NXP Semiconductors - MMRF2010GNR1

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MMRF2010GNR1 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number MMRF2010GNR1
Description NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 14; Package Body Material: PLASTIC/EPOXY; Technology: LDMOS; Maximum Input Power (CW): 25 dBm;
Datasheet MMRF2010GNR1 Datasheet
In Stock399
NAME DESCRIPTION
Other Names: MMRF2010GNR1CT
MMRF2010GNR1DKR
935323765528
MMRF2010GNR1-ND
MMRF2010GNR1TR
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 1030 MHz
Terminal Finish: TIN
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Maximum Voltage Standing Wave Ratio: 10
No. of Terminals: 14
Maximum Input Power (CW): 25 dBm
Technology: LDMOS
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 150 Cel
Maximum Operating Frequency: 1090 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Gain: 30.5 dB
Power Supplies (V): 50
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