Broadcom - ALM-32320-TR2G

  1. Home
  2. Broadcom - ALM-32320-TR2G
ALM-32320-TR2G by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number ALM-32320-TR2G
Description NARROW BAND MEDIUM POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5; Maximum Input Power (CW): 28 dBm; Characteristic Impedance: 50 ohm;
Datasheet ALM-32320-TR2G Datasheet
In Stock115
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 3300 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 910 mA
No. of Functions: 1
Maximum Input Power (CW): 28 dBm
Package Equivalence Code: MODULE(UNSPEC)
Technology: GAAS
Characteristic Impedance: 50 ohm
Maximum Operating Frequency: 3900 MHz
RF or Microwave Device Type: NARROW BAND MEDIUM POWER
Gain: 11.2 dB
Power Supplies (V): 5
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
115 - -

Popular Products

Category Top Products

TGA4521 by Qorvo

TGA4521

Qorvo

Qorvo's TGA4521 is a GaAs RF amplifier with 16dB gain, operating from 32-45 GHz. It handles up to 20 dBm CW input power and requires a 6V supply. Ideal for wideband medium-power applications in RF and microwave systems.
HMC441LC3BTR by Hittite Microwave

HMC441LC3BTR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: LCC12,.12SQ,20;
AFD4-020040-20P by L-3 Narda-miteq

AFD4-020040-20P

L-3 Narda-miteq

AFD4-020040-20P by L-3 Narda-miteq is a COAXIAL RF amplifier with 32 dB gain, VSWR of 2, operating from 2-4 GHz. Ideal for wideband medium power applications in RF & microwave systems.
RA18H1213G-101 by Mitsubishi Electric

RA18H1213G-101

Mitsubishi Electric

The Mitsubishi Electric RA18H1213G-101 is a RF amplifier module with 23 dB gain, operating b/w 1240-1300 MHz. It has a max input power of 24.77 dBm and VSWR of 3, suitable for narrowband high-power applications. With hybrid technology and operating temperatures from -30 to 110°C, it's ideal for various RF and microwave systems.
TQP7M9102-PCB2140 by Qorvo

TQP7M9102-PCB2140

Qorvo

WIDE BAND MEDIUM POWER; JESD-609 Code: e4; Terminal Finish: NICKEL PALLADIUM GOLD;
MAX2691EWS+T by Maxim Integrated

MAX2691EWS+T

Maxim Integrated

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; No. of Functions: 1;
MGA-565P8-BLK by Broadcom

MGA-565P8-BLK

Broadcom

Broadcom's MGA-565P8-BLK is a wide band low power RF amplifier with 20 dB gain, handling up to 15 dBm CW input power. It operates from 0-3500 MHz, featuring a VSWR of 2. Ideal for RF & microwave applications due to its high performance and matte tin finish.
MGA-545P8-TR1G by Agilent Technologies

MGA-545P8-TR1G

Agilent Technologies

Agilent Technologies' MGA-545P8-TR1G is a wide band medium power RF amplifier with 10.5 dB gain, operating from 50 MHz to 7000 MHz. It can handle up to 20 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for RF & microwave applications requiring high frequency amplification in component construction.
NJG1150UA2-TE1 by New Japan Radio

NJG1150UA2-TE1

New Japan Radio

NARROW BAND LOW POWER;
MAAM-011112-TR0500 by M/a-com Technology Solutions

MAAM-011112-TR0500

M/a-com Technology Solutions

MAAM-011112-TR0500 by M/a-com Technology Solutions is a wide band low power RF amplifier with 21 dB gain. It operates b/w 20-37 GHz, suitable for various RF & microwave applications. With a max input power of 0 dBm and operating temperature range from -40 to 85°C, it offers reliable performance in diverse environments.
RA07H4047M-501 by Mitsubishi Electric

RA07H4047M-501

Mitsubishi Electric

Mitsubishi Electric's RA07H4047M-501 is a 50 ohm hybrid module with narrow band high power RF/Microwave device type. It offers 25.22 dB gain, operates b/w 400-470 MHz frequencies, and handles up to 14.77 dBm input power. Ideal for applications requiring high-power amplification in the RF & Microwave domain.
BGU8019X by NXP Semiconductors

BGU8019X

NXP Semiconductors

The NXP Semiconductors BGU8019X is a RF & Microwave Amplifier with 16 dB Gain, operating from 1559 MHz to 1610 MHz. It has a Max Input Power of 10 dBm and operates in temperatures ranging from -40°C to 85°C. Ideal for narrow band low power applications with a characteristic impedance of 50 ohm.
HMC963LC4TR by Analog Devices

HMC963LC4TR

Analog Devices

Analog Devices' HMC963LC4TR is a wide band low power RF amplifier with 16.5 dB gain, operating from 6-26.5 GHz. It features a max input power of 0 dBm, 3.5V supply voltage, and ceramic package ideal for surface mount applications in RF & microwave systems.
GRF2013 by Guerrilla Rf

GRF2013

Guerrilla Rf

GRF2013 by Guerrilla Rf is a wide band medium power RF amplifier with 17.5 dB gain, operating from 50-8000 MHz. It can handle up to 22 dBm CW input power and has a max VSWR of 2. Ideal for applications requiring high-frequency amplification in temperatures ranging from -40 to 105°C.
HMC463LP5E by Hittite Microwave

HMC463LP5E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 20000 MHz;
MD7IC2012GNR1,528 by NXP Semiconductors

MD7IC2012GNR1,528

NXP Semiconductors

NARROW BAND HIGH POWER;
HMC465LP5E by Hittite Microwave

HMC465LP5E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;
BGM1013 by NXP Semiconductors

BGM1013

NXP Semiconductors

The NXP Semiconductors BGM1013 is a wide band low power RF amplifier with 24 dB gain. It operates from 100 MHz to 3000 MHz, with -10 dBm CW input power and 5V supply voltage. Ideal for applications requiring surface mount components in RF & microwave systems.
HMC505LP4E by Analog Devices

HMC505LP4E

Analog Devices

Analog Devices' HMC505LP4E is a RF amplifier with 50 ohm impedance, operating frequency range of 6800-7400 MHz, and VSWR of 2. Ideal for narrowband low-power applications in temperatures from -40 to 85°C. Package: PLASTIC/EPOXY, Technology: BIPOLAR, Mounting: SURFACE MOUNT.
BGA622H6820XTSA1 by Infineon Technologies

BGA622H6820XTSA1

Infineon Technologies

Infineon's BGA622H6820XTSA1 is a wide band low power RF amplifier with 13.6 dB gain, operating from 500 MHz to 6000 MHz. It can handle up to 6 dBm input power and operates b/w -65°C to 150°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact component design.