Formosa Microsemi - 2N7002

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2N7002 by Formosa Microsemi

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Manufacturer Formosa Microsemi
Manufacturer's Part Number 2N7002
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .115 A;
Datasheet 2N7002 Datasheet
In Stock1,255,084
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .225 W
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .115 A
Maximum Drain Current (Abs) (ID): .115 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): 260
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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