Broadcom - ALM-32320-TR1G

HELA-10B by Mini-circuits is a wide band medium power RF amplifier with 9.5 dB gain, operating from 50 MHz to 1000 MHz. It can handle up to 20 dBm CW input power and has a VSWR of 1.22, making it suitable for various RF and microwave applications requiring high performance amplification in a compact form factor.

NXP Semiconductors' MMG3002NT1 is a wide band low power RF amplifier with 19.3 dB gain, handling up to 12 dBm CW input power. Operating from 40 MHz to 3600 MHz, it's ideal for RF and microwave applications requiring high performance in a compact form factor.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 4000 MHz;

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

SKY65404-31 by Skyworks Solutions is a wide band low power RF amplifier with 11 dB gain, operating from 4900 MHz to 5900 MHz. It has a max input power of 10 dBm and operates on a 3V power supply. Ideal for applications requiring surface mount construction in RF & microwave systems.

Analog Devices' HMC506LP4E is a RF amplifier with 50 ohm impedance, operating frequency range of 7800-8700 MHz, and VSWR of 2. It is ideal for narrow band low power applications in temperatures ranging from -40 to 85°C.

Qorvo's CMD264P3 is a wide band low power RF amplifier with 18 dB gain, operating from 6-18 GHz. It can handle up to 20 dBm CW input power and operates b/w -40°C to +85°C. Ideal for RF & microwave applications requiring high performance in a compact component.

ALM-32220-BLKG by Broadcom is a GAAS module with 13.5 dB gain, operating from 1700 to 2700 MHz. With a max input power of 28 dBm, it's ideal for wideband high-power RF applications requiring a 50 ohm impedance and 5V supply voltage.

Qorvo's QPA1010D is a GAN RF amplifier with 30 dBm CW input power, 23.1 dB gain, and 50 ohm impedance. Ideal for wideband high-power applications from 7900 MHz to 11000 MHz, it features a VSWR of 3 and operates on -1.9V to 24V supplies.

RF/Microwave Amplifiers; No. of Terminals: 4; Package Body Material: METAL; Package Equivalence Code: MODULE,4LEAD,.45; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: 0 Cel;

HMC998APM5E by Analog Devices is a wide band medium power RF amplifier with 13 dB gain and 27 dBm max input power. It operates from 0 to 22000 MHz, suitable for various RF applications. With a VSWR of 7, it offers reliable performance in temperatures ranging from -40 to 85°C.

Analog Devices' HMC7950LS6 is a wide band low power RF amplifier with 13 dB gain, operating from 2-28 GHz. It can handle up to 20 dBm CW input power and operates b/w -40°C to +85°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact form factor.

WIDE BAND LOW POWER; Maximum Operating Frequency: 6000 MHz; Maximum Input Power (CW): 20 dBm; Gain: 18 dB; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; Characteristic Impedance: 50 ohm;

WIDE BAND MEDIUM POWER; Maximum Operating Temperature: 85 Cel; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 0 MHz; Gain: 10.1 dB; Maximum Input Power (CW): 24 dBm;

SPF5043ZSQ by Qorvo is a GAAS RF amplifier with 11.4 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 25 dBm and operates at temperatures ranging from -40°C to 85°C. Ideal for wideband low-power applications requiring surface mount technology.

WIDE BAND HIGH POWER;

Analog Devices' HMC429LP4E is a RF & Microwave Amplifier with VSWR of 2, operating from -40°C to 85°C. It's a narrow band low power device with 50 ohm impedance, covering frequencies from 4450 MHz to 5000 MHz. Ideal for applications requiring precise amplification in RF and microwave systems.

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 13 dBm; Minimum Operating Frequency: 10 MHz; Minimum Operating Temperature: -54 Cel; Maximum Operating Temperature: 85 Cel;

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Screening Level: AEC-Q100;