MOUNT

30 %

NO

3.63 V

AEC-Q100

15 pF

3.3 V

5.0mm x 3.2mm x 0.75mm

2.97 V

125 Cel

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

2.048 MHz

55/45

AEC-Q100; ENABLE/DISABLE FUNCTION; ALSO COMPATIBLE WITH LVTTL OUTPUT; TR

e4

X1G004241002011

Seiko Epson

LVDS

SURFACE MOUNT

6

30 %

NO

3.63 V

100 OHM

30 mA

.3 ms

3.2mm x 2.5mm x 1.05mm

2.25 V

85 Cel

-40 Cel

GOLD

125 MHz

.3 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION; DIFFERENTIAL OUTPUT

e4

X1G004241002311

Seiko Epson

LVDS

SURFACE MOUNT

6

30 %

NO

3.63 V

100 OHM

30 mA

.3 ms

3.2mm x 2.5mm x 1.05mm

2.25 V

85 Cel

-40 Cel

GOLD

100 MHz

.3 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION; DIFFERENTIAL OUTPUT

e4

X1G004241010511

Seiko Epson

LVDS

SURFACE MOUNT

6

30 %

NO

3.63 V

100 OHM

30 mA

.3 ms

3.2mm x 2.5mm x 1.05 mm

2.25 V

85 Cel

-40 Cel

GOLD

80 MHz

.3 ns

STANDBY; ENABLE/DISABLE FUNCTION; DIFFERENTIAL OUTPUT

e4

HX5012C0161.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

2.625 V

AEC-Q200

15 pF

40 mA

2.5 V

DILCC4,.2

4 ms

5.0mm x 3.2mm x 1.2mm

2.375 V

105 Cel

-40 Cel

161 MHz

4 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX3213B0161.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

1.89 V

AEC-Q200

15 pF

40 mA

1.8 V

LCC4,.1X.13,83/65

4 ms

3.2mm x 2.5mm x 1.0mm

1.71 V

100 Cel

-40 Cel

161 MHz

4 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX2511C0001.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

3.465 V

AEC-Q200

15 pF

20 mA

3.3 V

8 ms

2.5mm x 2.0mm x 0.9mm

3.135 V

105 Cel

-40 Cel

1 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX2011C0060.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

3.465 V

AEC-Q200

15 pF

20 mA

3.3 V

LCC4,.06X.08,50/38

8 ms

2.0mm x 1.6mm x 0.75mm

3.135 V

105 Cel

-40 Cel

60 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX2513B0001.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

1.89 V

AEC-Q200

15 pF

20 mA

1.8 V

8 ms

2.5mm x 2.0mm x 0.9mm

1.71 V

100 Cel

-40 Cel

1 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX5013B0001.750000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

1.89 V

AEC-Q200

15 pF

20 mA

1.8 V

DILCC4,.12

8 ms

5.0mm x 3.2mm x 1.2mm

1.71 V

100 Cel

-40 Cel

1.75 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX5011B0001.750000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

3.465 V

AEC-Q200

15 pF

20 mA

3.3 V

DILCC4,.2

8 ms

5.0mm x 3.2mm x 1.2mm

3.135 V

100 Cel

-40 Cel

1.75 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX3212B0161.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

2.625 V

AEC-Q200

15 pF

40 mA

2.5 V

8 ms

3.2mm x 2.5mm x 1.0mm

2.375 V

100 Cel

-40 Cel

161 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX5013B0161.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

1.89 V

AEC-Q200

15 pF

40 mA

1.8 V

DILCC4,.12

4 ms

5.0mm x 3.2mm x 1.2mm

1.71 V

100 Cel

-40 Cel

161 MHz

4 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

FNSURV054

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

3.63 V

15 pF

20 mA

3.3 V

3.3

DILCC4,.2,200

5 ms

Other Oscillators

7.0mm x 5.0mm x 1.4mm

2.97 V

70 Cel

-20 Cel

GOLD

54 MHz

5 ns

55/45

FNSURV054

Not Qualified

ENABLE/DISABLE FUNCTION; TAPE AND REEL

e4

HX2512B0001.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

2.625 V

AEC-Q200

15 pF

20 mA

2.5 V

8 ms

2.5mm x 2.0mm x 0.9mm

2.375 V

100 Cel

-40 Cel

1 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX2512C0162.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

2.625 V

AEC-Q200

15 pF

40 mA

2.5 V

4 ms

2.5mm x 2.0mm x 0.9mm

2.375 V

105 Cel

-40 Cel

162 MHz

4 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX2512C0001.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

