24 RF & Microwave Amplifiers 133

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
ADL9005ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	PHEMT	1	22 dBm	1.49		COMPONENT	5	LCC24,.16SQ,20	50 ohm		85 Cel	17 dB	-40 Cel				10 MHz	26500 MHz
HMC608LC4TR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1			350 mA		5	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	TUNGSTEN NICKEL GOLD
ADL9005ACPZN	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	PHEMT	1	22 dBm	1.49		COMPONENT	5	LCC24,.16SQ,20	50 ohm		85 Cel	17 dB	-40 Cel				10 MHz	26500 MHz
HMC963LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	0 dBm		65 mA	COMPONENT	3.5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16.5 dB	-40 Cel	TUNGSTEN NICKEL GOLD			6000 MHz	26500 MHz
HMC1082LP4ETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1					5	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	MATTE TIN		e3
HMC1082LP4E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	20 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	MATTE TIN		e3	5500 MHz	18000 MHz
HMC564LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	20 dBm		75 mA	COMPONENT	3	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-40 Cel	GOLD NICKEL		e4	7000 MHz	14000 MHz
HMC952ALP5GE	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	24 dBm			COMPONENT	6	LCC24,.2SQ,25	50 ohm		85 Cel	28 dB	-55 Cel	Matte Tin (Sn) - annealed		e3	8000 MHz	14000 MHz
HMC960LP4ETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY		1				COMPONENT	5	LCC24,.16SQ,20			85 Cel	0 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	0 MHz	100 MHz
HMC635LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1					5	LCC24,.16SQ,20		RF/Microwave Amplifiers	70 Cel		-55 Cel
HMC505LP4E	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR	1		2		COMPONENT	3	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	MATTE TIN	LOW NOISE	e3	6800 MHz	7400 MHz
MW7IC008NT1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	MOS	2	38 dBm	10		COMPONENT	28	LCC24,.3SQ,32	50 ohm	RF/Microwave Amplifiers		21.5 dB		MATTE TIN		e3	100 MHz	1000 MHz
HMC960LP4E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY		1				COMPONENT	5	LCC24,.16SQ,20			85 Cel	0 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	0 MHz	100 MHz
HMC634LC4	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	10 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel	GOLD OVER NICKEL		e4	5000 MHz	20000 MHz
MHT2012NT1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY		1	20 dBm	10		COMPONENT	28	LCC24,.3SQ,32	50 ohm		150 Cel	29.7 dB	-40 Cel	TIN		e3	2400 MHz	2500 MHz
XP1035-QH-0G0T	M/a-com Technology Solutions	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS		15 dBm			COMPONENT	6	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel	26 dB	-55 Cel	MATTE TIN		e3	5900 MHz	9500 MHz
HMC634LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	10 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel				5000 MHz	20000 MHz
HMC634LC4TR-R5	Analog Devices		SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1					5	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
RF6886TR7	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR	1	12 dBm	5		COMPONENT	3.6	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	31 dB	-40 Cel		IT CAN ALSO OPERATE AT 100 TO 1000 MHZ		433 MHz	470 MHz
RF6886TR13	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR	1	12 dBm	5		COMPONENT	3.6	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	31 dB	-40 Cel		IT CAN ALSO OPERATE AT 100 TO 1000 MHZ		433 MHz	470 MHz
AFIC901NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY		1		25		COMPONENT	7.5	LCC24,.16SQ,20	50 ohm		150 Cel	31.2 dB	-40 Cel	TIN		e3	1.8 MHz	1000 MHz
HMC635LC4	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	15 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	70 Cel	15 dB	-55 Cel	GOLD OVER NICKEL		e4	18000 MHz	40000 MHz
HMC498LC4	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	10 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel	GOLD OVER NICKEL	POWER AMPLIFIER WITH LNA	e4	17000 MHz	24000 MHz
RF6886SR	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR	1	12 dBm	5		COMPONENT	3.6	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	31 dB	-40 Cel		IT CAN ALSO OPERATE AT 100 TO 1000 MHZ		433 MHz	470 MHz
HMC505LP4ETR	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR	1					3	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	MATTE TIN		e3
HMC517LC4	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	2 dBm			COMPONENT	3	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	15 dB	-40 Cel	GOLD OVER NICKEL		e4	17000 MHz	26000 MHz
XP1035-QH-0G00	M/a-com Technology Solutions	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS		15 dBm			COMPONENT	6	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel	26 dB	-55 Cel	Matte Tin (Sn)		e3	5900 MHz	9500 MHz
HMC392ALC4	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24		GAAS	1	20 dBm		75 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm		85 Cel	14.5 dB	-40 Cel	GOLD NICKEL	HIGH RELIABILITY	e4	3500 MHz	8000 MHz
HMC963LC4TR-R5	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	PHEMT	1	0 dBm	1.92	65 mA	COMPONENT	3.5	LCC24,.16SQ,20	50 ohm		85 Cel	16.5 dB	-40 Cel	Gold (Au) - with Nickel (Ni) barrier		e4	6000 MHz	26500 MHz
HMC499LC4	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	20 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel	GOLD OVER NICKEL		e4	21000 MHz	32000 MHz
HMC499LC4TR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1					5	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC564LC4	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	20 dBm		75 mA	COMPONENT	3	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-40 Cel	GOLD OVER NICKEL		e4	7000 MHz	14000 MHz
HMC816LP4ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	2			126 mA		5	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC752LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1					3	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	TUNGSTEN NICKEL GOLD
HMC505LP4	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR	1		2		COMPONENT	3	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN LEAD	LOW NOISE	e0	6800 MHz	7400 MHz
QPA2611TR7	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAN	1	21 dBm	3		COMPONENT		LCC24,.2SQ,25	50 ohm			35.5 dB					8000 MHz	12000 MHz
HMC409LP4E	Analog Devices	NARROW BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	10 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	28 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	3300 MHz	3800 MHz
HMC505LP4TR	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR	1					3	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC751LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	-5 dBm		90 mA	COMPONENT	4	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	22 dB	-40 Cel	GOLD OVER NICKEL		e4	17000 MHz	27000 MHz
QPA2612	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAN	1	21 dBm	4		COMPONENT		LCC24,.2SQ,25	50 ohm			34.2 dB					8000 MHz	12000 MHz
QPA2612TR7	Qorvo	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAN	1	21 dBm	4		COMPONENT		LCC24,.2SQ,25	50 ohm			34.2 dB					8000 MHz	12000 MHz
HMC498LC4TR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	10 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel		LOW NOISE		17000 MHz	24000 MHz
HMC694LP4ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1					5	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	MATTE TIN		e3
HMC342LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1					3	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC383LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1			135 mA		5	LCC24,.16SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC409LP4ETR	Analog Devices	NARROW BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	BIPOLAR	1	10 dBm			COMPONENT	5	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	28 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	3300 MHz	3800 MHz
HMC609LC4TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	CERAMIC	GAAS	1	15 dBm		220 mA	COMPONENT	6	LCC24,.16SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel	GOLD NICKEL		e4	2000 MHz	4000 MHz
HMC7357LP5GE	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	22 dBm			COMPONENT	8	LCC24,.2SQ,25	50 ohm		85 Cel	29.5 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	5500 MHz	8500 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.