Analog Devices - ADPA7007AEHZ-R7

  1. Home
  2. Analog Devices - ADPA7007AEHZ-R7
ADPA7007AEHZ-R7 by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number ADPA7007AEHZ-R7
Description WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 18; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Technology: GAAS; Construction: COMPONENT;
Datasheet ADPA7007AEHZ-R7 Datasheet
In Stock339
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Construction: COMPONENT
Minimum Operating Frequency: 20000 MHz
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Maximum Voltage Standing Wave Ratio: 1.29
No. of Terminals: 18
Maximum Input Power (CW): 27 dBm
Technology: GAAS
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 44000 MHz
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Gain: 18.5 dB
Power Supplies (V): 5
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
339 - -

Popular Products

Category Top Products

GALI-2+ by Mini-circuits

GALI-2+

Mini-circuits

GALI-2+ by Mini-circuits is a RF amplifier with 12 dB gain, operating from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 2.6, suitable for wideband low-power applications in RF and microwave systems. The component is constructed with plastic/epoxy package body material and operates b/w -45°C to 85°C temperature range.
MW7IC2220NR1 by Freescale Semiconductor

MW7IC2220NR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Maximum Operating Temperature: 150 Cel; Maximum Operating Frequency: 2200 MHz; Characteristic Impedance: 50 ohm;
HMC794LP3ETR by Analog Devices

HMC794LP3ETR

Analog Devices

WIDE BAND LOW POWER; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
MGA-62563-BLK by Agilent Technologies

MGA-62563-BLK

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TSSOP6,.08;
CA70-2 by M/a-com Technology Solutions

CA70-2

M/a-com Technology Solutions

CA70-2 by M/a-com Technology Solutions is a wide band low power RF amplifier with 7 dB gain. It operates b/w 10-250 MHz, handling up to 13 dBm CW input power. With a VSWR of 2.1, it's ideal for applications requiring coaxial construction in temperatures ranging from 0-50°C.
HMC311LP3E by Analog Devices

HMC311LP3E

Analog Devices

HMC311LP3E by Analog Devices is a GAAS RF amplifier with 12dB gain, operating from 0-6000MHz. It has a max input power of 10dBm and operates on a 5V power supply. Ideal for wideband low-power applications in RF & microwave systems due to its surface mount package and 50 ohm characteristic impedance.
TGA2237-SM by Triquint Semiconductor

TGA2237-SM

Triquint Semiconductor

WIDE BAND HIGH POWER; Terminal Finish: GOLD OVER NICKEL; Gain: 19 dB; Construction: COMPONENT; Minimum Operating Frequency: 30 MHz; Maximum Input Power (CW): 33 dBm;
ADA-4643-BLKG by Agilent Technologies

ADA-4643-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1; Power Supplies (V): 3.5; Terminal Finish: Tin (Sn);
MMZ09312BT1 by Freescale Semiconductor

MMZ09312BT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;
BGU8019X by NXP Semiconductors

BGU8019X

NXP Semiconductors

The NXP Semiconductors BGU8019X is a RF & Microwave Amplifier with 16 dB Gain, operating from 1559 MHz to 1610 MHz. It has a Max Input Power of 10 dBm and operates in temperatures ranging from -40°C to 85°C. Ideal for narrow band low power applications with a characteristic impedance of 50 ohm.
RF5110GSR by Qorvo

RF5110GSR

Qorvo

Qorvo's RF5110GSR is a wideband medium power amplifier with 33dB gain, operating from 150MHz to 960MHz. It has a max input power of 13dBm and VSWR of 10, suitable for RF & microwave applications requiring high performance in a compact form factor. The hybrid construction and surface mount feature make it ideal for various communication systems.
NBB-400-D by Rf Micro Devices

NBB-400-D

Rf Micro Devices

WIDE BAND LOW POWER; Minimum Operating Temperature: -45 Cel; Minimum Operating Frequency: 0 MHz; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 1.9;
HMC963LC4TR by Analog Devices

HMC963LC4TR

Analog Devices

Analog Devices' HMC963LC4TR is a wide band low power RF amplifier with 16.5 dB gain, operating from 6-26.5 GHz. It features a max input power of 0 dBm, 3.5V supply voltage, and ceramic package ideal for surface mount applications in RF & microwave systems.
GVA-63+ by Mini-circuits

GVA-63+

Mini-circuits

GVA-63+ by Mini-circuits is a wide band low power RF amplifier with 19 dB gain, operating from 10 MHz to 6 GHz. It has a max input power of 13 dBm and operates on a 5V supply with a max current draw of 78 mA. Ideal for applications requiring amplification in the RF and microwave range.
HMC634LC4 by Analog Devices

HMC634LC4

Analog Devices

HMC634LC4 by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating frequency range of 5-20 GHz. It features a max input power of 10 dBm, ceramic package body material, and gold over nickel terminal finish. Ideal for applications requiring high-frequency amplification in RF and microwave systems.
GALI-6F+F55 by Mini-circuits

GALI-6F+F55

Mini-circuits

GALI-6F+F55 by Mini-circuits is a RF & Microwave Amplifier with 4.8V power supply, operating from -45°C to 85°C. It features a plastic/epoxy package, bipolar technology, and surface mounting. Ideal for applications requiring high-frequency signal amplification in various electronic systems.
TRF37D73IDSGT by Texas Instruments

TRF37D73IDSGT

Texas Instruments

TRF37D73IDSGT by Texas Instruments is a wide band low power RF amplifier with 20dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply with a current draw of 65mA. Ideal for applications requiring high frequency amplification in compact designs.
HMC451LP3ETR by Analog Devices

HMC451LP3ETR

Analog Devices

HMC451LP3ETR by Analog Devices is a GAAS RF amplifier with 12.5 dB gain, operating from 5V supply at frequencies ranging from 5-18 GHz. With a max input power of 10 dBm, it's ideal for wideband low-power applications in RF and microwave systems requiring surface mount components.
HMC516LC5 by Analog Devices

HMC516LC5

Analog Devices

HMC516LC5 by Analog Devices is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 9-18 GHz, with a max input power of 5 dBm. Ideal for RF & microwave applications requiring high performance in a compact ceramic package.
HMC451LC3 by Hittite Microwave

HMC451LC3

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 10 dBm;