24 RF & Microwave Amplifiers 133

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

HMC962LC4TR

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

24

CERAMIC

GAAS

1

10 dBm

95 mA

COMPONENT

3.5

LCC24,.16SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

8 dB

-40 Cel

TUNGSTEN NICKEL GOLD

7500 MHz

26500 MHz

HMC816LP4ERTR

Analog Devices

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

2

126 mA

5

LCC24,.16SQ,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

HMC1131LC4TR

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

24

CERAMIC

GAAS

1

12 dBm

COMPONENT

5

LCC24,.16SQ,20

50 ohm

85 Cel

22 dB

-40 Cel

GOLD NICKEL

e4

24000 MHz

35000 MHz

HMC383LC4RTR

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

24

GAAS

1

10 dBm

135 mA

COMPONENT

5

LCC24,.16SQ,20

50 ohm

85 Cel

10 dB

-40 Cel

12000 MHz

30000 MHz

HMC505LP4ERTR

Analog Devices

SURFACE MOUNT

24

PLASTIC/EPOXY

BIPOLAR

1

3

LCC24,.16SQ,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

HMC760LC4B

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

24

CERAMIC

1

10 dBm

COMPONENT

2

LCC24,.16SQ,20

50 ohm

85 Cel

-40 Cel

TUNGSTEN NICKEL GOLD

5000 MHz

HMC505LP4RTR

Analog Devices

SURFACE MOUNT

24

PLASTIC/EPOXY

BIPOLAR

1

3

LCC24,.16SQ,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

HMC995LP5GETR

Analog Devices

WIDE BAND HIGH POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

1

7

LCC24,.2SQ,25

RF/Microwave Amplifiers

85 Cel

-40 Cel

HMC817LP4ETR

Analog Devices

NARROW BAND LOW POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

2

124 mA

3/5

LCC24,.16SQ,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

HMC504LC4BRTR

Analog Devices

SURFACE MOUNT

24

CERAMIC

GAAS

1

4

LCC24,.16SQ,20

RF/Microwave Amplifiers

85 Cel

-55 Cel

HMC772LC4TR

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

24

CERAMIC

GAAS

1

4

LCC24,.16SQ,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

TUNGSTEN NICKEL GOLD

HMC718LP4

Analog Devices

NARROW BAND LOW POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

2

-5 dBm

281 mA

COMPONENT

3/5

LCC24,.16SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

25 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

600 MHz

1400 MHz

HMC685LP4ETR

Analog Devices

NARROW BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

BICMOS

140 mA

5

LCC24,.16SQ,20

RF/Microwave Mixers

85 Cel

-40 Cel

MATTE TIN

e3

1700 MHz

2200 MHz

HMC633LC4

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

24

CERAMIC

GAAS

1

5 dBm

COMPONENT

5

LCC24,.16SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

25 dB

-40 Cel

GOLD OVER NICKEL

e4

5500 MHz

17000 MHz

HMC684LP4ETR

Analog Devices

WIDE BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

BICMOS

100 mA

5

LCC24,.16SQ,20

RF/Microwave Mixers

85 Cel

-40 Cel

MATTE TIN

e3

ADL8106XCEZ

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

24

PHEMT

1

1.5

COMPONENT

3

LCC24,.2SQ,25

50 ohm

85 Cel

21 dB

-40 Cel

20000 MHz

54000 MHz

MMZ38333BT1

NXP Semiconductors

NARROW BAND LOW POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

HYBRID

1

30 dBm

1.58

1200 mA

COMPONENT

5

LCC24,.16SQ,20

50 ohm

36.3 dB

TIN

e3

3400 MHz

3800 MHz

MMZ27333BT1

NXP Semiconductors

WIDE BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

HYBRID

1

10 dBm

1.55

COMPONENT

5

LCC24,.16SQ,20

50 ohm

34.8 dB

TIN

e3

1500 MHz

2700 MHz

MW7IC2020NT1

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

MOS

1

37 dBm

10

COMPONENT

28

LCC24,.3SQ,32

50 ohm

RF/Microwave Amplifiers

31 dB

TIN

e3

1805 MHz

2170 MHz

935361937528

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

1

20 dBm

10

COMPONENT

28

LCC24,.3SQ,32

50 ohm

150 Cel

29.7 dB

-40 Cel

Tin (Sn)

e3

2400 MHz

2500 MHz

935320796147

NXP Semiconductors

WIDE BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

HYBRID

1

10 dBm

1.55

COMPONENT

5

LCC24,.16SQ,20

50 ohm

34.8 dB

Tin (Sn)

