Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
5 |
SOLCC6,.08,25 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
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|
TE Connectivity |
SURFACE MOUNT |
8 |
CERAMIC |
GAAS |
100 mA |
10 |
SOP8(UNSPEC) |
RF/Microwave Amplifiers |
100 Cel |
-55 Cel |
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|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
4.5 |
200 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
17 dB |
Matte Tin (Sn) |
e3 |
500 MHz |
6000 MHz |
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|
Qorvo |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
27 dBm |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11.3 dB |
-40 Cel |
50 MHz |
4000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
18 dBm |
COMPONENT |
8 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
11 dB |
-55 Cel |
LOW NOISE |
0 MHz |
20000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
12 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
15 mA |
COMPONENT |
1/2.85 |
MODULE,12LEAD,.13 |
50 ohm |
RF/Microwave Amplifiers |
11 dB |
CMOS COMPATIBLE |
0 MHz |
1575 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
15 dBm |
220 mA |
COMPONENT |
6 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
GOLD NICKEL |
e4 |
2000 MHz |
4000 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
3.3 |
LCC10,.08SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
10.5 dB |
Tin (Sn) |
e3 |
50 MHz |
7000 MHz |
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|
Skyworks Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
GAAS |
1 |
20 dBm |
120 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
100 Cel |
16.3 dB |
-55 Cel |
ULTRA LOW NOISE |
2000 MHz |
3000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
5 |
TSOP6,.11,37 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
14 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
HIGH RELIABILITY |
e3 |
0 MHz |
6000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
16 dBm |
250 mA |
COMPONENT |
5 |
TSSOP8,.19 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
17 dB |
-40 Cel |
MATTE TIN |
e3 |
3000 MHz |
4000 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
22 dBm |
COMPONENT |
8 |
LCC24,.2SQ,25 |
50 ohm |
85 Cel |
29.5 dB |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
5500 MHz |
8500 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
125 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
13.7 dB |
Matte Tin (Sn) |
LOW NOISE |
e3 |
40 MHz |
3000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
50 mA |
COMPONENT |
3 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
14.4 dB |
Matte Tin (Sn) |
e3 |
100 MHz |
6000 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
22 |
PLASTIC/EPOXY |
GAAS |
1 |
25 dBm |
440 mA |
COMPONENT |
5 |
LCC22(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.7 dB |
-40 Cel |
700 MHz |
1000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
2 |
28 dBm |
50 mA |
COMPONENT |
4 |
LCC16,.16SQ,25 |
50 ohm |
RF/Microwave Amplifiers |
22.3 dB |
Matte Tin (Sn) |
e3 |
800 MHz |
3000 MHz |
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|
Broadcom |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
21 dBm |
16 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
18 dB |
Tin (Sn) |
e3 |
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|
Broadcom |
NARROW BAND MEDIUM POWER |
PLASTIC/EPOXY |
GAAS |
1 |
28 dBm |
910 mA |
COMPONENT |
5 |
MODULE(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
11.2 dB |
3300 MHz |
3900 MHz |
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|
Broadcom |
NARROW BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
COMPONENT |
3.3 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
32 dB |
-40 Cel |
2300 MHz |
2700 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
3.3 |
LCC10,.08SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
10.5 dB |
Matte Tin (Sn) |
e3 |
50 MHz |
7000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
GAAS |
1 |
13 dBm |
30 mA |
COMPONENT |
5 |
WAFER |
50 ohm |
RF/Microwave Amplifiers |
15 dB |
Tin (Sn) |
LOW NOISE |
e3 |
900 MHz |
11000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
GAAS |
1 |
20 dBm |
88 mA |
COMPONENT |
5 |
WAFER |
50 ohm |
RF/Microwave Amplifiers |
12.5 dB |
Tin (Sn) |
LOW NOISE |
e3 |
1000 MHz |
12000 MHz |
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Fujitsu |
NARROW BAND LOW POWER |
CERAMIC |
GAAS |
5 dBm |
2.3 |
COMPONENT |
10,-5 |
FLNG,.53"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
22 dB |
-40 Cel |
HIGH RELIABILITY |
14000 MHz |
14500 MHz |
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|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
GAAS |
1 |
20 dBm |
7 |
COMPONENT |
10 |
DIE OR CHIP |
50 ohm |
85 Cel |
12 dB |
-55 Cel |
Gold (Au) |
e4 |
48000 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
138 mA |
5 |
LCC16,.16SQ,25 |
