30 % XO Clock Oscillators 181

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Part	Manufacturer	Oscillator Type	Mounting Feature	No. of Terminals	Frequency Stability	Frequency Adjustment (Mechanical)	Package Body Material	Maximum Supply Voltage	Screening Level	Output Load	Maximum Supply Current	Nominal Supply Voltage	Power Supplies (V)	Package Equivalence Code	Maximum Rise Time	Sub-Category	Physical Dimension	Minimum Supply Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	Nominal Operating Frequency	Maximum Fall Time	Maximum Symmetry (%)	Manufacturer Series	Qualification	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HX5011C0001.750000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	3.465 V	AEC-Q200	15 pF	20 mA	3.3 V		DILCC4,.2	8 ms		5.0mm x 3.2mm x 1.2mm	3.135 V	105 Cel	-40 Cel		1.75 MHz	8 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
FNSURV027	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	3.63 V		15 pF	10 mA	3.3 V	3.3	DILCC4,.2,200	5 ms	Other Oscillators	7.0mm x 5.0mm x 1.4mm	2.97 V	70 Cel	-20 Cel	GOLD	27 MHz	5 ns	55/45	FNSURV027	Not Qualified	ENABLE/DISABLE FUNCTION; TAPE AND REEL	e4
HX3222B0025.000000	Diodes Incorporated	LVPECL	SURFACE MOUNT	6	30 %	NO	CERAMIC	2.625 V	AEC-Q200	50 OHM	80 mA	2.5 V			.85 ms		3.2mmx2.5mmx0.9mm	2.375 V	100 Cel	-40 Cel		25 MHz	.85 ns	55/45			ENABLE/DISABLE FUNCTION
HX7011C0020.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO		3.465 V		15 pF		3.3 V			8 ms		7.0mm x 5.0mm x 1.4mm	3.135 V	105 Cel	-40 Cel		20 MHz	8 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX2513C0135.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	1.89 V	AEC-Q200	15 pF	40 mA	1.8 V			4 ms		2.5mm x 2.0mm x 0.9mm	1.71 V	105 Cel	-40 Cel		135 MHz	4 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX5012B0001.750000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	2.625 V	AEC-Q200	15 pF	20 mA	2.5 V		DILCC4,.2	8 ms		5.0mm x 3.2mm x 1.2mm	2.375 V	100 Cel	-40 Cel		1.75 MHz	8 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX3221B0161.000000	Diodes Incorporated	LVPECL	SURFACE MOUNT	6	30 %	NO	CERAMIC	3.465 V	AEC-Q200	50 OHM	80 mA	3.3 V			.85 ms		3.2mmx2.5mmx0.9mm	3.135 V	100 Cel	-40 Cel		161 MHz	.85 ns	55/45			ENABLE/DISABLE FUNCTION
HX5013C0161.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	1.89 V	AEC-Q200	15 pF	40 mA	1.8 V		DILCC4,.12	4 ms		5.0mm x 3.2mm x 1.2mm	1.71 V	105 Cel	-40 Cel		161 MHz	4 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX2011B0060.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	3.465 V	AEC-Q200	15 pF	20 mA	3.3 V		LCC4,.06X.08,50/38	8 ms		2.0mm x 1.6mm x 0.75mm	3.135 V	100 Cel	-40 Cel		60 MHz	8 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX3213C0161.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	1.89 V	AEC-Q200	15 pF	40 mA	1.8 V		LCC4,.1X.13,83/65	4 ms		3.2mm x 2.5mm x 1.0mm	1.71 V	105 Cel	-40 Cel		161 MHz	4 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX2012C0060.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	2.625 V	AEC-Q200	15 pF	20 mA	2.5 V		LCC4,.06X.08,50/38	8 ms		2.0mm x 1.6mm x 0.75mm	2.375 V	105 Cel	-40 Cel		60 MHz	8 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX5011B0161.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	3.465 V	AEC-Q200	15 pF	40 mA	3.3 V		DILCC4,.2	4 ms		5.0mm x 3.2mm x 1.2mm	3.135 V	100 Cel	-40 Cel		161 MHz	4 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX3221C0161.000000	Diodes Incorporated	LVPECL	SURFACE MOUNT	6	30 %	NO	CERAMIC	3.465 V	AEC-Q200	50 OHM	80 mA	3.3 V			.85 ms		3.2mmx2.5mmx0.9mm	3.135 V	105 Cel	-40 Cel		161 MHz	.85 ns	55/45			ENABLE/DISABLE FUNCTION
