Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
54 mA |
COMPONENT |
5 |
SOT-143R |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11.4 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
50 MHz |
4000 MHz |
||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
27 dBm |
99 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11.2 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
50 MHz |
4000 MHz |
||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
23 dBm |
150 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
LOW NOISE |
e4 |
50 MHz |
4000 MHz |
|||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
24 dBm |
92 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14.5 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
50 MHz |
6000 MHz |
||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
24 dBm |
92 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14.5 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
50 MHz |
6000 MHz |
||||||
|
Sirenza Microdevices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
12 dBm |
92 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14.5 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
50 MHz |
6000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
110 mA |
COMPONENT |
3.5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
18.5 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
LOW NOISE |
e3 |
6000 MHz |
17000 MHz |
||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
27 dBm |
99 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11.2 dB |
-40 Cel |
MATTE TIN |
e3 |
50 MHz |
4000 MHz |
||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
54 mA |
COMPONENT |
5 |
SOT-143R |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11.4 dB |
-40 Cel |
50 MHz |
4000 MHz |
||||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
54 mA |
COMPONENT |
5 |
SOT-143R |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11.4 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
50 MHz |
4000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
110 mA |
COMPONENT |
3.5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
17.5 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
LOW NOISE |
e3 |
6000 MHz |
17000 MHz |
||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
21 dBm |
2 |
77 mA |
COMPONENT |
3/5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
20.4 dB |
Tin (Sn) |
e3 |
100 MHz |
3000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
150 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.5 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
5000 MHz |
18000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
115 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
6500 MHz |
13500 MHz |
||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
20 |
130 mA |
COMPONENT |
8 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20.5 dB |
-40 Cel |
LOW NOISE |
5 MHz |
1500 MHz |
||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
350 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TUNGSTEN NICKEL GOLD |
|||||||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
21 dBm |
2 |
77 mA |
COMPONENT |
3/5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
20.4 dB |
Matte Tin (Sn) |
e3 |
100 MHz |
3000 MHz |
|||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
115 mA |
COMPONENT |
5 |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
GOLD |
e4 |
6000 MHz |
18000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
115 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
6500 MHz |
13500 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
0 dBm |
65 mA |
COMPONENT |
3.5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16.5 dB |
-40 Cel |
TUNGSTEN NICKEL GOLD |
6000 MHz |
26500 MHz |
|||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
21 dBm |
2 |
77 mA |
COMPONENT |
3/5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
20.4 dB |
Matte Tin (Sn) |
e3 |
100 MHz |
3000 MHz |
|||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
|||||||||||||
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
21 dBm |
2 |
77 mA |
COMPONENT |
3/5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
13 dB |
Tin/Lead (Sn/Pb) |
e0 |
100 MHz |
3000 MHz |
||||||||
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
21 dBm |
2 |
77 mA |
COMPONENT |
3/5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
13 dB |
Tin/Lead (Sn/Pb) |
e0 |
100 MHz |
3000 MHz |
||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
115 mA |
COMPONENT |
5 |
LCC12,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
GOLD |
e4 |
6000 MHz |
18000 MHz |
||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
MATTE TIN |
e3 |
5500 MHz |
18000 MHz |
|||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
1.2 |
101 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8.8 dB |
-40 Cel |
Matte Tin (Sn) |
LOW NOISE |
e3 |
100 MHz |
6000 MHz |
||||
|
M/a-com Technology Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
24 dBm |
75 mA |
COMPONENT |
3/5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
95 Cel |
10 dB |
-40 Cel |
MATTE TIN |
e3 |
100 MHz |
3500 MHz |
||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
18 dBm |
2 |
48 mA |
COMPONENT |
3/5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
6.9 dB |
Matte Tin (Sn) |
e3 |
100 MHz |
6000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
20 dBm |
75 mA |
COMPONENT |
3 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
GOLD NICKEL |
e4 |
7000 MHz |
14000 MHz |
||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
24 dBm |
COMPONENT |
6 |
LCC24,.2SQ,25 |
50 ohm |
85 Cel |
28 dB |
-55 Cel |
Matte Tin (Sn) - annealed |
e3 |
8000 MHz |
14000 MHz |
||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
115 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
TIN LEAD |
e0 |
6500 MHz |
13500 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
150 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.5 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
5000 MHz |
18000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
70 Cel |
-55 Cel |
|||||||||||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
20 |
130 mA |
COMPONENT |
8 |
LCC16,.12SQ,20 |
75 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
MATTE TIN |
e3 |
5 MHz |
1500 MHz |
|||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
74 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
0 MHz |
8000 MHz |
||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
CERAMIC |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
5000 MHz |
20000 MHz |
|||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
2 |
51 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
Matte Tin (Sn) |
LOW NOISE, HIGH RELIABILITY |
e3 |
100 MHz |
6000 MHz |
||||
|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
23 dBm |
104 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
18.4 dB |
MATTE TIN |
e3 |
450 MHz |
3800 MHz |
|||||||||
|
Qorvo |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
10 |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
32 dB |
-40 Cel |
Matte Tin (Sn) |
IT CAN ALSO OPERATE AT 800 TO 950 MHZ |
e3 |
880 MHz |
915 MHz |
|||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
5 dBm |
85 mA |
COMPONENT |
2.5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
24000 MHz |
43500 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
65 mA |
COMPONENT |
3/5 |
SOLCC8,.11,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
400 MHz |
4000 MHz |
|||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
0 dBm |
COMPONENT |
5 |
TSOP8,.3,38 |
75 ohm |
RF/Microwave Amplifiers |
85 Cel |
2 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
40 MHz |
960 MHz |
||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
5 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
3000 MHz |
4500 MHz |
|||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
18 dBm |
2 |
48 mA |
COMPONENT |
3/5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
6.9 dB |
Matte Tin (Sn) |
e3 |
100 MHz |
6000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
84 mA |
5 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
||||||||||||
|
Sirenza Microdevices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
12 dBm |
92 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
50 MHz |
6000 MHz |
||||||
|
Qorvo |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
24 dBm |
92 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.5 dB |
-40 Cel |
NICKEL PALLADIUM GOLD |
e4 |
50 MHz |
6000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.