RF/Microwave Amplifiers |
Tin (Sn) |
e3 |
||||||||||||||
|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
90 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
20 dB |
Tin (Sn) |
LOW NOISE |
e3 |
50 MHz |
2000 MHz |
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|
Broadcom |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
67 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16.5 dB |
-40 Cel |
Tin (Sn) |
e3 |
450 MHz |
2000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
50 mA |
COMPONENT |
3 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
14.4 dB |
Matte Tin (Sn) |
e3 |
100 MHz |
6000 MHz |
||||||||||
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
13 dBm |
1.2 |
101 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE, HIGH RELIABILITY |
e0 |
100 MHz |
6000 MHz |
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|
Broadcom |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
GAAS |
1 |
13 dBm |
1.7 |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
13.7 dB |
-40 Cel |
Matte Tin (Sn) |
e3 |
500 MHz |
6000 MHz |
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NXP Semiconductors |
NARROW BAND HIGH POWER |
METAL |
GAAS |
5 dBm |
1.5 |
525 mA |
COMPONENT |
26 |
MOT CASE 301AP-01 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
30 dB |
-20 Cel |
2110 MHz |
2170 MHz |
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Motorola |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
GAAS |
22 dBm |
2 |
26 |
MOT CASE 301AB-02 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
27 dB |
-10 Cel |
925 MHz |
960 MHz |
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|
Skyworks Solutions |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
2 |
COMPONENT |
4.7 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
18 dB |
-45 Cel |
6000 MHz |
|||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
5 dBm |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15 dB |
-55 Cel |
Gold (Au) |
e4 |
24000 MHz |
40000 MHz |
||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
GAAS |
1 |
10 dBm |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-55 Cel |
Gold (Au) |
LOW NOISE |
e4 |
18000 MHz |
40000 MHz |
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|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
12 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
22 dB |
-40 Cel |
GOLD NICKEL |
e4 |
24000 MHz |
35000 MHz |
||||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
GAAS |
1 |
10 dBm |
150 mA |
COMPONENT |
5 |
DIE OR CHIP |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
15 dB |
-55 Cel |
GOLD |
e4 |
5000 MHz |
20000 MHz |
|||||||||
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
10 dBm |
150 mA |
COMPONENT |
5 |
LCC16,.12SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
12.5 dB |
-40 Cel |
TIN LEAD |
e0 |
5000 MHz |
18000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
32 |
PLASTIC/EPOXY |
GAAS |
1 |
20 dBm |
COMPONENT |
8 |
LCC32,.2SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
8 dB |
-40 Cel |
MATTE TIN |
e3 |
2000 MHz |
20000 MHz |
|||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
24 |
CERAMIC |
GAAS |
1 |
8 dBm |
95 mA |
COMPONENT |
3 |
LCC24,.16SQ,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
10.2 dB |
-40 Cel |
GOLD OVER NICKEL |
e4 |
18000 MHz |
31000 MHz |
||||||
|
Analog Devices |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
5 dBm |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
85 Cel |
19 dB |
-40 Cel |
27000 MHz |
31500 MHz |
||||||||||
|
Analog Devices |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
GAAS |
1 |
15 dBm |
120 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
6 dB |
-40 Cel |
MATTE TIN |
e3 |
200 MHz |
4000 MHz |
||||||
|
Analog Devices |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
GAAS |
1 |
8 |
LCC24,.2SQ,25 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
Matte Tin (Sn) - annealed |
e3 |
||||||||||||||
Texas Instruments |
WIDE BAND MEDIUM POWER |
GAAS |
1.5 |
COMPONENT |
9 |
DIE OR CHIP |
RF/Microwave Amplifiers |
150 Cel |
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Texas Instruments |
WIDE BAND LOW POWER |
GAAS |
COMPONENT |
12 |
DIE OR CHIP |
RF/Microwave Amplifiers |
14 dB |
GOLD |
e4 |
100 MHz |
3500 MHz |
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Texas Instruments |
WIDE BAND MEDIUM POWER |
GAAS |
28 dBm |
2.2 |
350 mA |
COMPONENT |
8 |
DIE OR CHIP |
RF/Microwave Amplifiers |
70 Cel |
11 dB |
0 Cel |
6000 MHz |
18000 MHz |
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Texas Instruments |
WIDE BAND LOW POWER |
GAAS |
1.3 |
COMPONENT |
3 |
DIE OR CHIP |
RF/Microwave Amplifiers |
150 Cel |
LOW NOISE |
9000 MHz |
10000 MHz |
||||||||||||||||
Texas Instruments |
WIDE BAND LOW POWER |
GAAS |
COMPONENT |
12 |
DIE OR CHIP |
RF/Microwave Amplifiers |
150 Cel |
LOW NOISE |
100 MHz |
3500 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.