GAAS RF & Microwave Amplifiers 1,087

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MGA-31816-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	24 dBm		83 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-45 Cel	Tin (Sn)	LOW NOISE	e3	1500 MHz	4000 MHz
ALM-31322-TR1G	Broadcom	NARROW BAND MEDIUM POWER		22	PLASTIC/EPOXY	GAAS	1	25 dBm		480 mA	COMPONENT	5	MODULE,22LEAD,0.25	50 ohm	RF/Microwave Amplifiers		11.7 dB					3300 MHz	3900 MHz
ALM-32320-TR2G	Broadcom	NARROW BAND MEDIUM POWER			PLASTIC/EPOXY	GAAS	1	28 dBm		910 mA	COMPONENT	5	MODULE(UNSPEC)	50 ohm	RF/Microwave Amplifiers		11.2 dB					3300 MHz	3900 MHz
ALM-32220-TR2G	Broadcom	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1	28 dBm		930 mA	MODULE	5	MODULE(UNSPEC)	50 ohm	RF/Microwave Amplifiers		13.5 dB					1700 MHz	2700 MHz
MGA-725M4-TR2	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	GAAS	1	13 dBm	2	60 mA	COMPONENT	3	SOLCC4,.05,37	50 ohm	RF/Microwave Amplifiers		10.6 dB		Gold (Au)		e4	100 MHz	6000 MHz
MGA-30216-BLKG	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	22 dBm		255 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers		13 dB		Matte Tin (Sn)		e3	1700 MHz	2700 MHz
MGA-310G-BLK	Broadcom	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm		13 mA	COMPONENT	2.7	LCC6,.04SQ,20		RF/Microwave Amplifiers		6.5 dB			IT CAN ALSO OPERATE AT 880-915 MHZ, 1710-1785 MHZ, 1850-1910 MHZ, 1920-1980 MHZ AND 5200-5800 MHZ		824 MHz	849 MHz
MGA-86563-TR2	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	13 dBm	1.7		COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	13.7 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	500 MHz	6000 MHz
MGA-30216-TR1G	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	22 dBm		255 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm	RF/Microwave Amplifiers		13 dB		Matte Tin (Sn)		e3	1700 MHz	2700 MHz
MGA-310G-TR1	Broadcom	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS	1	10 dBm		13 mA	COMPONENT	2.7	LCC6,.04SQ,20		RF/Microwave Amplifiers		6.5 dB			IT CAN ALSO OPERATE AT 880-915 MHZ, 1710-1785 MHZ, 1850-1910 MHZ, 1920-1980 MHZ AND 5200-5800 MHZ		824 MHz	849 MHz
AMMP-5024-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1	17 dBm			COMPONENT	7	LCC8,.2SQ,28	50 ohm	RF/Microwave Amplifiers		12.5 dB		Nickel/Gold (Ni/Au)		e4	.03 MHz	40000 MHz
MGA-31716-BLKG	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	24 dBm		83 mA	COMPONENT	5	LCC16,.1SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	18.5 dB	-45 Cel	Tin (Sn)	LOW NOISE	e3	0 MHz	2000 MHz
MGA-86576-TR2	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	GAAS		13 dBm	2.5	22 mA	COMPONENT	5	SL,4LEAD,.07SQ	50 ohm	RF/Microwave Amplifiers		20 dB		Gold (Au)		e4	1500 MHz	8000 MHz
MGA-71543-TR2G	Broadcom	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS	1	10 dBm		50 mA	COMPONENT	3	SOT-343R	50 ohm	RF/Microwave Amplifiers		14.4 dB		Matte Tin (Sn)		e3	100 MHz	6000 MHz
MGA-25203-TR1	Broadcom		SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1					3.3	LCC16,.12SQ,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
MGA-31589-TR1G	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	17 dBm		175 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		19.3 dB		Tin (Sn)	LOW NOISE	e3	450 MHz	1500 MHz
MGA-71543-TR2	Broadcom	WIDE BAND LOW POWER			PLASTIC/EPOXY	GAAS	1	10 dBm		50 mA	COMPONENT	3	SOT-343R	50 ohm	RF/Microwave Amplifiers		14.4 dB		Tin/Lead (Sn/Pb)		e0	100 MHz	6000 MHz
HMM11130-200	Samsung					GAAS				900 mA		7,-5	DIE OR CHIP		RF/Microwave Amplifiers	180 Cel		25 Cel
HMR10504	Samsung					GAAS				300 mA		12	DIE OR CHIP		RF/Microwave Amplifiers
SMP-22203	Samsung		SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS						+-5	SOP8,.25		RF/Microwave Amplifiers	85 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0
HMM10510	Samsung					GAAS				440 mA		9	DIE OR CHIP		RF/Microwave Amplifiers	180 Cel
HMM10410	Samsung					GAAS				440 mA		9	DIE OR CHIP		RF/Microwave Amplifiers
HMM11820	Samsung					GAAS				80 mA		8.5	DIE OR CHIP		RF/Microwave Amplifiers	25 Cel		25 Cel
HMM10610	Samsung					GAAS						5	DIE OR CHIP		RF/Microwave Amplifiers	25 Cel		25 Cel
HMM10620	Samsung					GAAS				100 mA		8.5	DIE OR CHIP		RF/Microwave Amplifiers
SMP-13203	Samsung		SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS						5	SOP8,.25		RF/Microwave Amplifiers	85 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0
HMM11520	Samsung					GAAS				80 mA		8.5	DIE OR CHIP		RF/Microwave Amplifiers	25 Cel		25 Cel
HMM11810	Samsung					GAAS				275 mA		5	DIE OR CHIP		RF/Microwave Amplifiers	25 Cel		25 Cel
HMR10505	Samsung					GAAS	1			300 mA		12	DIE OR CHIP		RF/Microwave Amplifiers
HMM11130-100	Samsung					GAAS				900 mA		7,-5	DIE OR CHIP		RF/Microwave Amplifiers	180 Cel		25 Cel
SMP-11206	Samsung		SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS						5	SOP8,.25		RF/Microwave Amplifiers	85 Cel		-55 Cel	Tin/Lead (Sn/Pb)		e0

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.