e3

1500 MHz

2700 MHz

MW7IC915NT1

NXP Semiconductors

WIDE BAND HIGH POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

MOS

1

4.7 dBm

10

COMPONENT

28

LCC24,.3SQ,32

50 ohm

RF/Microwave Amplifiers

35 dB

TIN

e3

728 MHz

960 MHz

935325969147

NXP Semiconductors

WIDE BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

HYBRID

1

30 dBm

415 mA

COMPONENT

5

LCC24,.16SQ,20

50 ohm

23.5 dB

Tin (Sn)

e3

1500 MHz

2700 MHz

935337471147

NXP Semiconductors

NARROW BAND LOW POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

HYBRID

1

30 dBm

1.58

1200 mA

COMPONENT

5

LCC24,.16SQ,20

50 ohm

36.3 dB

Tin (Sn)

e3

3400 MHz

3800 MHz

CGB91

Infineon Technologies

NARROW BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

5

COMPONENT

3.7

LCC24,.17X.14,20

50 ohm

RF/Microwave Amplifiers

110 Cel

25 dB

-30 Cel

Tin/Lead (Sn/Pb)

e0

824 MHz

849 MHz

CGB191

Infineon Technologies

NARROW BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

5

COMPONENT

3.7

LCC24,.17X.14,20

50 ohm

RF/Microwave Amplifiers

110 Cel

24 dB

-30 Cel

Tin/Lead (Sn/Pb)

e0

1850 MHz

1910 MHz

TMD3438-1

Toshiba

NARROW BAND MEDIUM POWER

SURFACE MOUNT

24

CERAMIC

GAAS

7.5,-5

QFL24,.37SQ

RF/Microwave Amplifiers

Tin/Lead (Sn/Pb)

e0

F1420NLGK8

Renesas Electronics

NARROW BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

1

18 dBm

2

120 mA

COMPONENT

5

LCC24,.16SQ,20

50 ohm

105 Cel

16.4 dB

-40 Cel

TIN

HIGH RELIABILITY

e3

700 MHz

1100 MHz

F1421NLGK8

Renesas Electronics

NARROW BAND MEDIUM POWER

PANEL MOUNT

24

PLASTIC/EPOXY

1

18 dBm

2

153 mA

COMPONENT

5

50 ohm

105 Cel

18.8 dB

-40 Cel

Tin (Sn)

HIGH RELIABILITY

e3

1700 MHz

2200 MHz

F1431BNBGK8

Renesas Electronics

WIDE BAND MEDIUM POWER

SURFACE MOUNT

24

1

9 dBm

1.38

177 mA

COMPONENT

5

LCC24,.16SQ,20

50 ohm

105 Cel

11.7 dB

-40 Cel

TIN

e3

350 MHz

3000 MHz

F1431BNBGK

Renesas Electronics

WIDE BAND MEDIUM POWER

SURFACE MOUNT

24

1

9 dBm

1.38

177 mA

COMPONENT

5

LCC24,.16SQ,20

50 ohm

105 Cel

11.7 dB

-40 Cel

TIN

e3

350 MHz

3000 MHz

F1421NLGK

Renesas Electronics

NARROW BAND MEDIUM POWER

PANEL MOUNT

24

PLASTIC/EPOXY

1

18 dBm

2

153 mA

COMPONENT

5

50 ohm

105 Cel

18.8 dB

-40 Cel

Tin (Sn)

HIGH RELIABILITY

e3

1700 MHz

2200 MHz

F1420NLGK

Renesas Electronics

NARROW BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

1

18 dBm

2

120 mA

COMPONENT

5

LCC24,.16SQ,20

50 ohm

105 Cel

16.4 dB

-40 Cel

TIN

HIGH RELIABILITY

e3

700 MHz

1100 MHz

ALM-12224-TR1G

Broadcom

NARROW BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

1

5,28

LCC24(UNSPEC)

RF/Microwave Amplifiers

85 Cel

-40 Cel

ALM-12224-BLKG

Broadcom

NARROW BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

1

5,28

LCC24(UNSPEC)

RF/Microwave Amplifiers

85 Cel

-40 Cel

ALM-12124-BLKG

Broadcom

NARROW BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

1

5,28

LCC24(UNSPEC)

RF/Microwave Amplifiers

85 Cel

-40 Cel

ALM-12124-TR1G

Broadcom

NARROW BAND MEDIUM POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

GAAS

1

5,28

LCC24(UNSPEC)

RF/Microwave Amplifiers

85 Cel

-40 Cel

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.