Analog Devices - HMC-ALH445

  1. Home
  2. Analog Devices - HMC-ALH445
HMC-ALH445 by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number HMC-ALH445
Description WIDE BAND LOW POWER; Technology: GAAS; Power Supplies (V): 5; No. of Functions: 1; Construction: COMPONENT; Terminal Finish: Gold (Au);
Datasheet HMC-ALH445 Datasheet
In Stock107
NAME DESCRIPTION
Construction: COMPONENT
Minimum Operating Frequency: 18000 MHz
Sub-Category: RF/Microwave Amplifiers
Terminal Finish: Gold (Au)
JESD-609 Code: e4
Minimum Operating Temperature: -55 Cel
No. of Functions: 1
Maximum Input Power (CW): 10 dBm
Package Equivalence Code: DIE OR CHIP
Technology: GAAS
Characteristic Impedance: 50 ohm
Additional Features: LOW NOISE
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 40000 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Gain: 8 dB
Power Supplies (V): 5
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
107 $76.000 $8,132.000

Popular Products

Category Top Products

HMC561LP3E by Analog Devices

HMC561LP3E

Analog Devices

Analog Devices' HMC561LP3E is a wide band low power RF amplifier with 16 terminals, operating from 8-21 GHz. It offers a max input power of 10 dBm, suitable for applications requiring RF amplification in the frequency range. The component is constructed using GaAs technology and can operate b/w -40 to 85°C, making it ideal for various RF and microwave applications.
TGA2238-CP by Qorvo

TGA2238-CP

Qorvo

TGA2238-CP by Qorvo is a GAN technology RF amplifier with 28 dB gain, operating from 8-11 GHz. It has a max input power of 30 dBm and VSWR of 3, suitable for wideband high-power applications. This module operates b/w -40 to 85°C, drawing a max current of 650 mA at -2.6 to 28V supplies.
MSA-1105-TR1G by Agilent Technologies

MSA-1105-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 1300 MHz; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 1.7; Gain: 10 dB;
MAX2691EWS+T by Analog Devices

MAX2691EWS+T

Analog Devices

MAX2691EWS+T by Analog Devices is a BICMOS RF amplifier with 13.1 dB gain, operating at 1.8/3.3V. It is a wide band low power device suitable for surface mount applications in RF & Microwave systems, offering a characteristic impedance of 50 ohm and temperature range from -40 to 85°C.
HMC372LP3ETR by Hittite Microwave

HMC372LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
BGU6005/N2X by NXP Semiconductors

BGU6005/N2X

NXP Semiconductors

BGU6005/N2X by NXP Semiconductors is a narrow band low power RF amplifier with 17.5 dB gain and 50 ohm impedance. It operates b/w 1559-1610 MHz, handles up to 10 dBm input power, and has a max VSWR of 1.43. This component is ideal for applications requiring surface mounting in RF & microwave systems.
CMPA901A035F1 by Wolfspeed

CMPA901A035F1

Wolfspeed

WIDE BAND HIGH POWER;
SGL0363ZSR by Rf Micro Devices

SGL0363ZSR

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;
RDA1005LTR7 by Qorvo

RDA1005LTR7

Qorvo

Qorvo's RDA1005LTR7 is a wide band low power RF amplifier with 15.5 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for applications requiring surface mount components in RF & microwave systems.
TQP3M9028 by Qorvo

TQP3M9028

Qorvo

The Qorvo TQP3M9028 is a wide band medium power RF amplifier with 13 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, with a max input power of 23 dBm. Suitable for surface mount applications in RF and microwave systems, it has a plastic/epoxy package body and requires a 5V power supply.
CC2590RGVR by Texas Instruments

CC2590RGVR

Texas Instruments

CC2590RGVR by Texas Instruments is a 16-terminal RF amplifier with a gain of 14.1 dB, operating b/w 2400-2483.5 MHz. It has a max input power of 10 dBm and operates on a 3V power supply. Ideal for narrowband low-power applications requiring surface mounting in temperatures ranging from -40 to 85°C.
GRF2013 by Guerrilla Rf

GRF2013

Guerrilla Rf

GRF2013 by Guerrilla Rf is a wide band medium power RF amplifier with 17.5 dB gain, operating from 50-8000 MHz. It can handle up to 22 dBm CW input power and has a max VSWR of 2. Ideal for applications requiring high-frequency amplification in temperatures ranging from -40 to 105°C.
MSA-0686-BLK by Hewlett Packard

MSA-0686-BLK

Hewlett Packard

WIDE BAND LOW POWER; Additional Features: HIGH RELIABILITY; Gain: 16.5 dB; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 800 MHz;
XP1035-QH-0G00 by Mimix Broadband

XP1035-QH-0G00

Mimix Broadband

WIDE BAND HIGH POWER; Minimum Operating Temperature: -55 Cel; Construction: COMPONENT; Minimum Operating Frequency: 5900 MHz; JESD-609 Code: e3; Maximum Operating Temperature: 85 Cel;
LEE-29+ by Mini-circuits

LEE-29+

Mini-circuits

Mini-circuits LEE-29+ is a wideband low power RF amplifier with 13.3 dB gain, operating from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 1.6, suitable for various RF & microwave applications requiring amplification in the temperature range of -40 to 85°C.
MAAM28000-A1G by M/a-com Technology Solutions

MAAM28000-A1G

M/a-com Technology Solutions

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: CERAMIC; Technology: GAAS; Construction: COMPONENT;
ADL5523ACPZ-R7 by Analog Devices

ADL5523ACPZ-R7

Analog Devices

ADL5523ACPZ-R7 by Analog Devices is a wideband high-power RF amplifier with 17.5 dB gain, operating from 400 MHz to 4 GHz. It features GaAs technology, matte tin terminal finish, and a plastic/epoxy package suitable for surface mount applications in RF and microwave systems.
NBB-400-T1 by Rf Micro Devices

NBB-400-T1

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Maximum Operating Frequency: 8000 MHz;
HMC608LC4 by Hittite Microwave

HMC608LC4

Hittite Microwave

WIDE BAND MEDIUM POWER; Gain: 27 dB; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 9500 MHz;
935373852528 by NXP Semiconductors

935373852528

NXP Semiconductors

NXP Semiconductors' 935373852528 RF Amplifier operates in the 3200-4000 MHz range with a gain of 26.5 dB and can handle up to 28 dBm CW input power. This LDMOS component, with a VSWR of 10, is designed for narrowband high-power applications requiring a characteristic impedance of 50 ohms.