Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
10 dBm |
95 mA |
COMPONENT |
3.5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
TUNGSTEN NICKEL GOLD |
7500 MHz |
26500 MHz |
|||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
2 |
126 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
12 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
22 dB |
-40 Cel |
GOLD NICKEL |
e4 |
24000 MHz |
35000 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
GAAS |
1 |
10 dBm |
135 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
10 dB |
-40 Cel |
12000 MHz |
30000 MHz |
||||||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
3 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
1 |
10 dBm |
COMPONENT |
2 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
TUNGSTEN NICKEL GOLD |
5000 MHz |
||||||||||||
Analog Devices |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
3 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||||
|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
7 |
LCC24,.2SQ,25 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
2 |
124 mA |
3/5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
4 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-55 Cel |
||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
4 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TUNGSTEN NICKEL GOLD |
||||||||||||||
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
2 |
-5 dBm |
281 mA |
COMPONENT |
3/5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
25 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
600 MHz |
1400 MHz |
||||||||
|
Analog Devices |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BICMOS |
140 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
1700 MHz |
2200 MHz |
|||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
5 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
25 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
5500 MHz |
17000 MHz |
|||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
BICMOS |
100 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Mixers |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
|||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
PHEMT |
1 |
1.5 |
COMPONENT |
3 |
LCC24,.2SQ,25 |
50 ohm |
85 Cel |
21 dB |
-40 Cel |
20000 MHz |
54000 MHz |
|||||||||||
|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
HYBRID |
1 |
30 dBm |
1.58 |
1200 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
36.3 dB |
TIN |
e3 |
3400 MHz |
3800 MHz |
||||||||
|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
HYBRID |
1 |
10 dBm |
1.55 |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
34.8 dB |
TIN |
e3 |
1500 MHz |
2700 MHz |
|||||||||
|
NXP Semiconductors |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
MOS |
1 |
37 dBm |
10 |
COMPONENT |
28 |
LCC24,.3SQ,32 |
50 ohm |
RF/Microwave Amplifiers |
31 dB |
TIN |
e3 |
1805 MHz |
2170 MHz |
||||||||
|
NXP Semiconductors |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
1 |
20 dBm |
10 |
COMPONENT |
28 |
LCC24,.3SQ,32 |
50 ohm |
150 Cel |
29.7 dB |
-40 Cel |
Tin (Sn) |
e3 |
2400 MHz |
2500 MHz |
||||||||
|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
HYBRID |
1 |
10 dBm |
1.55 |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
34.8 dB |
Tin (Sn) |
e3 |
1500 MHz |
2700 MHz |
|||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
MOS |
1 |
4.7 dBm |
10 |
COMPONENT |
28 |
LCC24,.3SQ,32 |
50 ohm |
RF/Microwave Amplifiers |
35 dB |
TIN |
e3 |
728 MHz |
960 MHz |
||||||||
|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
HYBRID |
1 |
30 dBm |
415 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
23.5 dB |
Tin (Sn) |
e3 |
1500 MHz |
2700 MHz |
|||||||||
|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
HYBRID |
1 |
30 dBm |
1.58 |
1200 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
36.3 dB |
Tin (Sn) |
e3 |
3400 MHz |
3800 MHz |
||||||||
Infineon Technologies |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
5 |
COMPONENT |
3.7 |
LCC24,.17X.14,20 |
50 ohm |
RF/Microwave Amplifiers |
110 Cel |
25 dB |
-30 Cel |
Tin/Lead (Sn/Pb) |
e0 |
824 MHz |
849 MHz |
|||||||||
Infineon Technologies |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
5 |
COMPONENT |
3.7 |
LCC24,.17X.14,20 |
50 ohm |
RF/Microwave Amplifiers |
110 Cel |
24 dB |
-30 Cel |
Tin/Lead (Sn/Pb) |
e0 |
1850 MHz |
1910 MHz |
|||||||||
Toshiba |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
7.5,-5 |
QFL24,.37SQ |
RF/Microwave Amplifiers |
Tin/Lead (Sn/Pb) |
e0 |
|||||||||||||||||
|
Renesas Electronics |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
1 |
18 dBm |
2 |
120 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
105 Cel |
16.4 dB |
-40 Cel |
TIN |
HIGH RELIABILITY |
e3 |
700 MHz |
1100 MHz |
||||||
|
Renesas Electronics |
NARROW BAND MEDIUM POWER |
PANEL MOUNT |
24 |
PLASTIC/EPOXY |
1 |
18 dBm |
2 |
153 mA |
COMPONENT |
5 |
50 ohm |
105 Cel |
18.8 dB |
-40 Cel |
Tin (Sn) |
HIGH RELIABILITY |
e3 |
1700 MHz |
2200 MHz |
|||||||
|
Renesas Electronics |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
1 |
9 dBm |
1.38 |
177 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
105 Cel |
11.7 dB |
-40 Cel |
TIN |
e3 |
350 MHz |
3000 MHz |
||||||||
|
Renesas Electronics |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
1 |
9 dBm |
1.38 |
177 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
105 Cel |
11.7 dB |
-40 Cel |
TIN |
e3 |
350 MHz |
3000 MHz |
||||||||
|
Renesas Electronics |
NARROW BAND MEDIUM POWER |
PANEL MOUNT |
24 |
PLASTIC/EPOXY |
1 |
18 dBm |
2 |
153 mA |
COMPONENT |
5 |
50 ohm |
105 Cel |
18.8 dB |
-40 Cel |
Tin (Sn) |
HIGH RELIABILITY |
e3 |
1700 MHz |
2200 MHz |
|||||||
|
Renesas Electronics |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
1 |
18 dBm |
2 |
120 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
105 Cel |
16.4 dB |
-40 Cel |
TIN |
HIGH RELIABILITY |
e3 |
700 MHz |
1100 MHz |
||||||
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
5,28 |
LCC24(UNSPEC) |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
5,28 |
LCC24(UNSPEC) |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
5,28 |
LCC24(UNSPEC) |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
5,28 |
LCC24(UNSPEC) |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.