HX3221B0025.000000	Diodes Incorporated	LVPECL	SURFACE MOUNT	6	30 %	NO	CERAMIC	3.465 V	AEC-Q200	50 OHM	80 mA	3.3 V			.85 ms		3.2mmx2.5mmx0.9mm	3.135 V	100 Cel	-40 Cel		25 MHz	.85 ns	55/45			ENABLE/DISABLE FUNCTION
HX5011C0161.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	3.465 V	AEC-Q200	15 pF	40 mA	3.3 V		DILCC4,.2	4 ms		5.0mm x 3.2mm x 1.2mm	3.135 V	105 Cel	-40 Cel		161 MHz	4 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX5013C0001.750000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	1.89 V	AEC-Q200	15 pF	20 mA	1.8 V		DILCC4,.12	8 ms		5.0mm x 3.2mm x 1.2mm	1.71 V	105 Cel	-40 Cel		1.75 MHz	8 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX3222C0161.000000	Diodes Incorporated	LVPECL	SURFACE MOUNT	6	30 %	NO	CERAMIC	2.625 V	AEC-Q200	50 OHM	80 mA	2.5 V			.85 ms		3.2mmx2.5mmx0.9mm	2.375 V	105 Cel	-40 Cel		161 MHz	.85 ns	55/45			ENABLE/DISABLE FUNCTION
HX2511C0162.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	3.465 V	AEC-Q200	15 pF	40 mA	3.3 V			4 ms		2.5mm x 2.0mm x 0.9mm	3.135 V	105 Cel	-40 Cel		162 MHz	4 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX3222B0161.000000	Diodes Incorporated	LVPECL	SURFACE MOUNT	6	30 %	NO	CERAMIC	2.625 V	AEC-Q200	50 OHM	80 mA	2.5 V			.85 ms		3.2mmx2.5mmx0.9mm	2.375 V	100 Cel	-40 Cel		161 MHz	.85 ns	55/45			ENABLE/DISABLE FUNCTION
HX2013C0001.750000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	1.89 V	AEC-Q200	15 pF	20 mA	1.8 V		LCC4,.06X.08,50/38	8 ms		2mm x 1.6mm x 0.75mm	1.71 V	105 Cel	-40 Cel		1.75 MHz	8 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX3212C0001.750000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	2.625 V	AEC-Q200	15 pF	20 mA	2.5 V			8 ms		3.2mm x 2.5mm x 1.0mm	2.375 V	105 Cel	-40 Cel		1.75 MHz	8 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX3211C0161.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	3.465 V	AEC-Q200	15 pF	40 mA	3.3 V			8 ms		3.2mm x 2.5mm x 1.0mm	3.135 V	105 Cel	-40 Cel		161 MHz	8 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX3213C0001.750000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	1.89 V	AEC-Q200	15 pF	20 mA	1.8 V		LCC4,.1X.13,83/65	8 ms		3.2mm x 2.5mm x 1.0mm	1.71 V	105 Cel	-40 Cel		1.75 MHz	8 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX2012B0060.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	2.625 V	AEC-Q200	15 pF	20 mA	2.5 V		LCC4,.06X.08,50/38	8 ms		2.0mm x 1.6mm x 0.75mm	2.375 V	100 Cel	-40 Cel		60 MHz	8 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX2012B0001.750000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	2.625 V	AEC-Q200	15 pF	20 mA	2.5 V		LCC4,.06X.08,50/38	8 ms		2.0mm x 1.6mm x 0.75mm	2.375 V	100 Cel	-40 Cel		1.75 MHz	8 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX3211B0001.750000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	3.465 V	AEC-Q200	15 pF	20 mA	3.3 V			8 ms		3.2mm x 2.5mm x 1.0mm	3.135 V	100 Cel	-40 Cel		1.75 MHz	8 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX3213B0001.750000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	1.89 V	AEC-Q200	15 pF	20 mA	1.8 V		LCC4,.1X.13,83/65	8 ms		3.2mm x 2.5mm x 1.0mm	1.71 V	100 Cel	-40 Cel		1.75 MHz	8 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX5012C0001.750000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	2.625 V	AEC-Q200	15 pF	20 mA	2.5 V		DILCC4,.2	8 ms		5.0mm x 3.2mm x 1.2mm	2.375 V	105 Cel	-40 Cel		1.75 MHz	8 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX2013B0060.