2.625 V

AEC-Q200

15 pF

20 mA

2.5 V

8 ms

2.5mm x 2.0mm x 0.9mm

2.375 V

105 Cel

-40 Cel

1 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX2013B0001.750000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

1.89 V

AEC-Q200

15 pF

20 mA

1.8 V

LCC4,.06X.08,50/38

8 ms

2mm x 1.6mm x 0.75mm

1.71 V

100 Cel

-40 Cel

1.75 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX3212B0001.750000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

2.625 V

AEC-Q200

15 pF

20 mA

2.5 V

8 ms

3.2mm x 2.5mm x 1.0mm

2.375 V

100 Cel

-40 Cel

1.75 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX2013C0060.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

1.89 V

AEC-Q200

15 pF

20 mA

1.8 V

LCC4,.06X.08,50/38

8 ms

2mm x 1.6mm x 0.75mm

1.71 V

105 Cel

-40 Cel

60 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX3211C0001.750000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

3.465 V

AEC-Q200

15 pF

20 mA

3.3 V

8 ms

3.2mm x 2.5mm x 1.0mm

3.135 V

105 Cel

-40 Cel

1.75 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX5012B0161.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

2.625 V

AEC-Q200

15 pF

40 mA

2.5 V

DILCC4,.2

4 ms

5.0mm x 3.2mm x 1.2mm

2.375 V

100 Cel

-40 Cel

161 MHz

4 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX2011C0001.750000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

3.465 V

AEC-Q200

15 pF

20 mA

3.3 V

LCC4,.06X.08,50/38

8 ms

2.0mm x 1.6mm x 0.75mm

3.135 V

105 Cel

-40 Cel

1.75 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX3212C0161.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

2.625 V

AEC-Q200

15 pF

40 mA

2.5 V

8 ms

3.2mm x 2.5mm x 1.0mm

2.375 V

105 Cel

-40 Cel

161 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX3222C0025.000000

Diodes Incorporated

LVPECL

SURFACE MOUNT

6

30 %

NO

CERAMIC

2.625 V

AEC-Q200

50 OHM

80 mA

2.5 V

.85 ms

3.2mmx2.5mmx0.9mm

2.375 V

105 Cel

-40 Cel

25 MHz

.85 ns

55/45

ENABLE/DISABLE FUNCTION

HX2512B0162.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

2.625 V

AEC-Q200

15 pF

40 mA

2.5 V

4 ms

2.5mm x 2.0mm x 0.9mm

2.375 V

100 Cel

-40 Cel

162 MHz

4 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX3211B0161.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

3.465 V

AEC-Q200

15 pF

40 mA

3.3 V

8 ms

3.2mm x 2.5mm x 1.0mm

3.135 V

100 Cel

-40 Cel

161 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

HX3221C0025.000000

Diodes Incorporated

LVPECL

SURFACE MOUNT

6

30 %

NO

CERAMIC

3.465 V

AEC-Q200

50 OHM

80 mA

3.3 V

.85 ms

3.2mmx2.5mmx0.9mm

3.135 V

105 Cel

-40 Cel

25 MHz

.85 ns

55/45

ENABLE/DISABLE FUNCTION

HX2513C0001.000000

Diodes Incorporated

CMOS

SURFACE MOUNT

4

30 %

NO

CERAMIC

1.89 V

AEC-Q200

15 pF

20 mA

1.8 V

8 ms

2.5mm x 2.0mm x 0.9mm

1.71 V

105 Cel

-40 Cel

1 MHz

8 ns

55/45

STANDBY; ENABLE/DISABLE FUNCTION

XO Clock Oscillators

Crystal Oscillator (XO) Clock Oscillators are electronic devices that generate a stable clock signal with a fixed frequency. They use a quartz crystal resonator as the frequency-determining element, which provides a stable and accurate frequency over a wide temperature range.

One of the main advantages of XO Clock Oscillators is their ability to generate a stable and precise clock signal with a fixed frequency. This makes them ideal for use in applications that require precise timing, such as in digital signal processing, telecommunications, and scientific research.

XO Clock Oscillators offer a low phase noise, which is important in applications that require a clean and stable clock signal. They are capable of generating frequencies ranging from a few kilohertz to several hundred megahertz, making them suitable for use in various electronic circuits.

Additionally, XO Clock Oscillators have a relatively simple design and are easy to integrate into electronic systems. They are available in a range of package sizes and configurations, allowing them to be used in various applications, including in communication systems, network equipment, and instrumentation.