Broadcom - MGA-43628-BLKG

SGA-3363-TR1 by Rf Micro Devices is a wide band low power RF amplifier with 15.5 dB gain, operating from 0 to 3600 MHz. It has a max input power of 5 dBm and VSWR of 1.2, suitable for RF & microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

ADL8107ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 18dB gain, operating from 6-18GHz. It has a max input power of 22dBm and VSWR of 1.54, suitable for wideband low-power applications in RF & microwave systems. With surface mount construction and 8 terminals, it operates b/w -40 to 85°C with a +5V supply.

WIDE BAND LOW POWER;

Mini-circuits LEE-39 is a wide band low power RF amplifier with 18.5 dB gain, handling up to 13 dBm CW input power. Featuring a VSWR of 1.6, it operates from -40°C to 85°C, making it ideal for various RF and microwave applications up to 8 GHz.

Analog Devices' HMC478SC70ETR is a wide band low power RF amplifier with 5V supply, 82mA max current, and -40 to 85°C operating range. Its bipolar technology and surface mount package make it ideal for RF & microwave applications requiring high performance in compact designs.

HMC451LP3E by Analog Devices is a GAAS RF amplifier with 12.5 dB gain, operating from 5V supply at frequencies ranging from 5-18000 MHz. With a max input power of 10 dBm, it is ideal for wide band low power applications in RF and microwave systems requiring surface mount components.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 115 mA;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 12 dB;

The Mini-circuits ERA-3SM is a wide band low power RF amplifier with 16 dB gain, operating from 0 to 3000 MHz. It has a max input power of 13 dBm and VSWR of 1.5, suitable for applications requiring high frequency amplification in RF & microwave systems. The component is designed for surface mount installation and operates within a temperature range of -45 to 85°C.

NARROW BAND LOW POWER;

WIDE BAND HIGH POWER;

HELA-10B+ by Mini-circuits is a wideband medium power RF amplifier with 9.5 dB gain, suitable for frequencies ranging from 50 MHz to 1000 MHz. It can handle a max input power of 20 dBm and has a VSWR of 1.22, making it ideal for various RF and microwave applications.

ADL8111ACCZN by Analog Devices is a wide band low power RF amplifier with 10.6 dB gain, operating from 10 MHz to 8000 MHz. It can handle up to 20 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

HELA-10D by Mini-circuits is a wideband medium power RF amplifier with 9.3 dB gain, handling up to 20 dBm CW input power. It operates b/w 8-300 MHz frequencies with VSWR of 1.2, suitable for various RF and microwave applications requiring a 50 ohm impedance.

Analog Devices' HMC636ST89TR is a GaAs RF amplifier with 5V power supply, operating from -40 to 85°C. It features wideband low power design in a surface-mount package, ideal for RF and microwave applications requiring high performance in compact setups.

Mini-circuits LEE-29+ is a wideband low power RF amplifier with 13.3 dB gain, operating from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 1.6, suitable for various RF & microwave applications requiring amplification in the temperature range of -40 to 85°C.

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

WIDE BAND HIGH POWER; Gain: 15.5 dB; JESD-609 Code: e3; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 25 dBm; Terminal Finish: Matte Tin (Sn);

Qorvo's NBB-310-T1 is a ceramic RF amplifier with 20 dBm CW input power, 9 dB gain, and 50 ohm impedance. Ideal for wide band low power applications from 0 to 12000 MHz, it operates b/w -45°C to 85°C. Suitable for surface mount installations with a voltage supply of 5V.

Analog Devices' HMC311ST89TR is a wide band low power RF amplifier with 5V supply, operating from -40 to 85°C. It features bipolar technology, surface mount package, and draws max 74mA current. Ideal for RF & microwave applications requiring compact amplification solutions.