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	1.89 V	AEC-Q200	15 pF	20 mA	1.8 V		LCC4,.06X.08,50/38	8 ms		2mm x 1.6mm x 0.75mm	1.71 V	100 Cel	-40 Cel		60 MHz	8 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX2513B0135.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	1.89 V	AEC-Q200	15 pF	40 mA	1.8 V			4 ms		2.5mm x 2.0mm x 0.9mm	1.71 V	100 Cel	-40 Cel		135 MHz	4 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX2012C0001.750000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	2.625 V	AEC-Q200	15 pF	20 mA	2.5 V		LCC4,.06X.08,50/38	8 ms		2.0mm x 1.6mm x 0.75mm	2.375 V	105 Cel	-40 Cel		1.75 MHz	8 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX2511B0001.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	3.465 V	AEC-Q200	15 pF	20 mA	3.3 V			8 ms		2.5mm x 2.0mm x 0.9mm	3.135 V	100 Cel	-40 Cel		1 MHz	8 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX2011B0001.750000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	3.465 V	AEC-Q200	15 pF	20 mA	3.3 V		LCC4,.06X.08,50/38	8 ms		2.0mm x 1.6mm x 0.75mm	3.135 V	100 Cel	-40 Cel		1.75 MHz	8 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
HX2511B0162.000000	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	3.465 V	AEC-Q200	15 pF	40 mA	3.3 V			4 ms		2.5mm x 2.0mm x 0.9mm	3.135 V	100 Cel	-40 Cel		162 MHz	4 ns	55/45			STANDBY; ENABLE/DISABLE FUNCTION
FNSTB1027	Diodes Incorporated	CMOS	SURFACE MOUNT	4	30 %	NO	CERAMIC	3.63 V		15 pF	10 mA	3.3 V	3.3	DILCC4,.2,200	5 ms	Other Oscillators	7.0mm x 5.0mm x 1.4mm	2.97 V	70 Cel	-20 Cel	GOLD	27 MHz	5 ns	55/45	FNSTB1027	Not Qualified	ENABLE/DISABLE FUNCTION; TAPE AND REEL	e4
KK3270021	Diodes Incorporated	LVCMOS	SURFACE MOUNT	4	30 %	NO		3.63 V	MIL-STD-883	15 pF	1 mA	3.3 V		LCC4,.09X.12,83/63	130 ms		3.2mm x 2.5mm x 1.0mm	2.97 V	70 Cel	-20 Cel		.032768 MHz	130 ns	45/55			ENABLE/DISABLE FUNCTION
DS4212AN+	Maxim Integrated	LVPECL	SURFACE MOUNT	10	30 %	NO	CERAMIC	3.6 V			67 mA	3.3 V	3.3	LCC10,.12X.2,50/40		Other Oscillators	5.0mm x 3.2mm x 1.49mm	3 V	85 Cel	-40 Cel	Matte Tin (Sn)	212.5 MHz		55/45		Not Qualified		e3	.012 MHz	20 MHz

XO Clock Oscillators

Crystal Oscillator (XO) Clock Oscillators are electronic devices that generate a stable clock signal with a fixed frequency. They use a quartz crystal resonator as the frequency-determining element, which provides a stable and accurate frequency over a wide temperature range.

One of the main advantages of XO Clock Oscillators is their ability to generate a stable and precise clock signal with a fixed frequency. This makes them ideal for use in applications that require precise timing, such as in digital signal processing, telecommunications, and scientific research.

XO Clock Oscillators offer a low phase noise, which is important in applications that require a clean and stable clock signal. They are capable of generating frequencies ranging from a few kilohertz to several hundred megahertz, making them suitable for use in various electronic circuits.

Additionally, XO Clock Oscillators have a relatively simple design and are easy to integrate into electronic systems. They are available in a range of package sizes and configurations, allowing them to be used in various applications, including in communication systems, network equipment, and instrumentation.