Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Qorvo |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
GAN |
1 |
20 dBm |
3 |
70 mA |
COMPONENT |
-2.7,20 |
50 ohm |
25 dB |
13000 MHz |
18000 MHz |
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|
Qorvo |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
1 |
10 dBm |
10 |
900 mA |
COMPONENT |
4.5 |
SOLCC14,.28,42 |
50 ohm |
85 Cel |
30.5 dB |
-40 Cel |
Gold (Au) - with Nickel (Ni) barrier |
e4 |
2500 MHz |
2700 MHz |
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|
NXP Semiconductors |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
LDMOS |
1 |
25 dBm |
10 |
COMPONENT |
50 |
50 ohm |
150 Cel |
30.5 dB |
-55 Cel |
TIN |
e3 |
1030 MHz |
1090 MHz |
||||||||
NXP Semiconductors |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
1 |
10 dBm |
10 |
COMPONENT |
1.8,2.8,3.5 |
DIE OR CHIP |
50 ohm |
100 Cel |
-35 Cel |
824 MHz |
849 MHz |
||||||||||||
NXP Semiconductors |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
GAAS |
1 |
11 dBm |
10 |
COMPONENT |
1.8,32.8,3.5 |
DIE OR CHIP |
50 ohm |
100 Cel |
-35 Cel |
880 MHz |
915 MHz |
|||||||||||
|
NXP Semiconductors |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
LDMOS |
1 |
25 dBm |
10 |
COMPONENT |
50 |
50 ohm |
150 Cel |
30.5 dB |
-55 Cel |
TIN |
e3 |
1030 MHz |
1090 MHz |
||||||||
|
NXP Semiconductors |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
LDMOS |
1 |
25 dBm |
10 |
COMPONENT |
50 |
50 ohm |
150 Cel |
30.5 dB |
-55 Cel |
Tin (Sn) |
e3 |
1030 MHz |
1090 MHz |
||||||||
|
NXP Semiconductors |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
LDMOS |
1 |
25 dBm |
10 |
COMPONENT |
50 |
50 ohm |
150 Cel |
30.5 dB |
-55 Cel |
Tin (Sn) |
e3 |
1030 MHz |
1090 MHz |
||||||||
Infineon Technologies |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
GAAS |
2 |
COMPONENT |
3/5 |
SOP14(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
27 dB |
Tin/Lead (Sn/Pb) |
e0 |
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Infineon Technologies |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
GAAS |
10 dBm |
2.5 |
COMPONENT |
3 |
SOP14(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
28 dB |
Tin/Lead (Sn/Pb) |
e0 |
||||||||||||
Infineon Technologies |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
GAAS |
25 dBm |
1.9 |
COMPONENT |
3/5 |
SOP14(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
20.5 dB |
Tin/Lead (Sn/Pb) |
e0 |
1750 MHz |
1750 MHz |
||||||||||
|
Broadcom |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
2 |
485 mA |
3.4 |
SOLCC14,.16,30 |
RF/Microwave Amplifiers |
85 Cel |
-30 Cel |
||||||||||||||||
|
Broadcom |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
2 |
485 mA |
3.4 |
SOLCC14,.16,30 |
RF/Microwave Amplifiers |
85 Cel |
-30 Cel |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.