Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Qorvo |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
GAN |
1 |
29 dBm |
3 |
COMPONENT |
LCC28,.24SQ,25 |
50 ohm |
85 Cel |
31 dB |
-40 Cel |
2800 MHz |
3500 MHz |
||||||||||
|
Triquint Semiconductor |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
1 |
16 dBm |
390 mA |
COMPONENT |
11 |
LCC28,.24SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
30 MHz |
2200 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
28 |
PHEMT |
1 |
250 mA |
COMPONENT |
4 |
50 ohm |
85 Cel |
19 dB |
-55 Cel |
71000 MHz |
76000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
GAAS |
1 |
17.5 dBm |
.25 mA |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
85 Cel |
9 dB |
-40 Cel |
Matte Tin (Sn) |
CMOS COMPATIBLE |
e3 |
500 MHz |
4000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
28 |
PHEMT |
1 |
250 mA |
COMPONENT |
4 |
50 ohm |
85 Cel |
19 dB |
-55 Cel |
71000 MHz |
76000 MHz |
||||||||||||
|
Maxim Integrated |
WIDE BAND LOW POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
BIPOLAR |
4 |
396 mA |
COMPONENT |
5 |
LCC28,.2SQ,20 |
75 ohm |
RF/Microwave Amplifiers |
70 Cel |
4 dB |
0 Cel |
Matte Tin (Sn) |
e3 |
50 MHz |
878 MHz |
|||||||
|
Maxim Integrated |
WIDE BAND LOW POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
BIPOLAR |
4 |
396 mA |
COMPONENT |
5 |
LCC28,.2SQ,20 |
75 ohm |
RF/Microwave Amplifiers |
70 Cel |
4 dB |
0 Cel |
MATTE TIN |
e3 |
50 MHz |
878 MHz |
|||||||
Maxim Integrated |
WIDE BAND LOW POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
BIPOLAR |
4 |
396 mA |
COMPONENT |
5 |
LCC28,.2SQ,20 |
75 ohm |
RF/Microwave Amplifiers |
70 Cel |
4 dB |
0 Cel |
Tin/Lead (Sn85Pb15) |
e0 |
50 MHz |
878 MHz |
||||||||
|
Maxim Integrated |
WIDE BAND LOW POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
BIPOLAR |
4 |
396 mA |
COMPONENT |
5 |
LCC28,.2SQ,20 |
75 ohm |
RF/Microwave Amplifiers |
70 Cel |
4 dB |
0 Cel |
Matte Tin (Sn) |
e3 |
50 MHz |
878 MHz |
|||||||
Maxim Integrated |
WIDE BAND LOW POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
BIPOLAR |
4 |
396 mA |
COMPONENT |
5 |
LCC28,.2SQ,20 |
75 ohm |
RF/Microwave Amplifiers |
70 Cel |
4 dB |
0 Cel |
Tin/Lead (Sn/Pb) |
e0 |
50 MHz |
878 MHz |
||||||||
|
Maxim Integrated |
WIDE BAND LOW POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
BIPOLAR |
4 |
396 mA |
COMPONENT |
5 |
LCC28,.2SQ,20 |
75 ohm |
RF/Microwave Amplifiers |
70 Cel |
4 dB |
0 Cel |
Matte Tin (Sn) |
e3 |
50 MHz |
878 MHz |
|||||||
Maxim Integrated |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
BIPOLAR |
3 dBm |
8 |
70 mA |
3.3/5 |
SSOP28,.25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
31 dB |
-20 Cel |
Tin/Lead (Sn/Pb) |
e0 |
800 MHz |
1000 MHz |
||||||||
|
Broadcom |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
GAAS |
3 |
600 mA |
5 |
LCC28,.2SQ,20 |
RF/Microwave Amplifiers |
||||||||||||||||
|
Broadcom |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
GAAS |
1 |
560 mA |
5 |
LCC28,.2SQ,20 |
RF/Microwave Amplifiers |
||||||||||||||||
|
Broadcom |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
6 |
COMPONENT |
5 |
LCC28,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
31.5 dB |
Tin (Sn) |
CMOS COMPATIBLE |
e3 |
700 MHz |
800 MHz |
|||||||
|
Broadcom |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
5 |
LCC28,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
35 dB |
Tin (Sn) |
e3 |
2500 MHz |
2700 MHz |
|||||||||
|
Broadcom |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
GAAS |
3 |
20 dBm |
600 mA |
COMPONENT |
5 |
LCC28,.2SQ,20 |
RF/Microwave Amplifiers |
38 dB |
1930 MHz |
1995 MHz |
|||||||||||
|
Broadcom |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
GAAS |
1 |
560 mA |
5 |
LCC28,.2SQ,20 |
RF/Microwave Amplifiers |
||||||||||||||||
|
Broadcom |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
GAAS |
3 |
600 mA |
5 |
LCC28,.2SQ,20 |
RF/Microwave Amplifiers |
||||||||||||||||
|
Broadcom |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
5 |
LCC28,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
35 dB |
Tin (Sn) |
e3 |
2500 MHz |
2700 MHz |
|||||||||
|
Broadcom |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
6 |
COMPONENT |
5 |
LCC28,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
31.5 dB |
Tin (Sn) |
CMOS COMPATIBLE |
e3 |
700 MHz |
800 MHz |
|||||||
|
Broadcom |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
GAAS |
1 |
600 mA |
5 |
LCC28,.2SQ,20 |
RF/Microwave Amplifiers |
||||||||||||||||
|
Broadcom |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
GAAS |
3 |
20 dBm |
600 mA |
COMPONENT |
5 |
LCC28,.2SQ,20 |
RF/Microwave Amplifiers |
38 dB |
1930 MHz |
1995 MHz |
|||||||||||
|
Broadcom |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
GAAS |
1 |
600 mA |
5 |
LCC28,.2SQ,20 |
RF/Microwave Amplifiers |
||||||||||||||||
|
Broadcom |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
5 |
LCC28,.2SQ,20 |
RF/Microwave Amplifiers |
35 dB |
Tin (Sn) |
e3 |
2300 MHz |
2500 MHz |
||||||||||
|
Broadcom |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
28 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
5 |
LCC28,.2SQ,20 |
RF/Microwave Amplifiers |
35 dB |
Tin (Sn) |
e3 |
2300 MHz |
2500 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.