Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
400 mA |
10 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-55 Cel |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
-5 dBm |
90 mA |
COMPONENT |
4 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
22 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
17000 MHz |
27000 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
128 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
19 dB |
Tin (Sn) |
LOW NOISE |
e3 |
50 MHz |
2000 MHz |
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Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
16 dBm |
COMPONENT |
5 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
3000 MHz |
4000 MHz |
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|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
30 dBm |
COMPONENT |
3 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13 dB |
-40 Cel |
MATTE TIN |
e3 |
3400 MHz |
3800 MHz |
|||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-40 Cel |
LOW NOISE |
17000 MHz |
24000 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
MATTE TIN |
e3 |
|||||||||||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
2 |
130 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
105 Cel |
24 dB |
-40 Cel |
2300 MHz |
5000 MHz |
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|
Analog Devices |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
16 |
CERAMIC |
GAAS |
1 |
6 |
LCC16,.24SQ,40/32 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TUNGSTEN NICKEL GOLD |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
128 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
19 dB |
Tin (Sn) |
LOW NOISE |
e3 |
50 MHz |
2000 MHz |
|||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
PLASTIC/EPOXY |
GAAS |
1 |
28 dBm |
910 mA |
COMPONENT |
5 |
MODULE(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
12.5 dB |
700 MHz |
1000 MHz |
||||||||||||
Analog Devices |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
1.4 |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
85 Cel |
9 dB |
-40 Cel |
1700 MHz |
2500 MHz |
||||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
TIN LEAD |
LOW NOISE |
e0 |
12000 MHz |
16000 MHz |
|||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
12000 MHz |
16000 MHz |
||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
12000 MHz |
16000 MHz |
|||||||||
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
5 dBm |
88 mA |
COMPONENT |
3 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-55 Cel |
GOLD |
e4 |
7000 MHz |
17000 MHz |
|||||||||
|
TE Connectivity |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
11 mA |
3/5 |
SOP8,.25 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
131 mA |
COMPONENT |
5 |
LCC16,.16SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
36.5 dB |
Tin (Sn) |
e3 |
400 MHz |
1500 MHz |
||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
125 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
13.7 dB |
Tin (Sn) |
LOW NOISE |
e3 |
40 MHz |
3000 MHz |
|||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
4 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
16 dB |
Matte Tin (Sn) |
e3 |
1400 MHz |
3800 MHz |
|||||||||
|
Qorvo |
WIDE BAND LOW POWER |
GAAS |
1 |
22 dBm |
COMPONENT |
5 |
DIE OR CHIP |
RF/Microwave Amplifiers |
17.5 dB |
2000 MHz |
20000 MHz |
|||||||||||||||
|
Broadcom |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
GAAS |
1 |
28 dBm |
930 mA |
MODULE |
5 |
MODULE(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
13.5 dB |
1700 MHz |
2700 MHz |
||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
5 |
GAAS |
1 |
10 dBm |
65 mA |
COMPONENT |
8 |
DIE OR CHIP |
50 ohm |
85 Cel |
10 dB |
-55 Cel |
500 MHz |
80000 MHz |
||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
18 dBm |
COMPONENT |
5 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10 dB |
-40 Cel |
TIN LEAD |
e0 |
2000 MHz |
20000 MHz |
||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
16 dBm |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
5 dB |
-40 Cel |
MATTE TIN |
LOW NOISE |
e3 |
200 MHz |
4000 MHz |
||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
140 mA |
COMPONENT |
5 |
LCC16,.16SQ,25 |
RF/Microwave Amplifiers |
30.2 dB |
Matte Tin (Sn) |
e3 |
400 MHz |
1500 MHz |
|||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
140 mA |
COMPONENT |
5 |
LCC16,.16SQ,25 |
RF/Microwave Amplifiers |
30.2 dB |
Matte Tin (Sn) |
e3 |
400 MHz |
1500 MHz |
|||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
140 mA |
COMPONENT |
5 |
LCC16,.16SQ,25 |
RF/Microwave Amplifiers |
30.2 dB |
Matte Tin (Sn) |
e3 |
400 MHz |
1500 MHz |
|||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
195 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
16.6 dB |
Tin (Sn) |
LOW NOISE |
e3 |
1500 MHz |
3000 MHz |
|||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
195 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
16.6 dB |
Tin (Sn) |
LOW NOISE |
e3 |
1500 MHz |
3000 MHz |
|||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
1.3 |
20 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14.5 dB |
-40 Cel |
Matte Tin (Sn) |
LOW NOISE |
e3 |
800 MHz |
6000 MHz |
||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
CERAMIC |
GAAS |
1 |
13 dBm |
2.5 |
22 mA |
COMPONENT |
5 |
SL,4LEAD,.07SQ |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
Matte Tin (Sn) |
e3 |
1500 MHz |
8000 MHz |
|||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
4 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
2.5 |
22 mA |
COMPONENT |
5 |
SL,4LEAD,.07SQ |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
1500 MHz |
8000 MHz |
||||||||||
|
Rf Micro Devices |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
3.6 |
LCC16,.16SQ,32 |
RF/Microwave Amplifiers |
|||||||||||||||||
|
Qorvo |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
TO-243 |
RF/Microwave Amplifiers |
||||||||||||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
18 |
CERAMIC, METAL-SEALED COFIRED |
GAAS |
1 |
27 dBm |
1.29 |
COMPONENT |
5 |
50 ohm |
85 Cel |
18.5 dB |
-40 Cel |
20000 MHz |
44000 MHz |
||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
e0 |
0 MHz |
6000 MHz |
||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
74 mA |
5 |
LCC16,.12SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
3 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
|||||||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
135 mA |
5 |
LCC24,.16SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||
|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
3.3 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
32 dB |
-40 Cel |
3300 MHz |
3800 MHz |
|||||||||
|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
77 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
14.6 dB |
Matte Tin (Sn) |
e3 |
40 MHz |
2600 MHz |
||||||||
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
2 |
51 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.5 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE, HIGH RELIABILITY |
e0 |
100 MHz |
6000 MHz |
|||||
|
Qorvo |
WIDE BAND MEDIUM POWER |
GAAS |
1 |
20 dBm |
COMPONENT |
6 |
DIE OR CHIP |
RF/Microwave Amplifiers |
16 dB |
32000 MHz |
45000 MHz |
|||||||||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
8 |
LCC32,.2SQ,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
Analog Devices |
NARROW BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
1.38 |
90 mA |
COMPONENT |
3/5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15.5 dB |
-40 Cel |
MATTE TIN |
e3 |
3100 MHz |
3900 MHz |
|||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
5 |
SOLCC6,.08,25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
9 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
0 MHz |
10000 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.