3 RF & Microwave Amplifiers 191

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
TQP3M9028	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	23 dBm		100 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	13 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	50 MHz	4000 MHz
TQP3M9009	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	23 dBm		150 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	20 dB	-40 Cel	NICKEL PALLADIUM GOLD	LOW NOISE	e4	50 MHz	4000 MHz
SBB5089ZSR	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	24 dBm		92 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14.5 dB	-40 Cel	Matte Tin (Sn)		e3	50 MHz	6000 MHz
SBB5089Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	24 dBm		92 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14.5 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	50 MHz	6000 MHz
SBB-5089Z	Sirenza Microdevices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	12 dBm		92 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14.5 dB	-40 Cel	Matte Tin (Sn)		e3	50 MHz	6000 MHz
TQP3M9008	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	E-PHEMT	1	23 dBm	1.33	100 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	105 Cel	19 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	50 MHz	4000 MHz
TQP7M9103	Qorvo	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	30 dBm	10	260 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	16.6 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	400 MHz	4000 MHz
MMG20241HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	23 dBm		104 mA	COMPONENT	5	TO-243	50 ohm			18.4 dB		MATTE TIN		e3	450 MHz	3800 MHz
MMG15241HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	23 dBm		105 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		14 dB		MATTE TIN	LOW NOISE	e3	500 MHz	2800 MHz
SBB-4089Z	Sirenza Microdevices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	12 dBm		92 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14 dB	-40 Cel	Matte Tin (Sn)		e3	50 MHz	6000 MHz
SBB4089Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	24 dBm		92 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	13.5 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	50 MHz	6000 MHz
MWA330	Motorola	WIDE BAND LOW POWER		3	METAL	HYBRID		20 dBm	3	100 mA	MODULE		CAN3/4,.2	50 ohm	RF/Microwave Amplifiers	80 Cel		-25 Cel	Tin/Lead (Sn/Pb)		e0	.1 MHz	1000 MHz
BGA3018,115	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY		1			135 mA		8	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
SBF-4089Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	19 dBm		98 mA	COMPONENT	4.9	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	13.2 dB	-40 Cel	MATTE TIN		e3	0 MHz	500 MHz
ADL5611ARKZ-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	20 dBm		124 mA	COMPONENT	5	TO-243	50 ohm		105 Cel	14.3 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	30 MHz	6000 MHz
MMG3014NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	15 dBm		160 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		18.5 dB		MATTE TIN		e3	40 MHz	4000 MHz
SGA-6489Z	Sirenza Microdevices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	18 dBm	1.8	83 mA	COMPONENT	5.1	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	18.4 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	3500 MHz
SGA6489Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		83 mA	COMPONENT	5.1	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	18.4 dB	-40 Cel	Matte Tin (Sn)		e3	0 MHz	3500 MHz
SBF4089ZSR	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	15 dBm		98 mA	COMPONENT	4.9	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	13.2 dB	-40 Cel				0 MHz	500 MHz
GALI-39	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	2.3		COMPONENT	3.5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	17.7 dB	-45 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	0 MHz	7000 MHz
GALI-39+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	13 dBm	2.3		COMPONENT	3.5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	17.7 dB	-45 Cel	TIN SILVER OVER NICKEL	HIGH RELIABILITY	e2	0 MHz	7000 MHz
MGA-30889-TR1G	Broadcom	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	20 dBm		77 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		14.6 dB		Tin (Sn)		e3	40 MHz	2600 MHz
MMG3H21NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	12 dBm		110 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		18.3 dB		MATTE TIN		e3	0 MHz	6000 MHz
HMC462-SX	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3		PHEMT	1	18 dBm	1.25	84 mA	COMPONENT	5	DIE OR CHIP	50 ohm		85 Cel	12.5 dB	-55 Cel				2000 MHz	20000 MHz
HMC636ST89	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	16 dBm			COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	5 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	200 MHz	4000 MHz
GVA-63+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	13 dBm		78 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	19 dB	-40 Cel	TIN SILVER OVER NICKEL	HIGH RELIABILITY	e2	10 MHz	6000 MHz
MMG3012NT1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		82 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		17.5 dB		Matte Tin (Sn)		e3	0 MHz	6000 MHz
ADL5545ARKZ-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		70 mA	COMPONENT	5	TO-243	50 ohm		150 Cel	24.8 dB	-40 Cel	MATTE TIN		e3	30 MHz	6000 MHz
SBB2089Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	24 dBm		98 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	18.5 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	50 MHz	850 MHz
SBB-2089Z	Sirenza Microdevices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	12 dBm		98 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	18.5 dB	-40 Cel	Matte Tin (Sn)		e3	50 MHz	850 MHz
HMC636ST89ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	16 dBm			COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	5 dB	-40 Cel		LOW NOISE		200 MHz	4000 MHz
SBB3089Z	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	20 dBm		46 mA	COMPONENT	4.2	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14.9 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	50 MHz	6000 MHz
SBB3089ZSR	Qorvo	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	20 dBm		46 mA	COMPONENT	4.2	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14.9 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	50 MHz	6000 MHz
HMC453ST89ETR	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1					5	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel
HMC636ST89TR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1					5	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN LEAD		e0
MGA-30789-BLKG	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	24 dBm		117 mA	COMPONENT	5	TO-243		RF/Microwave Amplifiers		8 dB		Tin (Sn)		e3	2000 MHz	6000 MHz
MGA-31189-BLKG	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	25 dBm		128 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		19 dB		Tin (Sn)	LOW NOISE	e3	50 MHz	2000 MHz
PGA-1021+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	28 dBm		90 mA	COMPONENT	3.3	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	13.6 dB	-40 Cel	TIN SILVER OVER NICKEL	LOW NOISE	e2	50 MHz	6000 MHz
HMC475ST89E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	17 dBm		135 mA	COMPONENT	8	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel	MATTE TIN		e3	0 MHz	4500 MHz
HMC475ST89ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	17 dBm		135 mA	COMPONENT	8	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	9 dB	-40 Cel	MATTE TIN		e3	0 MHz	4500 MHz
HMC478ST89E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	5 dBm			COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	MATTE TIN		e3	0 MHz	4000 MHz
HMC478ST89ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		82 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	MATTE TIN		e3	0 MHz	4000 MHz
ADL5544ARKZ-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR	1	18 dBm		69 mA	COMPONENT	5	TO-243	50 ohm		105 Cel	18.5 dB	-40 Cel	MATTE TIN		e3	30 MHz	6000 MHz
MGA-31189-TR1G	Broadcom	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	GAAS	1	25 dBm		128 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		19 dB		Tin (Sn)	LOW NOISE	e3	50 MHz	2000 MHz
PGA-102+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	28 dBm		120 mA	COMPONENT	3.3	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	14.4 dB	-40 Cel	TIN SILVER OVER NICKEL	LOW NOISE, HIGH RELIABILITY	e2	50 MHz	6000 MHz
GALI-6+	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	20 dBm	2	85 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	TIN SILVER OVER NICKEL	HIGH RELIABILITY	e2	0 MHz	4000 MHz
GALI-6	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	20 dBm	2		COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-45 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	0 MHz	4000 MHz
GALI-6F	Mini-circuits	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1	20 dBm	2.2		COMPONENT	4.8	TO-243	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-45 Cel	Tin/Lead (Sn/Pb)	HIGH RELIABILITY	e0	0 MHz	4000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.