Fujitsu - FMM5010VF

HMC565LC5TR by Analog Devices is a wide band low power RF amplifier with 16 dB gain, operating from 6-20 GHz. It has a max input power of 10 dBm and operates on a 3V supply, drawing 75 mA. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.

Mini-circuits' ZX60-2411BM-S+ is a COAXIAL RF amplifier with 9 dB Gain, operating from 1900 MHz to 2400 MHz. It has a Max Input Power of 16 dBm and VSWR of 1.65, making it ideal for NARROW BAND LOW POWER applications in RF & Microwave systems.

WIDE BAND HIGH POWER; Terminal Finish: GOLD OVER NICKEL; Gain: 19 dB; Construction: COMPONENT; Minimum Operating Frequency: 30 MHz; Maximum Input Power (CW): 33 dBm;

MAX2640EUT-T by Maxim Integrated is a wide band low power RF amplifier with gain of 12.8 dB, operating from 300 MHz to 1500 MHz. It has a max input power of 5 dBm and operates on 3/5 V supplies. Ideal for RF & microwave applications requiring surface mount construction and characteristic impedance of 50 ohm.

Qorvo's CMD192C5 is a wide band low power RF amplifier with 17 dB gain and 23 dBm CW input power. Operating from -40 to 85°C, it covers 0-20000 MHz range. Ideal for RF & microwave applications requiring high performance in compact designs.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

Analog Devices' HMC963LC4TR is a wide band low power RF amplifier with 16.5 dB gain, operating from 6-26.5 GHz. It features a max input power of 0 dBm, 3.5V supply voltage, and ceramic package ideal for surface mount applications in RF & microwave systems.

GALI-39+ by Mini-circuits is a wide band low power RF amplifier with 17.7 dB gain and 50 ohm impedance. It operates from 0 to 7000 MHz, handles up to 13 dBm input power, and has a VSWR of 2.3. Ideal for RF & microwave applications requiring compact surface mount components.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Power Supplies (V): 28;

Analog Devices' HMC465LP5ETR is a wide band low power RF amplifier with 9.5 dB gain and 50 ohm impedance. It operates from 0 to 20,000 MHz, handles up to 23 dBm CW input power, and has a max temperature range of -40 to +85°C. Ideal for RF and microwave applications requiring high performance in a compact plastic/epoxy package.

MAX2839ETN+TD by Maxim Integrated is a narrow band low power RF amplifier with 15 dBm CW input power. Operating from -40 to 85°C, it covers 2300-2700 MHz range. Ideal for RF applications requiring high performance in a compact component package.

ADL5523ACPZ-R7 by Analog Devices is a wideband high-power RF amplifier with 17.5 dB gain, operating from 400 MHz to 4 GHz. It features GaAs technology, matte tin terminal finish, and a plastic/epoxy package suitable for surface mount applications in RF and microwave systems.

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

Analog Devices' HMC636ST89TR is a GaAs RF amplifier with 5V power supply, operating from -40 to 85°C. It features wideband low power design in a surface-mount package, ideal for RF and microwave applications requiring high performance in compact setups.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Construction: COMPONENT; Gain: 22 dB;

HMC1040LP3CE by Analog Devices is a wide band low power RF amplifier with 17 dB gain and 50 ohm impedance. It operates from 24 to 43.5 GHz, with a max input power of 5 dBm and a supply current of 85 mA. This PHEMT technology component is ideal for RF and microwave applications requiring high performance in a compact package.

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 20; Construction: COMPONENT; Gain: 20.5 dB; Maximum Input Power (CW): 13 dBm; Additional Features: LOW NOISE;

MAX2659ELT/V+T by Analog Devices is a RF amplifier with 1.8/3.3V power supplies, BICMOS technology, and 5.6mA max supply current. It operates b/w -40 to 85°C, has AEC-Q100 screening level, and comes in a plastic/epoxy package. Ideal for RF & microwave applications requiring surface mounting feature.

CA70-2 by M/a-com Technology Solutions is a wide band low power RF amplifier with 7 dB gain. It operates b/w 10-250 MHz, handling up to 13 dBm CW input power. With a VSWR of 2.1, it's ideal for applications requiring coaxial construction in temperatures ranging from 0-50°C.